Method of forming a micro device transfer head with silicon electrode
    85.
    发明授权
    Method of forming a micro device transfer head with silicon electrode 有权
    用硅电极形成微器件转印头的方法

    公开(公告)号:US09034754B2

    公开(公告)日:2015-05-19

    申请号:US13481615

    申请日:2012-05-25

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中,微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

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