CMP pads having material composition that facilitates controlled conditioning

    公开(公告)号:US09669512B2

    公开(公告)日:2017-06-06

    申请号:US14454785

    申请日:2014-08-08

    CPC classification number: B24B37/245

    Abstract: Embodiments of the disclosure generally provides a method and apparatus for a polishing article or polishing pad having a microstructure that facilitates uniform conditioning when exposed to laser energy. In one embodiment, a polishing pad comprising a combination of a first material and a second material is provided, and the first material is more reactive to laser energy than the second material. In another embodiment, a method of texturing a composite polishing pad is provided. The method includes directing a laser energy source onto a surface of the polishing pad to affect a greater ablation rate within a first material having a greater laser absorption rate and a lesser ablation rate within a second material having a lesser laser absorption rate to provide a micro-textured surface consistent with microstructure of the composite polishing pad.

    Slurry for Selective Chemical Mechanical Polishing of Copper
    63.
    发明申请
    Slurry for Selective Chemical Mechanical Polishing of Copper 审中-公开
    用于铜的选择性化学机械抛光的浆料

    公开(公告)号:US20160040040A1

    公开(公告)日:2016-02-11

    申请号:US14456356

    申请日:2014-08-11

    CPC classification number: C09G1/02 B24B37/044 H01L21/3212

    Abstract: A slurry for selective chemical mechanical polishing of a copper layer is disclosed. The slurry includes either porous zeolite abrasive particles of substantially homogeneous composition having an average pore diameter of approximately 0.1-6 nanometers or hexagonal boron nitride abrasive particles. The slurry also includes an organic complexing compound that is 0.1-25 wt. % of the slurry, an oxidizer that is 0.1-10 wt. % of the slurry, and a solvent. A chemical mechanical polishing method for using the slurry is also disclosed.

    Abstract translation: 公开了一种用于铜层的选择性化学机械抛光的浆料。 浆料包括具有约0.1-6纳米的平均孔径或六方氮化硼磨料颗粒的基本上均匀组成的多孔沸石磨料颗粒。 该浆料还包括有机配位化合物,其为0.1-25wt。 %的浆料,氧化剂为0.1-10重量% %的浆料和溶剂。 还公开了一种使用该浆料的化学机械抛光方法。

    CONDITIONING OF GROOVING IN POLISHING PADS
    64.
    发明申请
    CONDITIONING OF GROOVING IN POLISHING PADS 有权
    抛光垫的调理

    公开(公告)号:US20150336236A1

    公开(公告)日:2015-11-26

    申请号:US14285545

    申请日:2014-05-22

    CPC classification number: B24B53/017 B23K26/36 B24B37/26 B26D3/06 B26F3/004

    Abstract: Among other things, a method comprises polishing a surface of a substrate by applying a pressure between the surface of a substrate and a surface of a polishing pad. The surface of the polishing pad defines one or more grooves separated by one or more partition regions. The one or more grooves have an initial depth before the polishing starts and extend from an initial outer surface of the one or more partition regions to an initial bottom of the one or more grooves. The method also comprises removing material below an initial bottom of the one or more grooves such that a distance between an outer surface of the one or more partition regions and a bottom of the one or more grooves remain substantially the same as the initial depth.

    Abstract translation: 除其他之外,一种方法包括通过在基板的表面和抛光垫的表面之间施加压力来抛光基板的表面。 抛光垫的表面限定了一个或多个由一个或多个分隔区隔开的槽。 一个或多个凹槽在抛光开始之前具有初始深度并且从一个或多个分隔区域的初始外表面延伸到一个或多个凹槽的初始底部。 该方法还包括在一个或多个凹槽的初始底部下方移除材料,使得一个或多个分隔区域的外表面与一个或多个凹槽的底部之间的距离保持与初始深度基本相同。

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