摘要:
The invention relates to a chip arrangement (18) comprising a terminal substrate (12) and a plurality of semiconductor substrates (1) which are arranged on the terminal substrate, in particular chips, wherein terminal faces (5) arranged on a contact surface of the chips (1) are connected to terminal faces on a contact surface (14) of the terminal substrate (12), wherein the chips (1) extend parallel with a lateral edge and transversally with their contact surface to the contact surface of the terminal substrate (12), wherein vias (13) are arranged in the terminal substrate, which connect external contacts (15) arranged on an external contact side to terminal faces formed as internal contacts (14) on the contact surface of the terminal substrate, wherein terminal faces of the chips, which are arranged adjacent to the lateral edge, are connected to the internal contacts of the terminal substrate by way of a re-melted solder material deposit (16). Furthermore, the invention relates to a method for producing a chip arrangement (18).
摘要:
A method for electrically contacting terminal faces of two substrates, such as a chip and a carrier substrate, includes two successive phases. In a first phase, the chip is positioned with its terminal faces against terminal faces of the substrate and laser energy is applied to the chip at the rear. In a second phase, a flux medium is applied and laser energy is applied to the rear of the chip to cause reflow. The device for performing the second phase of the method comprises a carrier table and a housing, which form a housing interior with a top side of the carrier table which receives the component arrangement, and a laser light source, which is oriented so that the laser radiation impinges on the rear side of the first substrate.
摘要:
A bonding device includes: a plurality of laser oscillators that oscillate laser beams; a plurality of guide beam parts that guide the laser beams oscillated from the laser oscillators; a bonding tool that is irradiated and heated by the laser beams guided from the guide beam parts so that an electronic part held on the bonding tool is heated by the laser beams and is bonded to a base plate. The bonding tool is segmented into a plurality of heat regions, each of the heat regions is irradiated by the laser beams that are guided through the guide beam parts so that some of the heat regions are heated at a temperature different from other heat regions, and an insulation part is disposed at a middle section between two of the heat regions, the insulation part suppressing a heat transfer between the heat regions.
摘要:
Laser assisted bonding for semiconductor die interconnections is disclosed and may, for example, include forming flux on a circuit pattern on a circuit board, placing a semiconductor die on the circuit board where a bump on the semiconductor die contacts the flux, and reflowing the bump by directing a laser beam toward the semiconductor die. The laser beam may volatize the flux and make an electrical connection between the bump and the circuit pattern. A jig plate may be placed on the semiconductor die when the laser beam is directed toward the semiconductor die. Warpage may be reduced during heating or cooling of the semiconductor die by applying pressure to the jig plate. Jig bars may extend outward from the jig plate and may be in contact with the circuit board during the application of pressure to the jig plate. The jig plate may comprise one or more of: silicon, silicon carbide, and glass.
摘要:
Methods for assembling metal bump dies. In an embodiment, a method includes providing an integrated circuit die having a plurality of conductive terminals; depositing solder to form solder depositions on the conductive terminals; providing a substrate having a die attach region on a surface for receiving the integrated circuit die, the substrate having a plurality of conductive traces formed in the die attach region; aligning the integrated circuit die and the substrate and bringing the plurality of conductive terminals and the conductive traces into contact, so that the solder depositions physically contact the conductive traces; and selectively heating the integrated circuit die and the conductive terminals to a temperature sufficient to cause the solder depositions to melt and reflow, forming solder connections between the conductive traces on the substrate and the conductive terminals on the integrated circuit die. Various energy sources are disclosed for the selective heating.
摘要:
A bonding system 1 includes a plurality of laser resonators 7 and a plurality of optical fibers f1 to f36 each having a laser beam inlet connected to one of the plurality of laser resonators. The optical fibers are bundled, and laser beam outlets of the optical fibers are disposed so as to optically face a heating region S of an electronic component 3, and the heating region is irradiated with spots of laser beams emitted from the laser beam outlets. The heating region S is divided into at least corner sub-regions S1 at the corners of the electronic component and an inner sub-region S2 inside the electronic component, and the laser power of the laser resonators whose laser beam outlets face the corner sub-regions is set higher than the laser power of the laser resonators whose laser beam outlets face the inner sub-region.For example, in the case where the electronic component has a rectangular shape, the four corner sub-regions S1, which tend to dissipate more heat, can be heated with higher laser power, so that the electronic component can be uniformly heated.
摘要:
Methods for assembling metal bump dies. In an embodiment, a method includes providing an integrated circuit die having a plurality of conductive terminals; depositing solder to form solder depositions on the conductive terminals; providing a substrate having a die attach region on a surface for receiving the integrated circuit die, the substrate having a plurality of conductive traces formed in the die attach region; aligning the integrated circuit die and the substrate and bringing the plurality of conductive terminals and the conductive traces into contact, so that the solder depositions physically contact the conductive traces; and selectively heating the integrated circuit die and the conductive terminals to a temperature sufficient to cause the solder depositions to melt and reflow, forming solder connections between the conductive traces on the substrate and the conductive terminals on the integrated circuit die. Various energy sources are disclosed for the selective heating.
摘要:
The present invention relates to a method for electrically contacting terminal faces of two substrates (6, 7), in particular of a chip (6) and of a carrier substrate (7). Furthermore, the invention relates to a device for performing a second phase of the method according to the invention. The method according to the invention takes place in two successive phases, wherein, in a first phase, the chip (6) is positioned with its terminal faces against terminal faces of the substrate (7) and laser energy (5) is applied to the chip (6) at the rear and, in a subsequent second phase, in a housing (3), a flux medium is applied and at the same time a reflow is performed by means of laser energy (5) being applied to the chip (6) at the rear, and a process of rinsing the housing interior is subsequently performed. The device according to the invention for performing a second phase of the method comprises a carrier table (1) and a housing (3), which together with a top side of the carrier table (1) forms a housing interior, in which the component arrangement is positioned, and also a laser light source (5), which is oriented in such a way that the laser radiation impinges on the first substrate (6) on the rear side.
摘要:
A method and device for transferring a chip (18) situated on a transfer substrate (26) to a contact substrate (50), and for contacting the chip with the contact substrate, in which the chip, the back side (19) of which is attached adhesively to a support surface of the transfer substrate facing the contact substrate, is charged with laser energy from behind through the transfer substrate, and the chip contacts (59, 60) thereof that are arranged opposite a contact surface (58) of the contact substrate are brought into contact with substrate contacts (56, 57) arranged on the contact surface by means of a pressing device (45, 46) from behind through the transfer substrate, and a thermal bond is created between the chip contacts and the substrate contacts.
摘要:
In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.