公开(公告)号：US20060160374A1

公开(公告)日：2006-07-20

申请号：US11233988

申请日：2005-09-09

Applicant: Dustin Ho ,  Derek Witty ,  Helen Armer ,  Hichem M'Saad

Inventor： Dustin Ho ,  Derek Witty ,  Helen Armer ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76801 ,  C23C16/401 ,  C23C16/4405 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76828 ,  H01L2221/1047

Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

公开(公告)号：US07064078B2

公开(公告)日：2006-06-20

申请号：US10768724

申请日：2004-01-30

Applicant: Wei Liu ,  Jim Zhongyi He ,  Sang H. Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy H. Yeh ,  Chistopher D. Bencher

Inventor： Wei Liu ,  Jim Zhongyi He ,  Sang H. Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy H. Yeh ,  Chistopher D. Bencher

IPC: H01L21/302

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146

Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

Abstract translation: 提供蚀刻基板的方法。 蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。 任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

公开(公告)号：US07049200B2

公开(公告)日：2006-05-23

申请号：US10854013

申请日：2004-05-25

Applicant: Reza Arghavani ,  Ken MacWilliams ,  Hichem M'Saad

Inventor： Reza Arghavani ,  Ken MacWilliams ,  Hichem M'Saad

IPC: H01L21/336

CPC classification number: H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

Abstract: A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3 and bis-(tertiarybutylamine)silane, and striking a second plasma to form a carbon-doped nitride layer on the oxide layer, where the second plasma may be generated from a nitride gas that includes NH3 and the bis-(tertiarybutylamine)silane. The first and second plasmas may be formed using plasma CVD and the bis-(tertiarybutylamine)silane flows uninterrupted between the striking of the first plasma and the striking of the second plasma.

Abstract translation: 一种在金属氧化物半导体器件的栅电极上形成侧壁间隔物的方法，其包括冲击第一等离子体以在栅电极的一侧上形成氧化物层，其中第一等离子体由氧化物气体产生， 和三（叔丁基胺）硅烷，并且冲击第二等离子体以在氧化物层上形成碳掺杂的氮化物层，其中第二等离子体可以由氮化物气体产生， 3和双 - （叔丁胺）硅烷。 可以使用等离子体CVD形成第一和第二等离子体，并且双（叔丁胺）硅烷在第一等离子体的击打和第二等离子体的击打之间不间断地流动。

公开(公告)号：US20050263248A1

公开(公告)日：2005-12-01

申请号：US11131010

申请日：2005-05-16

Applicant: Juan Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Kim ,  Hichem M'Saad ,  Daemian Raj

Inventor： Juan Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Kim ,  Hichem M'Saad ,  Daemian Raj

IPC: C23C16/44 ,  C23C16/455 ,  C23F1/00 ,  H01J37/32

CPC classification number: C23C16/45574 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

Abstract translation: 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US20050215065A1

公开(公告)日：2005-09-29

申请号：US10808231

申请日：2004-03-23

Applicant: Son Nguyen ,  Hichem M'Saad ,  Bok Kim

Inventor： Son Nguyen ,  Hichem M'Saad ,  Bok Kim

IPC: C23C16/30 ,  H01B3/46 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31111 ,  H01L21/31695 ,  H01L21/7682

Abstract: A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO2) and boron oxide (B2O3). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film.

Abstract translation: 公开了一种用于电子器件的多孔绝缘膜，其通过去除可溶性纳米相致密剂而形成。 通过化学气相沉积（CVD）或通过玻璃上的旋转（S.O.G.）制备其中分散有可溶性致孔剂的硅基电介质膜。 优选的致​​孔剂的实例包括化合物，例如氧化锗（GeO 2 N 2）和氧化硼（B 2 O 3 O 3）。 热水可用于湿法蚀刻膜的处理，从而除去致孔剂并提供多孔介电膜。 为了进一步降低膜的介电常数，硅基电介质膜可以是碳掺杂的氧化硅。 此外，可以通过电子束处理多孔电介质膜以增强膜的电气和机械性能。

公开(公告)号：US20050202685A1

公开(公告)日：2005-09-15

申请号：US10801190

申请日：2004-03-15

Applicant: Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

Inventor： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

IPC: C23C16/02 ,  C23C16/32 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

Abstract translation: 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成 在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第 电介质起始层。

公开(公告)号：US20050202683A1

公开(公告)日：2005-09-15

申请号：US10799146

申请日：2004-03-12

Applicant: Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

Inventor： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

IPC: H01L21/469

CPC classification number: G03F7/094 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/7684

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

Abstract translation: 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层 并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义 层。 无定形碳层可用作蚀刻停止层，抗反射涂层或两者。

公开(公告)号：US20050186339A1

公开(公告)日：2005-08-25

申请号：US10783316

申请日：2004-02-20

Applicant: Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

Inventor： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC: C23C16/02 ,  C23C16/42 ,  C23C16/52 ,  H01L21/768 ,  C23C16/00 ,  H05H1/24

CPC classification number: H01L21/76838 ,  C23C16/0272 ,  C23C16/42

Abstract: Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

Abstract translation: 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20050167394A1

公开(公告)日：2005-08-04

申请号：US10768724

申请日：2004-01-30

Applicant: Wei liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Chistopher Bencher

Inventor： Wei liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Chistopher Bencher

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/314 ,  C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146

Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

Abstract translation: 提供蚀刻基板的方法。 蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。 任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

公开(公告)号：US20050037153A1

公开(公告)日：2005-02-17

申请号：US10642081

申请日：2003-08-14

Applicant: Francimar Schmitt ,  Hichem M'Saad

Inventor： Francimar Schmitt ,  Hichem M'Saad

IPC: C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H05H1/24

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film includes providing a gas mixture including one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture further includes one or more oxidizing gases. The ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20. Preferably, the low dielectric constant film has compressive stress.

Abstract translation: 沉积低介电常数膜的方法包括向腔室中的基底提供包括一种或多种环状有机硅氧烷和一种或多种惰性气体的气体混合物。 一方面，气体混合物还包括一种或多种氧化性气体。 一个或多个环状有机硅氧烷进入室中的总流速与进入室中的一种或多种惰性气体的总流量的比例为约0.10至约0.20。 优选地，低介电常数膜具有压应力。