公开(公告)号：US09708179B2

公开(公告)日：2017-07-18

申请号：US14967663

申请日：2015-12-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yuan-Chih Hsieh ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

IPC分类号： H01L23/12 ,  B81B7/00 ,  B81C1/00 ,  H01L23/26 ,  H01L21/322

CPC分类号： B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： In some embodiments, the present disclosure relates to a MEMs (microelectromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

公开(公告)号：US20170194145A1

公开(公告)日：2017-07-06

申请号：US15237114

申请日：2016-08-15

申请人： International Business Machines Corporation

发明人： Karthik Balakrishnan ,  Lukas Czornomaz ,  Pouya Hashemi ,  Alexander Reznicek

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/322 ,  H01L21/84 ,  H01L21/311

CPC分类号： H01L21/02645 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/322 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203

摘要： After forming a seed layer over a first end of a sacrificial semiconductor layer composed of silicon germanium, a remaining portion of the sacrificial semiconductor layer is removed to provide a trench. Next, a semiconductor barrier layer is formed on a sidewall of the seed layer that is exposed by the trench. A III-V compound semiconductor layer is formed within the trench by a lateral epitaxial semiconductor regrowth process.

公开(公告)号：US09691632B2

公开(公告)日：2017-06-27

申请号：US14649114

申请日：2013-12-03

申请人： SILTRONIC AG ,  INTEL CORPORATION

发明人： Peter Storck ,  Norbert Werner ,  Martin Vorderwestner ,  Peter Tolchinsky ,  Irwin Yablok

IPC分类号： H01L21/322 ,  H01L29/167 ,  H01L21/02

CPC分类号： H01L21/3225 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/3221 ,  H01L29/167

摘要： An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×1016 atoms/cm3 or more and 1×1020 atoms/cm3 or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

公开(公告)号：US20170170028A1

公开(公告)日：2017-06-15

申请号：US15379243

申请日：2016-12-14

申请人： Infineon Technologies AG

发明人： Werner Schustereder ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Sandeep Walia

IPC分类号： H01L21/322 ,  H01L21/02 ,  H01L21/306 ,  H01L21/223

CPC分类号： H01L21/3225 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02598 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/30604

摘要： Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. The method further includes creating vacancies at least in the oxygen containing region and annealing at least the oxygen containing region in an annealing process so as to form oxygen precipitates.

公开(公告)号：US20170062561A1

公开(公告)日：2017-03-02

申请号：US14840904

申请日：2015-08-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Cheng-Yi PENG ,  Chih-Chieh YEH ,  Hung-Li CHIANG ,  Hung-Ming CHEN ,  Yee-Chia YEO

IPC分类号： H01L29/06 ,  H01L21/322

CPC分类号： H01L29/7853 ,  H01L21/322 ,  H01L21/324 ,  H01L21/823431 ,  H01L23/3171 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The fin structure includes a first surface and a second surface. The first surface is inclined to the second surface. The semiconductor device structure also includes a passivation layer covering the first surface and the second surface of the fin structure. The thickness of a first portion of the passivation layer covering the first surface is substantially the same as that of a second portion of the passivation layer covering the second surface.

摘要翻译： 提供半导体器件结构的结构和形成方法。 半导体器件结构包括在半导体衬底上的鳍结构。 翅片结构包括第一表面和第二表面。 第一表面倾斜于第二表面。 半导体器件结构还包括覆盖翅片结构的第一表面和第二表面的钝化层。 覆盖第一表面的钝化层的第一部分的厚度与覆盖第二表面的钝化层的第二部分的厚度基本相同。

公开(公告)号：US20170040209A1

公开(公告)日：2017-02-09

申请号：US15066177

申请日：2016-03-10

申请人： Samsung Electronics Co., Ltd.

发明人： Wei-E Wang ,  Mark Rodder ,  Borna Obradovic

IPC分类号： H01L21/762 ,  H01L21/322 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/306 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/3226

摘要： Methods of forming nanosheets for a semiconductor device are provided including providing a silicon on insulator (SOI) handle wafer, the SOT handle wafer including a silicon layer and a dielectric layer on the silicon layer; providing a first donor wafer; bonding the SOI handle wafer and the first donor wafer together to provide a bonded structure; debonding the bonded structure to provide an intermediate wafer including a plurality of silicon or non-silicon nano sheets and a plurality of dielectric layers alternately stacked; and bonding the intermediate wafer to a second donor wafer to provide a final wafer including a plurality of silicon or non-silicon layers and a plurality of dielectric layers alternately stacked, wherein the final wafer includes at least one more pair of silicon or non-silicon and dielectric layers than the intermediate wafer.

摘要翻译： 提供了形成半导体器件的纳米片的方法，包括提供绝缘体上硅（SOI）处理晶片，SOT处理晶片在硅层上包括硅层和介电层; 提供第一施主晶片; 将SOI处理晶片和第一施主晶片结合在一起以提供结合结构; 剥离粘合结构以提供包括交替层叠的多个硅或非硅纳米片和多个电介质层的中间晶片; 以及将所述中间晶片接合到第二施主晶片以提供包括交替层叠的多个硅或非硅层和多个电介质层的最终晶片，其中所述最终晶片包括至少一对硅或非硅 和电介质层比中间晶片。

公开(公告)号：US09530693B2

公开(公告)日：2016-12-27

申请号：US14677903

申请日：2015-04-02

申请人： SK hynix Inc.

发明人： Jong Il Kim

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/78 ,  H01L21/322 ,  H01L21/311 ,  H01L27/105 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/26513 ,  H01L21/28044 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/823418 ,  H01L21/823493 ,  H01L23/481 ,  H01L27/1052 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a dummy active region for metal ion gathering, which is capable of preventing device failure due to metal ion contamination, and a method of fabricating the same are provided. The semiconductor device includes active regions defined by an isolation layer in a semiconductor substrate and ion-implanted with an impurity, and a dummy active region ion-implanted with an impurity having a concentration higher than that of the impurity in the active region and configured to gather metal ions.

公开(公告)号：US20160372473A1

公开(公告)日：2016-12-22

申请号：US15158073

申请日：2016-05-18

申请人： International Business Machines Corporation

发明人： Kangguo Cheng ,  Ryan O. Jung ,  Fee Li Lie ,  Eric R. Miller ,  John R. Sporre ,  Sean Teehan

IPC分类号： H01L27/092 ,  H01L21/308 ,  H01L29/78 ,  H01L29/161 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/322

CPC分类号： H01L27/0924 ,  H01L21/3081 ,  H01L21/3221 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A silicon fin precursor is formed in an nFET device region and a fin stack comprising alternating material portions, and from bottom to top, of silicon and a silicon germanium alloy is formed in a pFET device region. A thermal anneal is then used to convert the fin stack into a silicon germanium alloy fin precursor. A thermal oxidation process follows that converts the silicon fin precursor into a silicon fin and the silicon germanium alloy fin precursor into a silicon germanium alloy fin. Functional gate structures can be formed straddling over each of the various fins.

摘要翻译： 在nFET器件区域中形成硅鳍前体，并且在pFET器件区域中形成包括硅的交替材料部分以及从底部到顶部的硅和硅锗合金的鳍片堆叠。 然后使用热退火将翅片叠层转换成硅锗合金翅片前体。 热氧化工艺之后，将硅翅片前体转化成硅翅片，将硅锗合金翅片前体转化成硅锗合金翅片。 功能门结构可跨越各个翅片跨越形成。

公开(公告)号：US09517530B2

公开(公告)日：2016-12-13

申请号：US14988310

申请日：2016-01-05

申请人： DISCO CORPORATION

发明人： Kazuya Hirata ,  Kunimitsu Takahashi ,  Yoko Nishino

IPC分类号： H01L21/30 ,  H01L21/322 ,  B23K26/00 ,  B28D5/00

CPC分类号： B23K26/0057 ,  B23K26/0006 ,  B23K26/53 ,  B23K2103/56 ,  B28D5/0011 ,  H01L21/30 ,  H01L21/322

摘要： A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. A separation start point is formed by setting a focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and form cracks extending from the modified layer along a c-plane, thus forming a separation start point. The focal point is indexed by relatively moving the focal point in the direction where an off angle is formed and the c-plane is inclined downward.

摘要翻译： 六角形单晶晶片由六方晶单晶锭制成。 通过将晶锭内部的激光束的焦点从锭的上表面设定在规定的深度，形成分离起始点，该深度对应于待制造的晶片的厚度，接下来将激光束施加到 铸锭的上表面，同时相对移动焦点和锭，从而形成平行于锭的上表面的改性层，并形成沿着c平面从修饰层延伸的裂纹，从而形成分离开始点。 通过在形成偏角的方向上相对移动焦点并且c平面向下倾斜来指向焦点。

公开(公告)号：US09511998B2

公开(公告)日：2016-12-06

申请号：US14207752

申请日：2014-03-13

申请人： Robert Bosch GmbH

发明人： Ashwin Samarao ,  Gary O'Brien ,  Ando Feyh ,  Gary Yama ,  Andrew Graham ,  Bongsang Kim ,  Fabian Purkl

IPC分类号： H01L21/322 ,  B81C1/00 ,  H01L23/28

CPC分类号： B81C1/00285 ,  B81C2201/0115 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/3223 ,  H01L21/3225 ,  H01L23/28

摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

摘要翻译： 微机电系统（MEMS）装置包括高密度吸气剂。 高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。 硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。 高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。