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公开(公告)号：US08906796B2
公开(公告)日：2014-12-09
申请号：US13582239
申请日：2011-03-02
IPC分类号： H01L21/3205 , H01L29/45 , H01L21/285 , H01L29/66 , H01L21/28 , H01L29/20
CPC分类号： H01L21/28575 , H01L21/28264 , H01L29/2003 , H01L29/452 , H01L29/66522
摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.
摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。
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82.发明授权Solar cell wherein solar photovolatic thin film is directly formed on base 有权太阳能电池，其中太阳光伏薄膜直接形成在基底上公开(公告)号：US08841545B2
公开(公告)日：2014-09-23
申请号：US12735692
申请日：2009-02-10
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/048
CPC分类号： H01L31/048 , H01L31/02167 , Y02B10/12 , Y02E10/50
摘要： Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film.
摘要翻译： 公开了一种太阳能电池，其包括形成在基底上的太阳能电池半导体薄膜，形成在半导体薄膜上的透明导电膜和覆盖透明导电膜的上表面的含氮化物的防潮扩散膜。 防潮防止膜优选由至少氮化硅膜或碳化硅氮化物（SiCN）膜构成。
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公开(公告)号：US08497214B2
公开(公告)日：2013-07-30
申请号：US12675289
申请日：2008-08-07
IPC分类号： H01L21/302
CPC分类号： H01L21/02164 , C23C16/511 , H01J37/32192 , H01L21/02274 , H01L21/31055 , H01L21/31116
摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.
摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。
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公开(公告)号：US08198195B2
公开(公告)日：2012-06-12
申请号：US11992540
申请日：2005-09-26
申请人： Tadahiro Ohmi , Akinobu Teramoto
发明人： Tadahiro Ohmi , Akinobu Teramoto
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3065 , C23C16/402 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32449
摘要： A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
摘要翻译： 一种等离子体处理装置，其中尽可能地抑制昂贵的氪气和氙气的消耗，同时减少等离子体处理期间对工件的损坏。 在使用稀有气体的基板的等离子体处理中，使用两种以上的不同种类的稀有气体，廉价的氩气用作一种稀有气体，氪气和氙气气体中的任何一种或两者具有较大的碰撞横截面 作为其他气体，使用与氩气相比的电子区域。 因此，尽可能地抑制昂贵的氪气和氙气的消耗，并且在等离子体处理期间减少了工件上的损坏。
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公开(公告)号：US20110110052A1
公开(公告)日：2011-05-12
申请号：US12995514
申请日：2009-05-22
CPC分类号： H05K1/0218 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2223/6688 , H01L2924/0002 , H01L2924/19032 , H01L2924/3011 , H05K1/025 , H05K1/0265 , H05K3/4652 , H05K2201/0191 , H05K2201/0352 , H05K2201/0715 , H05K2201/096 , H05K2201/09618 , H05K2201/09727 , H05K2201/09972 , H01L2924/00
摘要： A multilayer wiring board 100 comprises a first wiring region 101 where wirings 103a and insulating layers 104a and 104b are alternately laminated, and a second wiring region 102 where a thickness H2 of an insulating layer 104 is twice or more a thickness H1 of the insulating layer in the first wiring region 101 and a width W2 of a wiring 103b is twice or more a width W1 of the wiring in the first wiring region 101. The first wiring region 101 and the second wiring region 102 are integrally formed on the same board.
摘要翻译： 多层布线基板100包括：布线103a和绝缘层104a，104b交替层叠的第一布线区域101和绝缘层104的厚度H2为绝缘层的厚度H1的两倍以上的第二布线区域102 在第一布线区域101中，布线103b的宽度W2是第一布线区域101中的布线的宽度W1的两倍或更多倍。第一布线区域101和第二布线区域102一体地形成在同一个板上。
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公开(公告)号：US07928518B2
公开(公告)日：2011-04-19
申请号：US12568415
申请日：2009-09-28
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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87.发明申请CONTACT FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE 审中-公开接触形成方法，半导体器件制造方法和半导体器件公开(公告)号：US20110073922A1
公开(公告)日：2011-03-31
申请号：US12992023
申请日：2009-04-17
IPC分类号： H01L29/78 , H01L21/425
CPC分类号： H01L21/28518 , H01L21/26513 , H01L21/28052 , H01L21/324 , H01L21/823814 , H01L21/823864 , H01L29/665 , H01L29/6656 , H01L29/66575
摘要： A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed.
摘要翻译： 半导体器件制造方法包括以下步骤：将p型或n型杂质离子注入到Si层部分中以成为半导体器件的p型或n型接触区域，形成用于 在接触区域的表面上的接触，而不进行用于在离子注入步骤之后激活注入离子的热处理，并且通过使金属通过加热与Si层部分反应而形成金属膜的金属的硅化物。 期望同时进行形成硅化物的步骤和在形成金属膜之后通过热处理激活注入的离子的步骤。
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公开(公告)号：US20110017501A1
公开(公告)日：2011-01-27
申请号：US12935662
申请日：2009-03-26
CPC分类号： H05K1/0373 , B22F1/02 , B22F2998/00 , C22C2202/02 , H01F1/24 , H01F1/26 , H01F1/37 , H05K1/0233 , H05K1/024 , H05K2201/0209 , H05K2201/0215 , H05K2201/0224 , H05K2201/0245 , H05K2201/086 , Y10T428/24 , Y10T428/25 , Y10T428/256 , Y10T428/257 , Y10T428/258 , B22F3/16
摘要： This invention provides a composite material useful for size reduction of electronic components and circuit boards mounted on electronic equipment and exhibiting a low magnetic loss (tan δ), and a manufacturing method thereof. The composite material contains an insulating material and particulates dispersed in this insulating material, the particulates being previously coated with an insulating material having substantially the same composition as that of the coating insulating material. The particulates consist of an organic or inorganic substance and preferably have a flat shape. The insulating material may be an insulating material commonly used in the field of electronic components. The composite material of the invention is preferably manufactured by a manufacturing method in which the particulates are previously coated with an insulating material and dispersed in an insulating material having substantially the same composition as that of the coating insulating material. The composite material of the invention can be applied as a material for circuit boards and/or electronic components to realize further reduction in size and power consumption of information and telecommunication equipment in a frequency band of several hundred MHz to 1 GHz.
摘要翻译： 本发明提供一种复合材料及其制造方法，该复合材料可用于安装在电子设备上的电子部件和电路板的尺寸减小并且具有低的磁损耗（tanδ）。 复合材料包含绝缘材料和分散在该绝缘材料中的微粒，预先用绝缘材料涂覆颗粒，该绝缘材料具有与涂层绝缘材料基本相同的组成。 微粒由有机或无机物构成，优选具有平坦的形状。 绝缘材料可以是电子部件领域中常用的绝缘材料。 本发明的复合材料优选通过制造方法制造，其中颗粒预先用绝缘材料涂覆并分散在具有与涂层绝缘材料基本相同的组成的绝缘材料中。 本发明的复合材料可以用作电路板和/或电子部件的材料，以实现在数百MHz至1GHz的频带内的信息和电信设备的尺寸和功耗的进一步减小。
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公开(公告)号：US20100213516A1
公开(公告)日：2010-08-26
申请号：US12681576
申请日：2008-10-06
申请人： Tadahiro Ohmi , Akinobu Teramoto , Tomoyuki Suwa , Rihito Kuroda , Hideo Kudo , Yoshinori Hayamizu
发明人： Tadahiro Ohmi , Akinobu Teramoto , Tomoyuki Suwa , Rihito Kuroda , Hideo Kudo , Yoshinori Hayamizu
IPC分类号： H01L29/04 , H01L29/786
CPC分类号： H01L29/045 , H01L21/02381 , H01L21/02433 , H01L29/78
摘要： On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).
摘要翻译： 在半导体基板的表面上，以大致相同的方向形成有以原子台阶逐步形成的多个台阶。 使用半导体衬底，形成MOS晶体管，使得在载流子行进方向（源 - 漏方向）上不存在台阶。
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公开(公告)号：US20100072519A1
公开(公告)日：2010-03-25
申请号：US12568415
申请日：2009-09-28
IPC分类号： H01L29/04
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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