公开(公告)号：US5252852A

公开(公告)日：1993-10-12

申请号：US989877

申请日：1992-12-11

申请人： Masao Makiuchi ,  Tatsuyuki Sanada ,  Osamu Wada

发明人： Masao Makiuchi ,  Tatsuyuki Sanada ,  Osamu Wada

IPC分类号： H01L27/144 ,  H01L31/0232 ,  H01L31/105 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225 ,  H01L33/00

CPC分类号： H01L31/0232 ,  H01L27/1443 ,  H01L31/105

摘要： As semiconductor device includes a substrate and first and second semiconductor light receiving elements which are spaced apart and monolithically integrated on the substrate. The light receiving elements each has first and second terminals. A first flip-chip bonding pad is formed on the surface of the device and the device includes a first conductor element which electrically interconnects the first terminals of the elements in series and includes a centrally disposed portion that is electrically connected to the first flip-chip bonding pad. Second and third flip-chip bonding pads are also formed on a surface of the device and elongated electrodes are provided for electrically interconnecting the second terminal of the first light receiving element with the second flip-chip bonding pad and the second terminal of the second light receiving element with the third flip-chip bonding pad. The elongated electrodes have essentially the same length so as to stabilize the optical and electrical balance characteristics of the device and provide a satisfactory dual balance optical receiver.

摘要翻译： 由于半导体器件包括衬底和间隔开并且整体地集成在衬底上的第一和第二半导体光接收元件。 光接收元件各自具有第一和第二端子。 第一倒装芯片焊盘形成在器件的表面上，器件包括第一导体元件，其将元件的第一端子串联连接并且包括电中连接到第一倒装芯片的中心设置部分 接合垫。 第二和第三倒装芯片接合焊盘也形成在器件的表面上，并且提供细长电极用于将第一光接收元件的第二端子与第二倒装芯片接合焊盘和第二端子的第二端子电互连 接收元件与第三倒装芯片接合焊盘。 细长电极具有基本上相同的长度，以便稳定器件的光学和电气平衡特性并提供令人满意的双重平衡光学接收器。

公开(公告)号：US4581621A

公开(公告)日：1986-04-08

申请号：US626806

申请日：1984-07-02

申请人： Mark A. Reed

发明人： Mark A. Reed

IPC分类号： H01L29/80 ,  H01L27/06 ,  H01L27/10 ,  H01L29/06 ,  H01L29/32 ,  H01L29/66 ,  H01L29/68 ,  H01L29/76 ,  H01L29/225 ,  H01L29/88

CPC分类号： H01L27/0605 ,  H01L29/32 ,  H01L29/7606

摘要： Quantum-coupled devices, wherein at least two closely adjacent potential wells, (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias between the wells is adjusted to align energy levels of the two wells, tunneling will occur very rapidly, whereas when energy levels are not aligned, tunneling will be greatly reduced. To provide output coupling from these quantum-well devices to macroscopic currents, the output from the quantum-well devices is injected into localized states close to an extremely small metal line (e.g. 200 Angstroms square in section). These trapped charged perturb the resistance of a metal line significantly, so that a conventional sense amplifier can be used for differential sensing between two such narrow metal lines, to provide macroscopic outputs.

摘要翻译： 其中至少两个紧密相邻的势阱（例如AlGaAs晶格中的GaAs的岛）被制成足够小的量子耦合器件，使得阱内的载流子能级离散量化。 这意味着当孔之间的偏置被调整以对准两个井的能量水平时，隧穿将非常快速地发生，而当能级不对齐时，隧道效应将大大降低。 为了提供从这些量子阱器件到宏观电流的输出耦合，来自量子阱器件的输出被注入接近非常小的金属线（例如截面为200埃的正方形）的局部状态。 这些被捕获的电荷显着扰乱了金属线的电阻，使得常规的读出放大器可以用于两个这样的窄金属线之间的差分感测，以提供宏观的输出。

公开(公告)号：US4350990A

公开(公告)日：1982-09-21

申请号：US150248

申请日：1980-05-16

申请人： Wayne Lo

发明人： Wayne Lo

IPC分类号： H01L29/24 ,  H01L33/26 ,  H01L33/40 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L33/40 ,  H01L29/245 ,  H01L2224/85801 ,  H01L33/26

摘要： A significantly more stable ohmic contact for a lead-salt semiconductor surface, especially for use in infrared lasers. The contact has layers of platinum, palladium or nickel alternating with gold, and then covered with indium. An Au-Pd-Au-In contact is used on lead-sulfide-selenide, lead-tin-selenide, and lead-tin-telluride of high tin content. A Pt-Au-Pt-Sn contact is preferred for lead-tin-telluride of low tin content. Lower contact resistance is attained if P type lead-tin-selenide and lead-tin-telluride surfaces are previously doped with oxygen, and the initial metal layer is applied in a manner that does not remove it.

摘要翻译： 用于铅 - 盐半导体表面的显着更稳定的欧姆接触，特别是用于红外激光器。 接触层有铂，钯或镍层与金交替，然后用铟覆盖。 Au-Pd-Au-In接触用于硫化铅 - 硒化铅，锡 - 硒化锡和高锡含量的铅 - 锡 - 碲化物。 对于低锡含量的铅锡碲化物，优选Pt-Au-Pt-Sn接触。 如果P型铅锡 - 硒化物和铅 - 锡 - 碲化物表面预先掺杂氧，则获得较低的接触电阻，并且以不除去初始金属层的方式施加初始金属层。

公开(公告)号：US11735417B2

公开(公告)日：2023-08-22

申请号：US17325545

申请日：2021-05-20

申请人： Research & Business Foundation Sungkyunkwan University

发明人： Taesung Kim ,  Hyunho Seok ,  Hyeong U Kim ,  Jinill Cho ,  Kanade Chaitanya Kaluram

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/225 ,  H01L29/24 ,  H01L29/861 ,  H01L29/267

CPC分类号： H01L21/02614 ,  H01L21/02422 ,  H01L29/225 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/861 ,  H01L21/0256 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/02568

摘要： A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.

公开(公告)号：US11699749B2

公开(公告)日：2023-07-11

申请号：US16509022

申请日：2019-07-11

申请人： NaMLab gGmbH ,  Technische Universität Dresden

发明人： Stefan Schmult ,  Andre Wachowiak ,  Alexander Ruf

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/778 ,  H01L29/20 ,  H01L29/22 ,  H01L29/225 ,  H01L29/205

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/22 ,  H01L29/225 ,  H01L29/7788

摘要： An electronic circuit having a semiconductor device is provided that includes a heterostructure, the heterostructure including a first layer of a compound semiconductor to which a second layer of a compound semiconductor adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), wherein the 2-dimensional electron gas is not present. In aspects, an electronic circuit having a semiconductor device is provided that includes a III-V heterostructure, the III-V heterostructure including a first layer including GaN to which a second layer adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), and having a purity such that the 2-dimensional electron gas is not present. It is therefore advantageous for the present electronic circuit to be enclosed such that, in operation, no light of wavelengths of less than 400 nm may reach the III-V heterostructure and free charge carriers may be generated by these wavelengths.

公开(公告)号：US10658495B2

公开(公告)日：2020-05-19

申请号：US16157928

申请日：2018-10-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Injo Ok ,  Choonghyun Lee ,  Soon-Cheon Seo ,  Sungjae Lee

IPC分类号： H01L29/73 ,  H01L29/08 ,  H01L29/66 ,  H01L29/205 ,  H01L29/225 ,  H01L21/324 ,  H01L21/477 ,  H01L21/02 ,  H01L29/737 ,  H01L29/165

摘要： A method of forming a silicon-germanium heterojunction bipolar transistor (hbt) device is provided. The method includes forming a stack of four doped semiconductor layers on a semiconductor substrate. The method further includes forming a dummy emitter contact and contact spacers on a fourth doped semiconductor layer of the stack of four doped semiconductor layers, and removing portions of the second, third, and fourth semiconductor layers to form a vertical fin. The method further includes recessing the second and fourth doped semiconductor layers, and depositing a condensation layer on the second, third, and fourth doped semiconductor layers. The method further includes reacting the condensation layer with the third doped semiconductor layer to form a protective segment on a condensed protruding portion.

公开(公告)号：US10510924B2

公开(公告)日：2019-12-17

申请号：US14599181

申请日：2015-01-16

申请人： The Board of Trustees of the University of Illinois ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

发明人： Moonsub Shim ,  Nuri Oh ,  You Zhai ,  Sooji Nam ,  Peter Trefonas, III ,  Kishori Deshpande ,  Jake Joo

IPC分类号： H01L29/06 ,  H01L29/12 ,  H01L33/06 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/0296 ,  H01L31/0352 ,  H01L33/18 ,  H01L21/02 ,  H01L51/50 ,  H01L29/225 ,  H01L31/18 ,  H01L33/00 ,  H01L33/28 ,  H01L33/50 ,  H01L51/00 ,  B82Y20/00

摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.

公开(公告)号：US10431581B1

公开(公告)日：2019-10-01

申请号：US15966225

申请日：2018-04-30

申请人： QUALCOMM Incorporated

发明人： Xia Li ,  Gengming Tao ,  Bin Yang

IPC分类号： H01L27/06 ,  H01L27/092 ,  H01L29/205 ,  H01L29/225 ,  H01L21/8249 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/737

摘要： Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a substrate, a well region disposed adjacent to the substrate, a first fin disposed above the well region, a second fin disposed above the substrate, and a gate region disposed adjacent to each of the first fin and the second fin. The semiconductor device may also include at least one third fin disposed above the substrate, a support layer disposed above the at least one third fin, and a compound semiconductor device disposed above the support layer.

公开(公告)号：US10347793B2

公开(公告)日：2019-07-09

申请号：US15784905

申请日：2017-10-16

申请人： Sensor Electronic Technology, Inc.

发明人： Alexander Lunev ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/00 ,  H01L29/225 ,  H01L29/205 ,  H01L31/0336 ,  H01L29/267 ,  H01L31/00 ,  H01L33/14 ,  H01L31/0224 ,  H01L33/24 ,  H01L33/08

摘要： A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.

公开(公告)号：US09922826B2

公开(公告)日：2018-03-20

申请号：US15527287

申请日：2014-12-17

申请人： Intel Corporation

发明人： Sansaptak Dasgupta ,  Han Wui Then ,  Marko Radosavljevic ,  Robert S. Chau ,  Sanaz K. Gardner ,  Seung Hoon Sung

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/225 ,  H01L29/205 ,  H01L29/32 ,  H01L29/08 ,  H01L29/06 ,  H01L21/027 ,  H01L29/66 ,  H01L21/8258 ,  H01L27/06 ,  H01L29/778 ,  H01L29/22 ,  H01L23/00 ,  H01L27/092

CPC分类号： H01L21/0265 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0274 ,  H01L21/8258 ,  H01L23/48 ,  H01L24/16 ,  H01L25/065 ,  H01L27/0605 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0657 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/2203 ,  H01L29/225 ,  H01L29/267 ,  H01L29/32 ,  H01L29/66462 ,  H01L29/66969 ,  H01L29/7786 ,  H01L2224/16227 ,  H01L2924/15311

摘要： Embodiments of the present disclosure are directed towards an integrated circuit (IC) die. In embodiments, an IC die may include a semiconductor substrate, a group III-Nitride or II-VI wurtzite layer disposed over the semiconductor substrate, and a plurality of buffer structures at least partially embedded in the group III-Nitride or II-VI wurtzite layer. In some embodiments, each of the plurality of buffer structures may include a central member disposed over the semiconductor substrate, a lower lateral member disposed over the semiconductor substrate and extending laterally away from the central member, and an upper lateral member disposed over the central member and extending laterally from the central member in an opposite direction from the lower lateral member. The plurality of buffer structures may be positioned in a staggered arrangement to terminate defects of the group III-Nitride or II-VI wurtzite layer. Other embodiments may be described and/or claimed.