公开(公告)号：US09129778B2

公开(公告)日：2015-09-08

申请号：US13051713

申请日：2011-03-18

申请人： Armin Huseinovic ,  Ivan L. Berry

发明人： Armin Huseinovic ,  Ivan L. Berry

IPC分类号： H01J37/32 ,  C23C16/452 ,  C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4558 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32633

摘要： A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path configured to allow the central portion to expand and rotate with respect to the perimeter portion.

摘要翻译： 用于衬底处理系统的流体分配构件组件包括具有中心部分和周边部分的流体分配构件。 流体分配构件限定形成在其中的至少一个狭槽，并且所述至少一个狭槽沿着非径向路径延伸，所述非径向路径被构造成允许中心部分相对于周边部分膨胀和旋转。

公开(公告)号：US09095038B2

公开(公告)日：2015-07-28

申请号：US13337248

申请日：2011-12-26

申请人： Shi Gang ,  Songlin Xu ,  TuQiang Ni

发明人： Shi Gang ,  Songlin Xu ,  TuQiang Ni

IPC分类号： C23F1/00 ,  H05H1/30 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H05H1/30 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/3065

摘要： An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

摘要翻译： ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部，并且位于衬底支撑件的上方，但位于多个气体喷射器下方，以便改变处理气体的流动。

公开(公告)号：US09032906B2

公开(公告)日：2015-05-19

申请号：US11873129

申请日：2007-10-16

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick C. Wu ,  Schubert S. Chu

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/18 ,  C23C16/509 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个 的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。 在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

公开(公告)号：US20150044878A1

公开(公告)日：2015-02-12

申请号：US14525716

申请日：2014-10-28

申请人： Lam Research Corporation

发明人： John Patrick Holland ,  Peter L.G. Ventzek ,  Harmeet Singh ,  Richard Gottscho

IPC分类号： H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32899 ,  H01L21/3065

摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

摘要翻译： 半导体基板处理系统包括具有处理区域和基板支撑体的室。 该系统包括设置在基板支撑件上方的室内的顶板组件。 顶板组件包括分别形成在顶板组件的下表面中的第一组和第二组等离子体微室。 气体供应通道的第一网络通过顶板组件形成，以将第一工艺气体流动到第一组等离子体微室，以转化为第一等离子体。 通过顶板组件形成一组排气通道。 第二组等离子体微室形成在排气通道组内。 气体供应通道的第二网络通过顶板组件形成，以将第二工艺气体流动到第二组等离子体微室，以转化为第二等离子体。

公开(公告)号：US20140302681A1

公开(公告)日：2014-10-09

申请号：US14082009

申请日：2013-11-15

申请人： Lam Research Corporation

发明人： Alex Paterson ,  Harmeet Singh ,  Richard A. Marsh ,  Thorsten Lill ,  Vahid Vahedi ,  Ying Wu ,  Saravanapriyan Sriraman

IPC分类号： H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

摘要： The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid may have slots of a particular aspect ratio which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. The lower sub-chamber plasma has a lower electron density, lower effective electron temperature, and higher negative ion:positive ion ratio as compared to the upper sub-chamber plasma. The disclosed embodiments may result in an etching process having good center to edge uniformity, selectivity, profile angle, and Iso/Dense loading.

摘要翻译： 这里公开的实施例涉及用于蚀刻半导体衬底的改进的方法和设备。 等离子体栅格位于反应室中，以将室分成上部和下部子室。 等离子格栅可以具有特定纵横比的槽，其允许某些物质从上部子室穿过到下部子室。 在一些情况下，在上部子室中产生电子 - 离子等离子体。 使其通过栅格到下部子室的电子在它们通过时被冷却。 在某些情况下，这导致下部子室中的离子离子等离子体。 与上部小室等离子体相比，下部小室等离子体具有较低的电子密度，较低的有效电子温度和较高的负离子：正离子比。 所公开的实施例可以导致具有良好的中心到边缘均匀性，选择性，轮廓角和Iso / Dense加载的蚀刻工艺。

公开(公告)号：US20140217193A1

公开(公告)日：2014-08-07

申请号：US13760686

申请日：2013-02-06

申请人： NOVELLUS SYSTEMS, INC.

发明人： Patrick Breiling ,  Kevin Gerber ,  Jennifer O'Loughlin ,  Nagraj Shankar ,  Pramod Subramonium

IPC分类号： B05B1/00

CPC分类号： B05B1/005 ,  B05B1/18 ,  B05B7/22 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45591 ,  C23C16/50 ,  C30B25/14 ,  H01J37/3244 ,  H01J37/32633 ,  Y10T29/49826

摘要： A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.

摘要翻译： 衬底处理系统包括一个喷头，其包括头部和杆部分，并且将前体气体输送到处理室。 挡板包括具有大于喷头的头部的外径的外径的基部，其包括电介质材料，并且布置在喷头的头部和处理室的上表面之间。

公开(公告)号：US08790489B2

公开(公告)日：2014-07-29

申请号：US13175096

申请日：2011-07-01

申请人： Masanobu Honda ,  Kazuhiro Kubota ,  Yoshinobu Ooya ,  Masaru Nishino

发明人： Masanobu Honda ,  Kazuhiro Kubota ,  Yoshinobu Ooya ,  Masaru Nishino

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  H01J37/18 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/6719 ,  H01J37/18 ,  H01J37/32091 ,  H01J37/32633 ,  H01J37/32834 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.

摘要翻译： 基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体 所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触， 并且能够与排气板间隔开。

公开(公告)号：US20140130926A1

公开(公告)日：2014-05-15

申请号：US14162497

申请日：2014-01-23

申请人： Applied Materials, Inc.

发明人： Daniel J. HOFFMAN ,  Kallol BERA

IPC分类号： F15D1/00

CPC分类号： F15D1/0005 ,  C23C14/22 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.

摘要翻译： 公开了一种用于蚀刻装置的挡板组件。 挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。 加热组件可能存在于下框架部分内以控制挡板的温度。 挡板组件可以帮助将等离子体限制在腔室中的处理空间内。 环可以包括碳化硅，并且下挡板部分可以包括铝。

公开(公告)号：US20140060740A1

公开(公告)日：2014-03-06

申请号：US13653642

申请日：2012-10-17

申请人： CHANG GUNG UNIVERSITY

发明人： Chi-Hsien HUANG ,  Chao-Sung LAI ,  Chien CHOU ,  Chu-Fa CHAN

IPC分类号： H01L21/465

CPC分类号： H01J37/32091 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32633

摘要： The invention provides a plasma processing device, wherein the upper electrode and the lower electrode are in the vacuum chamber. The chip is placed in the lower electrode. The first plate is placed between the upper electrode and the lower electrode, and the first plate includes a plurality of first voids. The second plate is placed between the first plate and the lower electrode, and the second plate includes a plurality of second voids. The high frequency power is provided by the upper electrode and the lower electrode in the vacuum chamber, and the plasma is generated between the third plate and the upper electrode. The plasma is filtered by the third void, the first void, and the second void.

摘要翻译： 本发明提供了一种等离子体处理装置，其中上电极和下电极位于真空室中。 芯片放置在下电极中。 第一板放置在上电极和下电极之间，第一板包括多个第一空隙。 第二板被放置在第一板和下电极之间，第二板包括多个第二空隙。 高频功率由真空室中的上电极和下电极提供，并且在第三板和上电极之间产生等离子体。 等离子体被第三空隙，第一空隙和第二空隙过滤。

公开(公告)号：US20140053984A1

公开(公告)日：2014-02-27

申请号：US13689668

申请日：2012-11-29

申请人： Hyun Ho Doh ,  Junsic Hong ,  Paul Reichardt

发明人： Hyun Ho Doh ,  Junsic Hong ,  Paul Reichardt

IPC分类号： B05C9/00 ,  B05C13/00 ,  H05H1/24

CPC分类号： H01J37/32477 ,  C23C14/564 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32504 ,  H01J37/32559 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/022

摘要： Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber and a chamber liner. Modulating the azimuthal non-uniformity includes providing a set of conduction straps to connect the chamber liner to a ground ring whereby the number of conduction straps in the set of conduction straps is greater than 8. Alternatively or additionally, a mirror cut-out is provided for a counterpart existing cut-out or port in the chamber liner. Alternatively or additionally, a dummy structure is provided with the chamber liner for a counterpart structure that impedes at least one of a gas flow and RF return current in the chamber.

摘要翻译： 公开了用于调制等离子体处理室中的方位不均匀性的方法和装置。 装置包括具有等离子体处理室和室衬套的等离子体处理系统。 调制方位不均匀性包括提供一组导电带以将室衬套连接到接地环，由此导电带组中的导电带的数量大于8.或者另外还提供了一个反射镜切口 对于现有的切口或腔室内的口。 或者或另外，虚设结构设置有用于阻碍腔室中的气流和RF返回电流中的至少一个的对应结构的室衬套。