公开(公告)号：US07332757B2

公开(公告)日：2008-02-19

申请号：US11415291

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US07319493B2

公开(公告)日：2008-01-15

申请号：US10805572

申请日：2004-03-19

申请人： Toshiyuki Hata ,  Hiroyuki Iwase

发明人： Toshiyuki Hata ,  Hiroyuki Iwase

IPC分类号： H04N5/222 ,  H04N9/74

CPC分类号： H04N5/265

摘要： A video signal processing apparatus 1 and a video processing parameter setting apparatus 2 comprise a video processing apparatus (visual mixer). A parameter value collectively specifying portion 3 specifies in accordance with the order stored in an arpeggiator pattern memory 7, sets of scene data which collectively specify values of a plurality of parameters stored in a scene data memory 6. A changing process portion 4 changes in a given length of time, the values of video processing parameters from the values currently set on the video signal processing apparatus 1 to the parameter values collectively specified as a set of scene data. The changing process is started at a timing corresponding to a change time and completed at a subsequent switch timing. As a result, the video processing apparatus allows for collective specification of parameters with simple operations and smooth switching between video images at the changing of parameter values.

摘要翻译： 视频信号处理装置1和视频处理参数设定装置2包括视频处理装置（视频混合器）。 参数值共同指定部分3根据存储在琶音器模式存储器7中的顺序指定集合指定存储在场景数据存储器6中的多个参数的值的场景数据集合。 改变处理部分4在给定的时间长度上改变视频处理参数的值，从视频信号处理设备1上当前设置的值到共同指定为一组场景数据的参数值。 改变过程在对应于改变时间的定时开始，并且在随后的切换定时完成。 结果，视频处理装置允许通过简单的操作对参数进行集体规范，并且在参数值的改变时允许视频图像之间的平滑切换。

公开(公告)号：US20070040249A1

公开(公告)日：2007-02-22

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US07173333B2

公开(公告)日：2007-02-06

申请号：US10972410

申请日：2004-10-26

申请人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

发明人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L29/80 ,  H01L31/0328

CPC分类号： H01L24/06 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.

摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。

公开(公告)号：US20060226532A1

公开(公告)日：2006-10-12

申请号：US11450333

申请日：2006-06-12

申请人： Yukihiro Satou ,  Toshiyuki Hata

发明人： Yukihiro Satou ,  Toshiyuki Hata

IPC分类号： H01L23/52

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US06992386B2

公开(公告)日：2006-01-31

申请号：US10828262

申请日：2004-04-21

申请人： Toshiyuki Hata ,  Hiroshi Sato

发明人： Toshiyuki Hata ,  Hiroshi Sato

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/83 ,  H01L23/49562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/33 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/84138 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

摘要翻译： 公开了一种防止半导体芯片破损的半导体器件。 该装置包括密封构件，半导体芯片，并且在第二主表面上的第一主表面和漏电极上具有源电极和栅电极，具有暴露于密封构件的上表面的上表面的第一电极板和 暴露于密封构件的下表面的下表面和每个具有暴露于密封构件的下表面的下表面的第二电极板。 芯片的漏电极通过粘合剂电连接到漏电极板。 螺柱型突起电极由源极和栅电极上的金线形成，并被导电粘合剂覆盖。 突起电极和源极和栅极电极板通过粘合剂彼此电连接。

公开(公告)号：US20050121777A1

公开(公告)日：2005-06-09

申请号：US10972410

申请日：2004-10-26

申请人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

发明人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

IPC分类号： H01L25/07 ,  H01L23/495 ,  H01L25/18 ,  H01L23/34

CPC分类号： H01L24/06 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.

摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。

公开(公告)号：US20050023670A1

公开(公告)日：2005-02-03

申请号：US10828262

申请日：2004-04-21

申请人： Toshiyuki Hata ,  Hiroshi Sato

发明人： Toshiyuki Hata ,  Hiroshi Sato

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/495 ,  H01L21/48

CPC分类号： H01L24/83 ,  H01L23/49562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/33 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/84138 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

摘要翻译： 公开了一种防止半导体芯片破损的半导体器件。 该装置包括密封构件，半导体芯片，并且在第二主表面上的第一主表面和漏电极上具有源电极和栅电极，具有暴露于密封构件的上表面的上表面的第一电极板和 暴露于密封构件的下表面的下表面和每个具有暴露于密封构件的下表面的下表面的第二电极板。 芯片的漏电极通过粘合剂电连接到漏电极板。 螺柱型突起电极由源极和栅电极上的金线形成，并被导电粘合剂覆盖。 突起电极和源极和栅极电极板通过粘合剂彼此电连接。

公开(公告)号：US06839223B2

公开(公告)日：2005-01-04

申请号：US10752550

申请日：2004-01-08

申请人： Kazuya Kawahara ,  Mitsuo Tadokoro ,  Yoshiki Hashimoto ,  Toshiyuki Hata ,  Morihiro Fukuda ,  Tsuyoshi Yoshino

发明人： Kazuya Kawahara ,  Mitsuo Tadokoro ,  Yoshiki Hashimoto ,  Toshiyuki Hata ,  Morihiro Fukuda ,  Tsuyoshi Yoshino

IPC分类号： H01G9/008 ,  H01G4/228 ,  H01G9/00 ,  H01G9/10

CPC分类号： H01G9/008 ,  H01G9/10

摘要： Disclosed is an aluminum electrolytic capacitor, wherein each of anode and cathode foils is joined to a corresponding portion of a leader line through at least two caulked joint sections formed at each of the opposite ends of the flat portion, and a plurality of pressure-welded joint sections formed between the respective caulked joint sections at the opposite ends. The chaulked joint sections formed at each of the opposite ends of the portion provide a high joint strength. Further, the pressure-welded joint sections formed between the respective caulked-join sections at the opposite ends of the portion allow an electrical connection between the foil and the leader line to be stably obtained at a low resistance. This joint structure can, therefore, be applied to small-size capacitors which have not been able to be obtained by using only caulked joint, to achieve an aluminum electrolytic capacitor having a sufficient joint strength and a highly reliable electrical connection.

公开(公告)号：US06812554B2

公开(公告)日：2004-11-02

申请号：US10265324

申请日：2002-10-07

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23495

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved. A MOSFET (70) comprises a plurality of inner leads electrically connected to a surface electrode of a semiconductor pellet having a field effect transistor on a principal surface thereof, a connecting portion for electrically connecting the surface electrode of the semiconductor pellet and the inner leads, a resin encapsulant (29) formed by encapsulating the semiconductor pellet with resin, a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

摘要翻译： 公开了一种具有高输出的半导体器件及其制造方法，其中降低了外部电阻并提高了辐射性能。 MOSFET（70）包括电连接到其主表面上具有场效应晶体管的半导体芯片的表面电极的多个内部引线，用于将半导体芯片的表面电极和内部引线电连接的连接部分， 通过用树脂封装半导体颗粒而形成的树脂密封剂（29），从树脂密封剂（29）的同一侧表面平行突出的多个外引线（37），（38）和粘合到 所述半导体芯片的背面具有从所述树脂密封剂（29）的与所述外引线突出的侧面相对的侧面突出的集管突出部（28c），所述集管（28）具有露出面 （28b）从所述树脂密封剂（29）暴露出来; 外引线（37），（38）弯曲; 并且暴露的外引线（37），（38）设置在基本相同的高度。