公开(公告)号：US09324756B2

公开(公告)日：2016-04-26

申请号：US13558063

申请日：2012-07-25

Applicant: Chen-Hua Yu ,  Wen-Chih Chiou ,  Jing-Cheng Lin

Inventor： Chen-Hua Yu ,  Wen-Chih Chiou ,  Jing-Cheng Lin

IPC: H01L31/0232 ,  H01L27/146 ,  H01L31/02 ,  H01L21/768 ,  H01L23/48 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L27/14689 ,  H01L21/6835 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02002 ,  H01L31/02327 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/023 ,  H01L2224/13101 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A device includes a semiconductor substrate, an image sensor at a front surface of the semiconductor substrate, and a plurality of dielectric layers over the image sensor. A color filter and a micro lens are disposed over the plurality of dielectric layers and aligned to the image sensor. A through via penetrates through the semiconductor substrate. A Redistribution Line (RDL) is disposed over the plurality of dielectric layers, wherein the RDL is electrically coupled to the through via. A polymer layer covers the RDL.

Abstract translation: 一种器件包括半导体衬底，在半导体衬底的前表面处的图像传感器和图像传感器上的多个电介质层。 滤色器和微透镜设置在多个介电层上并与图像传感器对准。 穿通通孔穿过半导体衬底。 再分配线（RDL）设置在多个介电层上，其中RDL电连接到通孔。 聚合物层覆盖RDL。

公开(公告)号：US09064879B2

公开(公告)日：2015-06-23

申请号：US13228244

申请日：2011-09-08

Applicant: Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

Inventor： Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/56 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L21/683 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/147 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Packaging methods and structures for semiconductor devices that utilize a novel die attach film are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer and forming a die attach film (DAF) that includes a polymer over the carrier wafer. A plurality of dies is attached to the DAF, and the plurality of dies is packaged. At least the carrier wafer is removed from the packaged dies, and the packaged dies are singulated.

Abstract translation: 公开了利用新颖的芯片附着膜的半导体器件的封装方法和结构。 在一个实施例中，封装半导体器件的方法包括提供载体晶片并且在载体晶片上形成包括聚合物的管芯附着膜（DAF）。 多个模具附接到DAF，并且多个管芯被封装。 至少载体晶片从封装的管芯移除，并且封装的管芯被切割。

公开(公告)号：US09024438B2

公开(公告)日：2015-05-05

申请号：US13192756

申请日：2011-07-28

Applicant: Cheng-Lin Huang ,  I-Ting Chen ,  Ying Ching Shih ,  Po-Hao Tsai ,  Szu Wei Lu ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Cheng-Lin Huang ,  I-Ting Chen ,  Ying Ching Shih ,  Po-Hao Tsai ,  Szu Wei Lu ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L23/498 ,  H01L21/60 ,  H01L23/00

CPC classification number: H01L24/14 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0346 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/1161 ,  H01L2224/11622 ,  H01L2224/13011 ,  H01L2224/13014 ,  H01L2224/13078 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/1405 ,  H01L2224/14051 ,  H01L2224/145 ,  H01L2224/16238 ,  H01L2224/17107 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81897 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01053 ,  H01L2924/01079 ,  H01L2924/01051 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A conductive bump structure of a semiconductor device comprises a substrate comprising a major surface and conductive bumps distributed over the major surface of the substrate. Each of a first subset of the conductive bumps comprises a regular body, and each of a second subset of the conductive bumps comprises a ring-shaped body.

Abstract translation: 半导体器件的导电凸块结构包括包括主表面的衬底和分布在衬底的主表面上的导电凸块。 导电凸块的第一子集中的每一个包括规则体，并且导电凸块的第二子集中的每一个包括环形体。

公开(公告)号：US08963334B2

公开(公告)日：2015-02-24

申请号：US13221447

申请日：2011-08-30

Applicant: Jing-Cheng Lin ,  Szu Wei Lu ,  Ying-Ching Shih ,  Ying-Da Wang ,  Li-Chung Kuo ,  Long Hua Lee ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Jing-Cheng Lin ,  Szu Wei Lu ,  Ying-Ching Shih ,  Ying-Da Wang ,  Li-Chung Kuo ,  Long Hua Lee ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L23/498 ,  H01L25/065 ,  H01L21/683 ,  H01L23/00 ,  H01L25/00 ,  H01L21/768 ,  H01L21/56 ,  H01L23/58

CPC classification number: H01L24/81 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.

Abstract translation: 实施例是包括基板，第一模具和第二模具的结构。 衬底具有与第一表面相对的第一表面和第二表面。 衬底具有从第一表面延伸到第二表面的通孔衬底。 第一裸片附着在基片上，第一裸片耦合到基片的第一表面。 第二管芯附接到衬底，并且第二管芯耦合到衬底的第一表面。 第一距离在第一管芯的第一边缘和第二管芯的第一边缘之间，并且第一距离在与基板的第一表面平行的方向上。 第一距离等于或小于200微米。

公开(公告)号：US08759150B2

公开(公告)日：2014-06-24

申请号：US13488188

申请日：2012-06-04

Applicant: Hsien-Pin Hu ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Hung-Jung Tu

Inventor： Hsien-Pin Hu ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Hung-Jung Tu

IPC: H01L21/50

CPC classification number: H01L21/561 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/05001 ,  H01L2224/05027 ,  H01L2224/05571 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.

Abstract translation: 一种方法包括提供包括衬底的中介层晶片，以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔（TSV）。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后，在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。

公开(公告)号：US20140011301A1

公开(公告)日：2014-01-09

申请号：US13542896

申请日：2012-07-06

Applicant: Chien Rhone Wang ,  Kewei Zuo ,  Chen-Hua Yu ,  Jing-Cheng Lin ,  Yen-Hsin Liu

Inventor： Chien Rhone Wang ,  Kewei Zuo ,  Chen-Hua Yu ,  Jing-Cheng Lin ,  Yen-Hsin Liu

IPC: H01L21/66 ,  G06F19/00

CPC classification number: H01L22/20 ,  H01L21/76898 ,  H01L22/12

Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) fabrication method to form an IC structure having one or more through silicon via (TSV) features. The IC fabrication method includes performing a plurality of processing steps; collecting physical metrology data from the plurality of processing steps; collecting virtual metrology data from the plurality of processing steps based on the physical metrology data; generating a yield prediction to the IC structure based on the physical metrology data and the virtual metrology data; and identifying an action at an earlier processing step based on the yield prediction.

Abstract translation: 本公开提供了用于形成具有一个或多个贯穿硅通孔（TSV）特征的IC结构的集成电路（IC）制造方法的一个实施例。 IC制作方法包括执行多个处理步骤; 从多个处理步骤收集物理计量数据; 基于所述物理测量数据从所述多个处理步骤收集虚拟测量数据; 基于物理测量数据和虚拟测量数据，为IC结构生成产量预测; 以及基于所述产量预测在较早的处理步骤识别动作。

公开(公告)号：US08518753B2

公开(公告)日：2013-08-27

申请号：US13296922

申请日：2011-11-15

Applicant: Chih-Wei Wu ,  Szu Wei Lu ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Chih-Wei Wu ,  Szu Wei Lu ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L21/00

CPC classification number: H01L24/97 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A method comprises attaching a first side of an interposer on a carrier wafer. The first side of the interposer comprises a plurality of bumps. The carrier wafer comprises a plurality of cavities formed in the carrier wafer. Each bump on the first side of the interposer can fit into its corresponding cavity on the carrier wafer. Subsequently, the method comprises attaching a semiconductor die on the second side of the interposer to form a wafer stack, detaching the wafer stack from the carrier wafer and attaching the wafer stack to a substrate.

Abstract translation: 一种方法包括将插入件的第一侧附着在载体晶片上。 插入器的第一侧包括多个凸块。 载体晶片包括形成在载体晶片中的多个空腔。 插入器的第一侧上的每个凸块可以装配到载体晶片上的相应空腔中。 随后，该方法包括在插入器的第二侧上附加半导体管芯以形成晶片堆叠，将晶片堆叠与载体晶片分离并将晶片堆叠连接到基板。

公开(公告)号：US08426961B2

公开(公告)日：2013-04-23

申请号：US12823851

申请日：2010-06-25

Applicant: Ying-Ching Shih ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Ying-Ching Shih ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L21/48

CPC classification number: H01L21/76885 ,  H01L21/486 ,  H01L21/56 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/04105 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/2518 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/181 ,  H05K1/0306 ,  H05K1/185 ,  H05K3/4007 ,  H05K2203/016 ,  H05K2203/025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2224/16145 ,  H01L2924/00012

Abstract: A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.

Abstract translation: 一种装置包括：插入件，其包括基板; 以及衬底上的至少一个电介质层。 多个穿通基板通孔（TSV）穿透基板。 第一金属凸块在至少一个电介质层中并电耦合到多个TSV。 第二金属凸块在至少一个电介质层的上方。 模具嵌入在至少一个电介质层中并结合到第一金属凸块。

公开(公告)号：US08411459B2

公开(公告)日：2013-04-02

申请号：US12834943

申请日：2010-07-13

Applicant: Chen-Hua Yu ,  Jing-Cheng Lin

Inventor： Chen-Hua Yu ,  Jing-Cheng Lin

IPC: H05K7/00 ,  H05K1/16

CPC classification number: H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L25/03 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15321 ,  Y10T29/49124 ,  Y10T29/49165 ,  H01L2224/0401

Abstract: A device includes an interposer including a substrate, and a first through-substrate via (TSV) penetrating through the substrate. A glass substrate is bonded to the interposer through a fusion bonding. The glass substrate includes a second TSV therein and electrically coupled to the first TSV.

Abstract translation: 一种器件包括内插器，其包括衬底和穿透衬底的第一穿透衬底通孔（TSV）。 玻璃基板通过熔接结合到插入件上。 玻璃基板在其中包括第二TSV并且电耦合到第一TSV。

公开(公告)号：US20130062760A1

公开(公告)日：2013-03-14

申请号：US13228244

申请日：2011-09-08

Applicant: Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

Inventor： Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

IPC: H01L23/498 ,  H01L21/60 ,  H01L21/56

CPC classification number: H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/147 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Packaging methods and structures for semiconductor devices that utilize a novel die attach film are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer and forming a die attach film (DAF) that includes a polymer over the carrier wafer. A plurality of dies is attached to the DAF, and the plurality of dies is packaged. At least the carrier wafer is removed from the packaged dies, and the packaged dies are singulated.

Abstract translation: 公开了利用新颖的芯片附着膜的半导体器件的封装方法和结构。 在一个实施例中，封装半导体器件的方法包括提供载体晶片并且在载体晶片上形成包括聚合物的管芯附着膜（DAF）。 多个模具附接到DAF，并且多个管芯被封装。 至少载体晶片从封装的管芯移除，并且封装的管芯被切割。