公开(公告)号：US20070284735A1

公开(公告)日：2007-12-13

申请号：US11596755

申请日：2005-10-06

申请人： Kazumasa Tanida ,  Shigo Higuchi ,  Takuya Kadoguchi

发明人： Kazumasa Tanida ,  Shigo Higuchi ,  Takuya Kadoguchi

IPC分类号： H01L23/12

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device (1, 1A, 21, 31, 41, 51) provided with a first semiconductor chip (3) having a first functional surface (3F) formed with a first functional element (3a), a protective resin layer (12) provided on the first functional surface, and an external connection terminal (10, 19, 52) provided on a peripheral portion of the first functional surface for external electrical connection, the external connection terminal having a bottom surface (10B, 19BB) exposed from a bottom surface (12B) of the protective resin layer facing away from the first functional surface and a side surface (10S, 19BS) exposed from a side surface (12S) of the protective resin layer.

摘要翻译： 设置有具有形成有第一功能元件（3a）的第一功能面（3F）的第一半导体芯片（3）的半导体装置（1,1A，21,41,41），保护树脂层 （12），设置在所述第一功能面的外部电连接的周边部的外部连接端子（10,19,52），所述外部连接端子具有底面（10B，19 BB）从保护树脂层的背离第一功能表面的底表面（12A）暴露的侧表面（10A，BBS）以及从保护树脂层的侧表面（12S）露出的侧表面（10S，19BS）。

公开(公告)号：US20070230153A1

公开(公告)日：2007-10-04

申请号：US11597422

申请日：2005-09-01

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/488

CPC分类号： H01L24/81 ,  H01L23/49811 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05099

摘要： A semiconductor device is provided with: a solid device having a connection surface formed with a connection electrode projected therefrom; a semiconductor chip which has a functional surface formed with a metal bump projected therefrom and which is bonded to the connection surface of the solid device as directing its functional surface to the connection surface and maintaining a predetermined distance between the functional surface and the connection surface; and a connecting member containing a low melting point metal having a lower solidus temperature than that of the connection electrode and the bump, and interconnecting the connection electrode and the bump. A sum of a height of the connection electrode and a height of the bump is not less than a half of the predetermined distance.

摘要翻译： 半导体器件具有：固体器件，其具有形成有从其突出的连接电极的连接表面; 半导体芯片，其具有形成有从其突出的金属凸块的功能表面，并且将其功能表面指向连接表面并且在功能表面和连接表面之间保持预定距离，并将其粘结到固体设备的连接表面; 以及连接构件，其包含具有比连接电极和凸块的固相线低的固相线温度的低熔点金属，并且使连接电极和凸块相互连接。 连接电极的高度和凸起的高度之和不小于预定距离的一半。

公开(公告)号：US20070200249A1

公开(公告)日：2007-08-30

申请号：US10593393

申请日：2005-08-04

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/48

CPC分类号： H05K3/3452 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83385 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K2201/0989 ,  H05K2201/10674 ,  H05K2201/10977 ,  H01L2924/0132 ,  H01L2924/00 ,  H01L2224/05552

摘要： The invention provides a wiring board (2,15) to which a semiconductor chip (3) is to be bonded while directing a surface of the semiconductor chip toward the wiring board. The wiring board includes a connection electrode (14) that is formed on a bonding surface (2a, 15a) to which the semiconductor chip is to be bonded and that is used to make a connection with the semiconductor chip, an insulating film (6) that is formed on the bonding surface and that has an opening (6a) to expose the connection electrode, and a low-melting-point metallic part (16) that is provided on the connection electrode in the opening and that is made of a low-melting-point metallic material whose solidus temperature is lower than that of the connection electrode.

摘要翻译： 本发明提供了一种将半导体芯片的表面朝向布线板引导的要接合半导体芯片（3）的布线板（2,15）。 布线基板包括连接电极（14），其形成在要与半导体芯片接合的接合面（2a，15a）上并用于与半导体芯片连接的绝缘膜（14） 6），其形成在接合面上并具有露出连接电极的开口（6a）和设置在开口中的连接电极上的低熔点金属部分（16） 的固相线温度低于连接电极的低熔点金属材料。

公开(公告)号：US08405227B2

公开(公告)日：2013-03-26

申请号：US10594561

申请日：2005-07-21

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/562 ,  H01L24/01 ,  H01L24/17 ,  H01L24/28 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L51/5246 ,  H01L2224/01 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/14 ,  H01L2924/153 ,  H01L2924/183 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

公开(公告)号：US08338904B2

公开(公告)日：2012-12-25

申请号：US12883674

申请日：2010-09-16

申请人： Kazumasa Tanida ,  Chiaki Takubo ,  Hideo Numata ,  Yoshihisa Imori

发明人： Kazumasa Tanida ,  Chiaki Takubo ,  Hideo Numata ,  Yoshihisa Imori

IPC分类号： H01L31/05

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14683

摘要： According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on the active layer, an insulating layer provided to cover the wiring layer, and a supporting substrate joined to the semiconductor substrate via the insulating layer to face the first surface of the semiconductor substrate. A joined body of the semiconductor substrate and the supporting substrate includes an intercalated portion provided between its outer peripheral surface and the active surface. The intercalated portion is provided to penetrate the semiconductor substrate and the insulating layer from the second surface of the semiconductor substrate and to reach inside the supporting substrate.

摘要翻译： 根据实施例，提供了一种半导体器件，其包括具有第一表面的半导体衬底，在该第一表面上设置有具有光接收部分的有源层和作为光接收部分的光接收表面的第二表面，布线层 设置在有源层上，设置为覆盖布线层的绝缘层，以及经由绝缘层与半导体基板接合以与半导体基板的第一表面相对的支撑基板。 半导体衬底和支撑衬底的接合体包括设置在其外周表面和活性表面之间的插入部分。 插入部分被设置为从半导体衬底的第二表面穿透半导体衬底和绝缘层并到达支撑衬底内部。

公开(公告)号：US20110304003A1

公开(公告)日：2011-12-15

申请号：US13152057

申请日：2011-06-02

申请人： Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Hideo Numata

发明人： Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Hideo Numata

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H04N5/2253 ,  H04N5/2254 ,  H01L2924/00014

摘要： According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active layer, a insulation layer that is formed on the wiring layer to have a concave portion, an embedded layer that is provided on the concave portion of the insulation layer, a bonding layer that is provided on the insulation layer and the embedded layer, and a substrate that is bonded to the bonding layer to face one surface of the semiconductor substrate are included.

摘要翻译： 根据实施例，半导体衬底，形成在半导体衬底的一个表面上的有源层，形成在有源层上并且在不接触的表面上包括作为凸部的线的布线层 在所述有源层上形成有在所述布线层上具有凹部的绝缘层，设置在所述绝缘层的凹部的嵌入层，设置在所述绝缘层和所述嵌入层上的接合层 并且包括结合到接合层以面向半导体衬底的一个表面的衬底。

公开(公告)号：US20110073974A1

公开(公告)日：2011-03-31

申请号：US12880838

申请日：2010-09-13

申请人： Eiji Takano ,  Hideo Numata ,  Kazumasa Tanida

发明人： Eiji Takano ,  Hideo Numata ,  Kazumasa Tanida

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L21/78 ,  H01L27/14683 ,  H01L2224/13

摘要： In one embodiment, a method for manufacturing a semiconductor device includes following steps. An aperture is formed in an interlayer insulating film formed on a semiconductor wafer apart from an integrated circuit portion by etching process. The interlayer insulating film has a dielectric constant smaller than a silicon oxide film (SiO2), and the width of the aperture is larger than a dicing region. A resin layer is embedded in the aperture. An adhesive layer is formed on the interlayer insulating film and the resin layer. The semiconductor wafer is attached to a glass substrate using the adhesive layer by Face Down method. The semiconductor wafer, the resin layer, and the adhesive layer on a dicing region are cut by blade dicing. The semiconductor wafer and the glass substrate adhered to the semiconductor wafer are cut into pieces by the blade dicing of the glass substrate under the dicing region.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括以下步骤。 在通过蚀刻工艺与集成电路部分隔开的半导体晶片上形成的层间绝缘膜中形成开口。 层间绝缘膜的介电常数小于氧化硅膜（SiO 2），并且孔径的宽度大于切割区域。 树脂层嵌入孔中。 在层间绝缘膜和树脂层上形成粘接层。 半导体晶片通过Face Down方法使用粘合剂层附着到玻璃基板上。 通过刀片切割切割切割区域上的半导体晶片，树脂层和粘合剂层。 通过在切割区域下方的玻璃基板的切片将切割半导体晶片和粘附到半导体晶片的玻璃基板切割成片。

公开(公告)号：US20100252902A1

公开(公告)日：2010-10-07

申请号：US12718419

申请日：2010-03-05

申请人： Kazumasa Tanida ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Kenji Takahashi

IPC分类号： H01L31/14 ,  H01L31/0232

CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01026 ,  H01L2924/04953

摘要： A semiconductor device, includes: a semiconductor substrate including a first surface and a second surface which are opposite to one another; a light receiving portion provided at the first surface of the semiconductor substrate; and an optical transparent protective member so as to cover and to be adjacent to the first surface or the second surface of the semiconductor substrate; wherein a plurality of depressed portions are formed at the optical transparent protective member so as to be opposite to the light receiving portion.

摘要翻译： 半导体器件包括：包括彼此相对的第一表面和第二表面的半导体衬底; 设置在所述半导体衬底的所述第一表面处的光接收部分; 以及光学透明保护构件，以覆盖并邻近半导体衬底的第一表面或第二表面; 其中在所述光学透明保护构件处形成多个凹陷部分以与所述光接收部分相对。

公开(公告)号：US07598613B2

公开(公告)日：2009-10-06

申请号：US11597422

申请日：2005-09-01

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/48 ,  H01L21/00 ,  B23K31/02

CPC分类号： H01L24/81 ,  H01L23/49811 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05099

摘要： A semiconductor device is provided with: a solid device having a connection surface formed with a connection electrode projected therefrom; a semiconductor chip which has a functional surface formed with a metal bump projected therefrom and which is bonded to the connection surface of the solid device as directing its functional surface to the connection surface and maintaining a predetermined distance between the functional surface and the connection surface; and a connecting member containing a low melting point metal having a lower solidus temperature than that of the connection electrode and the bump, and interconnecting the connection electrode and the bump. A sum of a height of the connection electrode and a height of the bump is not less than a half of the predetermined distance.

摘要翻译： 半导体器件具有：固体器件，其具有形成有从其突出的连接电极的连接表面; 半导体芯片，其具有形成有从其突出的金属凸块的功能表面，并且将其功能表面指向连接表面并且在功能表面和连接表面之间保持预定距离，并将其粘结到固体设备的连接表面; 以及连接构件，其包含具有比连接电极和凸块的固相线低的固相线温度的低熔点金属，并且使连接电极和凸块相互连接。 连接电极的高度和凸起的高度之和不小于预定距离的一半。

公开(公告)号：US20090079020A1

公开(公告)日：2009-03-26

申请号：US12212754

申请日：2008-09-18

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14618 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/16235 ,  H01L2224/05099

摘要： A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

摘要翻译： 半导体器件包括具有其中设置有光接收部分和电极的第一表面的半导体衬底。 半导体衬底具有连接第一表面和第二表面的穿透布线层。 透光性保护构件设置在半导体衬底上以覆盖第一表面。 在半导体衬底和透光保护构件之间设置间隙。 在透光保护部件的表面形成有保护膜。 保护膜具有设置在与受光部对应的区域的开口部。