公开(公告)号：US20180323340A1

公开(公告)日：2018-11-08

申请号：US15990494

申请日：2018-05-25

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

IPC: H01L33/08 ,  H01L33/32 ,  H01S5/042 ,  H01S5/343 ,  H01L33/06 ,  H01S5/10 ,  H01S5/34 ,  H01S5/40 ,  H01S5/20

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/1096 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093

Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

公开(公告)号：US09948065B2

公开(公告)日：2018-04-17

申请号：US15123381

申请日：2015-03-05

Applicant: Yury Georgievich Shreter ,  Yury Toomasovich Rebane ,  Aleksey Vladimirovich Mironov

Inventor： Yury Georgievich Shreter ,  Yury Toomasovich Rebane ,  Aleksey Vladimirovich Mironov

IPC: F21V9/16 ,  H01S5/40 ,  H01S5/20 ,  H01S5/343 ,  F21Y115/30

CPC classification number: H01S5/4043 ,  F21V9/30 ,  F21Y2115/30 ,  H01S5/005 ,  H01S5/1071 ,  H01S5/1075 ,  H01S5/2031 ,  H01S5/34333 ,  H01S5/4018 ,  H01S5/4056

Abstract: The present invention proposes a semiconductor light-emitting device having an axis of symmetry, the device including two or more laser diodes, each of the laser diodes has an axis of symmetry, wherein the laser diodes are arranged in series on the axis of symmetry of the light-emitting device in such a way that their axes of symmetry coincide, wherein faces of the laser diodes are connected so that they are in electric and mechanic contact and form a bar of the laser diodes, a directional pattern of radiation thereof has an axis of symmetry coinciding with the axis of symmetry of the light-emitting device. The proposed light-emitting device can be used in laser lamps of white light for exciting phosphors since it provides a high degree of flare of cylindrical surfaces.

公开(公告)号：US09865990B2

公开(公告)日：2018-01-09

申请号：US15160634

申请日：2016-05-20

Applicant: Thorlabs Quantum Electronics, Inc.

Inventor： Catherine Genevieve Caneau ,  Lawrence Charles Hughes ,  Feng Xie ,  Chung-En Zah

IPC: H01S3/10 ,  H01S5/0687 ,  H01S5/028 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/34 ,  H01S5/12 ,  B82Y20/00 ,  H01S3/1055 ,  H01S5/00 ,  H01S5/125 ,  H01S5/10 ,  H01S5/40

CPC classification number: H01S5/0687 ,  B82Y20/00 ,  H01S3/1055 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1096 ,  H01S5/1218 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/4043 ,  H01S5/4087

Abstract: A method of characterizing a monolithic tunable mid-infrared laser including a heterogeneous quantum cascade active region together with a least first and a second tunable integrated distributed feedback gratings, the method including operating the laser while tuning the first grating through its full tuning range, while holding the reflectivity function of the second grating constant, then operating the laser while tuning the second grating through its full tuning range, while holding the reflectivity function of the first grating constant.

公开(公告)号：US20170353011A1

公开(公告)日：2017-12-07

申请号：US15682692

申请日：2017-08-22

Applicant: Furukawa Electric Co., LTD.

Inventor： Yasumasa Kawakita ,  Noriyuki Yokouchi

IPC: H01S5/34

CPC classification number: H01S5/34 ,  H01S5/0601 ,  H01S5/106 ,  H01S5/2272 ,  H01S5/309 ,  H01S5/3203 ,  H01S5/4043 ,  H01S2304/00

Abstract: A semiconductor optical device includes an active layer, the active layer including a plurality of quantum well layers having gain peak wavelengths different from one another in a layering direction thereof, and a plurality of barrier layers, wherein the quantum well layers and the barrier layers are alternately layered over each other, and an n-type dopant has been added in the plurality of quantum well layers having gain peak wavelengths different from one another and in the plurality of barrier layers.

公开(公告)号：US20170288370A1

公开(公告)日：2017-10-05

申请号：US15479206

申请日：2017-04-04

Applicant: nLIGHT, Inc.

Inventor： Zhigang Chen ,  Manoj Kanskar

IPC: H01S5/10 ,  H01S5/40 ,  H01S5/022 ,  H01S5/00 ,  H01S3/094 ,  H01S3/067 ,  H01S5/30 ,  H01S5/026 ,  H01S5/343 ,  H01S3/0941

CPC classification number: H01S5/3095 ,  G02B27/106 ,  G02B27/145 ,  H01S5/005 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/4012 ,  H01S5/4018 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4068 ,  H01S5/4081

Abstract: Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.

公开(公告)号：US09746627B2

公开(公告)日：2017-08-29

申请号：US15062744

申请日：2016-03-07

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yuta Ishige ,  Naoki Hayamizu ,  Etsuji Katayama ,  Toshio Kimura

IPC: G02B6/42 ,  H01S5/40 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  G02B6/26

CPC classification number: G02B6/4296 ,  G02B6/262 ,  G02B6/4206 ,  H01S5/0071 ,  H01S5/02216 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/02469 ,  H01S5/4012 ,  H01S5/4043

Abstract: A semiconductor laser module includes a semiconductor laser element outputting a laser light; an optical fiber; an optical component disposed at an outer periphery of the optical fiber and fixing the optical fiber; a first-fixing agent fastening the optical component and the optical fiber; a light-absorbing element disposed at an outer periphery of the optical component and fixing the optical component; a first light-blocking portion disposed between an end into which the laser light is incident of the optical fiber and the optical component; and a housing accommodating therein the semiconductor laser element, an end into which the laser light is incident of the optical fiber and the first light-blocking portion. The optical component has an optical transmittance at a wavelength of the laser light, and the light-absorbing element has an optical absorptivity at a wavelength of the laser light.

公开(公告)号：US09692210B2

公开(公告)日：2017-06-27

申请号：US14677610

申请日：2015-04-02

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alfred Lell ,  Martin Strassburg

IPC: H01L21/00 ,  H01S5/40 ,  H01S5/026 ,  H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/323

CPC classification number: H01S5/4043 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/2059 ,  H01S5/3013 ,  H01S5/3095 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/34313 ,  H01S5/405 ,  H01S5/4087 ,  H01S5/4093 ,  H01S2301/173

Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

公开(公告)号：US20160359084A1

公开(公告)日：2016-12-08

申请号：US15173511

申请日：2016-06-03

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/08

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/1096 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093

Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

Abstract translation: 本文公开了用于掺入中间载体阻挡层的半导体发光器件（LED）的多层光学活性区域，所述中间载体阻挡层具有用于组合物和掺杂水平的设计参数，以提供对横跨载流子阻挡层的载流子注入分布的有效控制 活性区域以实现期望的器件注入特性。 本文中讨论的实施例的示例包括：在可见光范围内操作的全部覆盖RGB色域的多量子阱可变颜色LED，在可见光范围内工作的多量子阱可变颜色LED，具有扩展 超出标准RGB色域的色域，具有可变色温的多量子阱发光白光LED，以及具有均匀填充的有源层的多量子阱LED。

公开(公告)号：US20160322782A1

公开(公告)日：2016-11-03

申请号：US15107812

申请日：2014-12-30

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell ,  Shuji Nakamura ,  Claude C.A. Weisbuch

IPC: H01S5/04 ,  H01L27/15 ,  H01L33/46 ,  H01S5/042 ,  H01S5/40 ,  H01L33/06 ,  H01S5/32 ,  H01L33/00 ,  H01S5/125 ,  H01S5/10 ,  H01L33/14 ,  H01S5/343 ,  H01L33/32 ,  H01L33/18

CPC classification number: H01S5/041 ,  H01L27/153 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0083 ,  H01S5/022 ,  H01S5/0287 ,  H01S5/042 ,  H01S5/1003 ,  H01S5/125 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4043 ,  H01S5/4093

Abstract: The monolithic integration of optically-pumped and electrically-injected III-nitride light-emitting devices. This structure does not involve the growth of p-type layers after an active region for a first III-nitride light-emitting device, and thus avoids high temperature growth steps after the fabrication of the active region for the first III-nitride light emitting device. Since electrical injection in such a structure cannot be possible, a second III-nitride light-emitting device is used to optically pump the first III-nitride light emitting device. This second III-nitride light emitting device emits light at a shorter wavelength region of the optical spectrum than the first III-nitride light emitting device, so that it can be absorbed by the active region of the first III-nitride light-emitting device, which in turn emits light at a longer wavelength region of the optical spectrum than the second III-nitride light emitting device.

Abstract translation: 光泵浦和电注入的III族氮化物发光器件的单片集成。 这种结构不涉及在用于第一III族氮化物发光器件的有源区域之后的p型层的生长，并且因此在制造用于第一III族氮化物发光器件的有源区域之后避免高温生长步骤 。 由于在这种结构中的电注入是不可能的，所以使用第二III族氮化物发光器件来光学地泵浦第一III族氮化物发光器件。 该第二III族氮化物发光器件在比第一III族氮化物发光器件的光谱的较短波长区域发光，从而可以被第一III族氮化物发光器件的有源区域吸收， 其继而在第二III族氮化物发光器件的光谱的较长波长区域发射光。

公开(公告)号：US09368939B2

公开(公告)日：2016-06-14

申请号：US14559149

申请日：2014-12-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/00 ,  H01S5/022 ,  H01S5/20 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。