Abstract:
The present invention relates to an apparatus for generating an electron beam, comprising: a cathode; a housing which has an opening formed at one side thereof such that the cathode is coupled to the opening, and which has a resonant cavity formed therein; and a gasket interposed between the cathode and the housing such that the gasket is compressed in accordance with the coupling strength between the cathode and the housing so as to shut off the resonant cavity from the outside.
Abstract:
An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.
Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.
Abstract:
Embodiments described herein provide a method and apparatus for grounding a chamber isolation valve. In one embodiment, a grounded chamber isolation valve for a plasma processing system is described. The chamber isolation valve includes a door and a bracing member movably attached to and opposing the door, and at least one electrically conductive member in electrical communication with the door, the at least one electrically conductive member comprising one or more reaction bumpers disposed on the bracing member that are adapted to contact at least one grounded component of the plasma processing system when the door is in the closed position.
Abstract:
A sealing mechanism comprises a support member forming part of the semiconductor producing apparatus which has a vacuum chamber, a rotation shaft rotatably received in the support member, and at least three seal rings axially spaced apart from each other between the support member and the rotation shaft to form a first fluid chamber close to the atmosphere and a second fluid chamber close to the vacuum chamber. The first fluid chamber is vacuumized to have a first pressure, and the second fluid chamber is also vacuumized to have a second pressure which is lower than the first pressure. The first and second fluid chambers work together to enhance the sealing performance of the sealing mechanism.
Abstract:
A stage for processing a substrate, especially useful for vacuum applications, has a recess just large enough to hold a substantially flat substrate and a chuck or holder but not much more. The perimeter of the recessed side has an air bearing surface separated from the recess by differentially pumped groves and seal lands. The air bearing lands are urged against a reference plate guide surface and the seal lands being substantially coplanar create a resistance to flow between the groves and recess, on the other side of the base reference plate mounts the radiation source. The VCS may operate in a vacuum environment itself, or in another preferred embodiment, it provides the possibility for multiple stages moving between process or inspection steps within the same tool or process sequence.
Abstract:
The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.
Abstract:
An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber. The translation member chamber is isolated from the implantation chamber interior region by a dynamic seal. A workpiece holder support arm of the translation member extends through the dynamic seal and into the implantation chamber.
Abstract:
A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.
Abstract:
An assembly having first and second members arranged through a sealing member sandwiched between them is disclosed. The second member has a reference portion having a reference surface. The assembly includes a pressing portion which presses the first member against the reference surface in a direction substantially parallel to a surface of the second member. The second member is fixed to the first member while the first member abuts against the reference surface and the sealing member is compressed between the first and second members.