公开(公告)号：US09716109B2

公开(公告)日：2017-07-25

申请号：US15063706

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L25/00 ,  H01L27/12 ,  H01L29/786 ,  H01L33/02 ,  H04R1/02 ,  H01L29/36 ,  H01L27/15 ,  H01L27/32 ,  H01L29/24 ,  H04M1/02 ,  H01L21/8234

CPC classification number: H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US09711582B2

公开(公告)日：2017-07-18

申请号：US15145863

申请日：2016-05-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

IPC: H01L29/49 ,  H01L27/32 ,  H01L27/146 ,  H04N3/14 ,  H04N5/225 ,  H01L27/15 ,  H01L29/786 ,  H01L51/00 ,  G09G3/3258 ,  G09G3/3266

CPC classification number: H01L27/3269 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2320/0646 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/15 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N3/155 ,  H04N5/2251 ,  H04N5/374

Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

公开(公告)号：US09666678B2

公开(公告)日：2017-05-30

申请号：US13799246

申请日：2013-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/26 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US09640127B2

公开(公告)日：2017-05-02

申请号：US15175189

申请日：2016-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Atsushi Umezaki

IPC: H03K3/00 ,  G09G3/36 ,  H03K19/00 ,  H03K19/0185 ,  H03K17/687 ,  H01L27/12 ,  H01L27/02 ,  H01L29/786

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

公开(公告)号：US09601635B2

公开(公告)日：2017-03-21

申请号：US14924857

申请日：2015-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/04 ,  H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US09589961B2

公开(公告)日：2017-03-07

申请号：US14678028

申请日：2015-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: G11C11/24 ,  H01L27/105 ,  G11C11/404 ,  G11C11/405 ,  G11C11/56 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12 ,  H01L27/108 ,  H01L29/26 ,  G11C16/04 ,  G11C16/10 ,  H01L29/786 ,  H01L21/02 ,  H01L27/115

CPC classification number: H01L27/1052 ,  G11C5/06 ,  G11C7/12 ,  G11C11/404 ,  G11C11/405 ,  G11C11/565 ,  G11C16/0408 ,  G11C16/10 ,  G11C2211/4016 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/263 ,  H01L29/7869

Abstract: Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor.

Abstract translation: 公开了用作多值存储器件的半导体器件，包括：串联连接的存储器单元; 选择存储单元并驱动第二信号线和字线的驱动器电路; 选择写入电位的驱动器电路并将其输出到第一信号线; 读取电路，比较位线的电位和参考电位; 以及产生写入电位和参考电位的电位产生电路。 一个存储单元包括：连接到位线的第一晶体管和源极线; 连接到第一和第二信号线的第二晶体管; 以及连接到字线，位线和源极线的第三晶体管。 第二晶体管包括氧化物半导体层。 第一晶体管的栅电极连接到第二晶体管的源极和漏极之一。

公开(公告)号：US09577016B2

公开(公告)日：2017-02-21

申请号：US14730334

申请日：2015-06-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC: H01L29/786 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

Abstract translation: 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。

公开(公告)号：US09576982B2

公开(公告)日：2017-02-21

申请号：US13667271

申请日：2012-11-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: G02F1/136 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1259 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288

Abstract: A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer.

Abstract translation: 制造具有五个光刻步骤的显示装置：形成栅电极的步骤，形成用于减少由蚀刻步骤等引起的损伤的保护层的步骤，形成源电极和漏电极的步骤 形成接触孔的步骤和形成像素电极的步骤。 显示装置包括在形成接触孔并分离半导体层的步骤中形成的槽部。

公开(公告)号：US09543835B2

公开(公告)日：2017-01-10

申请号：US14262965

申请日：2014-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Jun Koyama ,  Masato Ishii

IPC: H02M1/36 ,  H02M3/156 ,  H01L27/12 ,  H02M3/155

CPC classification number: H02M3/156 ,  H01L27/1225 ,  H01L27/1251 ,  H02M3/155 ,  Y02B70/1483

Abstract: Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low.

Abstract translation: 提供了具有改善的功率转换效率的DC-DC转换器。 结合在DC-DC转换器中并用作用于控制输出功率的开关元件的晶体管在其沟道形成区域中包括与硅相比具有宽带隙和显着小的截止电流的半导体材料。 该晶体管还包括除普通栅电极之外的背栅电极和用于根据来自DC-DC转换器的输出功率来控制施加到背栅极的电位的背栅控制电路。 通过背栅极控制电路控制施加到背栅电极的电位，能够在输出功率较高时使阈值电压降低导通电阻，并且在输出功率较低时增加截止电流。

公开(公告)号：US09536468B2

公开(公告)日：2017-01-03

申请号：US14886994

申请日：2015-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Hajime Kimura

IPC: G06F3/038 ,  G09G5/00 ,  G09G3/30 ,  G09G3/32 ,  H01L27/12 ,  H01L51/52 ,  H01L27/32

CPC classification number: G09G3/3258 ,  G09G3/30 ,  G09G3/3225 ,  G09G3/3241 ,  G09G2300/0426 ,  G09G2310/0291 ,  G09G2320/0214 ,  G09G2320/0223 ,  G09G2330/021 ,  H01L27/124 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/5221 ,  H01L2251/5353

Abstract: There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix.

Abstract translation: 提供了一种有源矩阵EL显示装置，其可以显示清晰的多灰度彩色显示器，以减少由于电源线的布线电阻引起的电位降低引起的电位偏移，以便减小不平坦度 在显示区域。 布置有电源供给线的多个引出口。 此外，在外部输入端子和像素部分电源线之间的布线电阻中，通过反馈放大器向电源线供给电位来进行电位补偿。 此外，除了上述结构之外，电源供给线可以以矩阵形式布置。