公开(公告)号：US08210040B2

公开(公告)日：2012-07-03

申请号：US12722707

申请日：2010-03-12

申请人： Hirofumi Higuchi ,  Akitoshi Yamanaka ,  Tetsuo Fujii

发明人： Hirofumi Higuchi ,  Akitoshi Yamanaka ,  Tetsuo Fujii

IPC分类号： G01C19/56 ,  G01P9/04 ,  G01P1/02

CPC分类号： G01C19/5719

摘要： An oscillating angular speed sensor includes a detector, a driving portion, and a separating portion. When an angular speed is generated while the detector is driven to oscillate by the driving portion, Coriolis force is applied to the detector. Therefore, the angular speed is detected based on a capacitance variation in accordance with a variation of an interval between a movable electrode and a fixed electrode of the detector. The separating portion is distanced from the detector and the driving portion, and is configured to separate a first space accommodating the detector and a second space accommodating the driving portion.

摘要翻译： 振动角速度传感器包括检测器，驱动部分和分离部分。 当检测器被驱动部分驱动振荡时产生角速度时，将科里奥利力施加到检测器。 因此，根据检测器的可动电极和固定电极之间的间隔的变化，基于电容变化来检测角速度。 分离部分远离检测器和驱动部分，并且被配置为分离容纳检测器的第一空间和容纳驱动部分的第二空间。

公开(公告)号：US08148809B2

公开(公告)日：2012-04-03

申请号：US12654707

申请日：2009-12-29

申请人： Kouji Senda ,  Satoshi Shiraki ,  Yukihiro Maeda ,  Shinichi Hirose ,  Tetsuo Fujii ,  Takashi Nakano

发明人： Kouji Senda ,  Satoshi Shiraki ,  Yukihiro Maeda ,  Shinichi Hirose ,  Tetsuo Fujii ,  Takashi Nakano

IPC分类号： H01L23/48

CPC分类号： H01L21/84 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49551 ,  H01L24/27 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit.

摘要翻译： 一种制造半导体器件的方法包括：制备由SOI衬底形成的晶片; 在主表面部分形成电路部分; 去除SOI衬底的支撑衬底; 将绝缘构件固定在半导体层的背面以与电路部分相对; 切割晶片并将晶片分成多个芯片; 在所述绝缘构件上设置与所述低电位基准电路的一部分相对的第一导电构件，并且在所述绝缘构件上配置与所述高电位基准电路的一部分相反的第二导电构件; 以及将所述第一导电构件与所述低电位参考电路的第一部分耦合，以及将所述第二导电构件与所述高电位参考电路的第二部分耦合。

公开(公告)号：US08098000B2

公开(公告)日：2012-01-17

申请号：US12230039

申请日：2008-08-21

申请人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

发明人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

IPC分类号： H01L41/08

CPC分类号： G01S7/521

摘要： An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.

摘要翻译： 一种用于检测物体的超声波传感器包括：具有压电体的压电元件和用于夹持压电体的第一和第二电极; 具有接收表面的声匹配元件，其接收由所述物体反射的超声波; 以及经由导线与压电元件电耦合的电路。 压电元件被嵌入在声匹配元件中，使得声匹配元件至少覆盖第一电极，压电元件的侧壁的一部分和电路与压电元件之间的线的一部分，以及侧壁 压电元件与第一电极相邻。

公开(公告)号：US08089144B2

公开(公告)日：2012-01-03

申请号：US12654087

申请日：2009-12-10

申请人： Tetsuo Fujii ,  Akitoshi Yamanaka ,  Hisanori Yokura

发明人： Tetsuo Fujii ,  Akitoshi Yamanaka ,  Hisanori Yokura

IPC分类号： H01L23/48

CPC分类号： G01P15/125 ,  B81B7/007 ,  B81B2207/097 ,  G01C19/5719 ,  G01C19/5783 ,  G01P15/0802 ,  G01P2015/0814 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13009 ,  H01L2224/13011 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/2518 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2224/48463 ,  H01L2224/80001 ,  H01L2224/81805 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

摘要翻译： 半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。 盖包括在盖的第二面上的第一布线层。 第一布线层跨越周边元件。 传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。 传感器侧连接部分接合到盖侧连接部分。 传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

公开(公告)号：US20110094303A1

公开(公告)日：2011-04-28

申请号：US12926970

申请日：2010-12-21

申请人： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

发明人： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

IPC分类号： G01C19/56 ,  B23P11/00

CPC分类号： G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

摘要翻译： 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。

公开(公告)号：US20110042741A1

公开(公告)日：2011-02-24

申请号：US12805733

申请日：2010-08-17

申请人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

发明人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC分类号： H01L29/772 ,  H01L23/498

CPC分类号： H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

摘要翻译： 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US07833876B2

公开(公告)日：2010-11-16

申请号：US12230209

申请日：2008-08-26

申请人： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

发明人： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

IPC分类号： H01L21/76

CPC分类号： H01L21/76264 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.

摘要翻译： 在半导体器件的制造中，在具有主侧和后侧的基板的元件形成区域中的至少一个元件形成区域中形成至少一个元件，并且通过从基板的后侧抛光基板而使基板变薄 在衬底的后侧形成多个沟槽，使得每个沟槽到达衬底的主侧。 之后，绝缘材料沉积在每个沟槽的内表面上，以在沟槽中形成绝缘层，使得元件形成区域被隔离。 由此，可以抑制基板的裂纹和结构的产生，并且能够抑制元件形成区域与基板的分离。

公开(公告)号：US20100176466A1

公开(公告)日：2010-07-15

申请号：US12654902

申请日：2010-01-07

申请人： Tetsuo Fujii ,  Masaki Inoue

发明人： Tetsuo Fujii ,  Masaki Inoue

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： G01P15/0802 ,  B81B7/007 ,  B81B7/02 ,  B81B2207/092 ,  B81B2207/095 ,  G01P1/023 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  H01L27/14601 ,  H01L27/148

摘要： A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.

摘要翻译： 半导体器件包括传感器部件和盖部件。 传感器构件具有表面并且包括第一感测部分。 第一感测部分包括位于传感器部件的表面侧并彼此电绝缘的第一和第二部分。 盖构件具有表面并且包括交叉布线部分。 盖构件的表面以传感器构件和帽构件密封第一感测部分的方式接合到传感器构件的表面。 十字布线部分将第一部分电连接到第二部分。

公开(公告)号：US20100109136A1

公开(公告)日：2010-05-06

申请号：US12588739

申请日：2009-10-27

申请人： Masao Yamada ,  Tetsuo Fujii

发明人： Masao Yamada ,  Tetsuo Fujii

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.

摘要翻译： 半导体器件包括引线框架，半导体芯片，基板，多个芯片部件，多个导线以及树脂部件。 引线框架包括芯片安装部分和多个引线部分。 半导体芯片安装在芯片安装部分上。 基板安装在芯片安装部分上。 芯片部件安装在基板上。 每个芯片部件在一个方向上具有第一端部部分和第二端部部分，并且每个芯片部分在第一端部具有第一电极，在第二端部具有第二电极。 每个电线将芯片部件之一的第二电极和引线部分中的一个耦合。 树脂构件覆盖引线框架，半导体芯片，基板，芯片部件和电线。

公开(公告)号：US07704763B2

公开(公告)日：2010-04-27

申请号：US10581940

申请日：2003-12-09

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。