公开(公告)号：US4976393A

公开(公告)日：1990-12-11

申请号：US134458

申请日：1987-12-17

申请人： Makoto Nakajima ,  Yoshio Ohashi ,  Toshio Chuma ,  Kazuo Hatori ,  Isao Araki ,  Masahiro Koizumi ,  Jin Onuki ,  Hitoshi Suzuki ,  Susumu Okikawa

发明人： Makoto Nakajima ,  Yoshio Ohashi ,  Toshio Chuma ,  Kazuo Hatori ,  Isao Araki ,  Masahiro Koizumi ,  Jin Onuki ,  Hitoshi Suzuki ,  Susumu Okikawa

IPC分类号： B23K20/00 ,  H01L21/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/3025

摘要： The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor.In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.

公开(公告)号：US07141741B2

公开(公告)日：2006-11-28

申请号：US10665523

申请日：2003-09-22

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K1/03

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。 散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。 端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。 散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。 半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US5956231A

公开(公告)日：1999-09-21

申请号：US539075

申请日：1995-10-04

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H01L23/049 ,  H01L23/495 ,  H01L25/065 ,  H02M7/00 ,  H05K7/02 ,  H05K7/04

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H02M7/003 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US5153704A

公开(公告)日：1992-10-06

申请号：US818457

申请日：1992-01-03

申请人： Jin Onuki ,  Masateru Suwa ,  Masahiro Koizumi ,  Tomio Iizuka ,  Takeo Tamamura

发明人： Jin Onuki ,  Masateru Suwa ,  Masahiro Koizumi ,  Tomio Iizuka ,  Takeo Tamamura

IPC分类号： B23K20/00 ,  H01L21/48 ,  H01L21/60 ,  H01L21/607 ,  H01L23/31 ,  H01L23/49 ,  H01L23/495

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45166 ,  H01L2224/45169 ,  H01L2224/4517 ,  H01L2224/4518 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48655 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48799 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L24/73 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  Y10T428/12431

摘要： A resin encapsulated semiconductor device comprises a semiconductor element, a conductive base, a wire of aluminum connecting the element and the base, and a thermosetting resin encapsulating hermetically the component to protect the device from a mechanical stress and ambient atmosphere.

摘要翻译： 树脂封装的半导体器件包括半导体元件，导电基底，连接元件和基底的铝线，以及密封该元件的热固性树脂，以保护器件免受机械应力和环境气氛的影响。

公开(公告)号：US4965656A

公开(公告)日：1990-10-23

申请号：US314246

申请日：1989-02-21

申请人： Yasushi Koubuchi ,  Jin Onuki ,  Masahiro Koizumi

发明人： Yasushi Koubuchi ,  Jin Onuki ,  Masahiro Koizumi

IPC分类号： H01L21/768 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45

CPC分类号： H01L29/456 ,  H01L23/53223 ,  H01L2924/0002

摘要： This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.

摘要翻译： 本发明提供了一种通过扩散阻挡层的介质在半导体衬底上具有电极导体层的半导体器件，该半导体器件包括由具有比半导体器件的热处理温度更高的结晶温度的非晶材料形成的扩散阻挡层。 根据本发明，可以防止金属导体与半导体衬底之间的反应以及导体材料向半导体衬底的扩散，从而可获得具有高热可靠性的半导体器件。

公开(公告)号：US4912544A

公开(公告)日：1990-03-27

申请号：US521899

申请日：1983-08-10

申请人： Jin Onuki ,  Masateru Suwa ,  Masahiro Koizumi ,  Osamu Asai ,  Katsumi Suzuki ,  Ryo Hiraga

发明人： Jin Onuki ,  Masateru Suwa ,  Masahiro Koizumi ,  Osamu Asai ,  Katsumi Suzuki ,  Ryo Hiraga

IPC分类号： H01L23/52 ,  C22C21/00 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/31 ,  H01L23/49

CPC分类号： C22C21/00 ,  H01L23/3107 ,  H01L23/3135 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/92247 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759

摘要： A corrosion-resistant aluminum electronic material comprising an alloy containing aluminum as the principal component and, in addition, a small amount of a noble metal, the content of said noble metal being equal to or less than that at the eutectic point having the primary crystal of aluminum. As the noble metal, there is contained at least one metal selected from Pt, Pd, Rh, Ir, Os, Ru, Au and Ag. Said electronic material is used for ball-bonding wire and distributing film in a semiconductor device, and the like.

摘要翻译： 一种耐腐蚀铝电子材料，其包含以铝为主要成分的合金，另外，少量贵金属，所述贵金属的含量等于或低于具有初晶的共晶点的含量 的铝。 作为贵金属，含有选自Pt，Pd，Rh，Ir，Os，Ru，Au和Ag中的至少一种金属。 所述电子材料用于半导体器件中的球焊线和分配膜等。

公开(公告)号：US5175608A

公开(公告)日：1992-12-29

申请号：US574770

申请日：1990-08-30

申请人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

发明人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/768

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/35 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01J37/3444 ,  H01L21/76843 ,  Y10S257/915 ,  Y10T428/1234 ,  Y10T428/12528 ,  Y10T428/12639 ,  Y10T428/12674

摘要： A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible. Also, a barrier layer having a layered structure of granular and columnar crystals or a mixed structure thereof providing an efficient barrier effect and a large specific resistance is possible.

摘要翻译： 一种薄膜形成方法和装置，其中负电压交替地施加到靶和基底以进行成膜和交替地反向溅射。 此外，线圈安装在靶和衬底之间，并且使高频电流流过其中以产生等离子体。 绝对值小于溅射时的负基极电压可以施加到衬底上，以使Ar离子在进行反溅射的同时流入衬底。 因此，台阶覆盖度为0.3以上的电影是可能的。 也可以在高真空区域保持稳定的放电并进行反向溅射。 Ar气氛的压力可以降低到10-3乇或更低。 在（111）面的x射线衍射强度的峰值为150Kcps以上的铝配线膜是可能的。 此外，具有粒状和柱状晶体的层叠结构的阻挡层或其提供有效的屏障效应和大电阻率的混合结构是可能的。

公开(公告)号：US06225598B1

公开(公告)日：2001-05-01

申请号：US09112210

申请日：1998-07-09

申请人： Masayasu Nihei ,  Jin Onuki ,  Takao Funamoto ,  Izumi Sakurai ,  Akira Onuma

发明人： Masayasu Nihei ,  Jin Onuki ,  Takao Funamoto ,  Izumi Sakurai ,  Akira Onuma

IPC分类号： B23K909

CPC分类号： B23K9/092

摘要： In a method for high frequency pulse welding and an apparatus therefor, a highly directive arc can be obtained by eliminating the effect of the inductance of the welding cable, which tends to make the high frequency electromagnetic pinch force large. In a method and an apparatus for high frequency pulse arc welding which is performed by generating an arc between an inconsumable electrode or a consumable electrode arranged near a portion of a base metal to be welded and the base metal with main pulse current, when the main pulse current is shifted from ON to OFF, a reverse pulse current having a polarity opposite to the polarity of the main pulse is supplied between the electrode and the base metal to improve the stiffness (directivity) of the arc by making the rising and falling edges of the pulses steeper. A rail-car and a nuclear power plant obtained by the method are also provided.

摘要翻译： 在高频脉冲焊接的方法及其装置中，通过消除焊接电缆的电感的影响，可以获得高度指示的电弧，这倾向于使高频电磁夹紧力变大。 在高频脉冲电弧焊接方法和装置中，通过在被焊接的贱金属部分附近设置的不可蚀电极或可消耗电极与主脉冲电流的母材之间产生电弧来进行， 脉冲电流从ON变为OFF，在电极和母材之间提供具有与主脉冲极性相反极性的反向脉冲电流，通过使上升沿和下降沿提高电弧的刚度（方向性） 的脉冲更陡。 还提供了通过该方法获得的轨道车和核电站。

公开(公告)号：US5539244A

公开(公告)日：1996-07-23

申请号：US205387

申请日：1994-03-04

申请人： Mutsuhiro Mori ,  Yasumichi Yasuda ,  Hiroyuki Ozawa ,  Jin Onuki

发明人： Mutsuhiro Mori ,  Yasumichi Yasuda ,  Hiroyuki Ozawa ,  Jin Onuki

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L29/739 ,  H01L29/78 ,  H01L23/48 ,  H01L29/43

CPC分类号： H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L29/7395 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/49107 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19043

摘要： A first power semiconductor device with a semiconductor base to which an emitter wire electrode is connected through an emitter bonding pad and a gate wire electrode is connected through a gate bonding pad, wherein the gate bonding pad comprises a silicon oxide film, a silicon crystal layer and a gate wiring electrode made of aluminum containing silicon which are successively formed on the semiconductor base, and the gate wire electrode is connected to the gate wiring electrode. A second power semiconductor device wherein the emitter bonding pad is an emitter wiring electrode made of aluminum containing silicon which is directly formed on the semiconductor base, and the emitter wire electrode is bonded to the emitter wiring electrode.

摘要翻译： 具有通过发射极接合焊盘和栅极线电极连接发射极线电极的半导体基底的第一功率半导体器件通过栅极焊盘连接，其中栅极焊盘包括氧化硅膜，硅晶体层 以及由半导体基底上依次形成的含有硅的铝构成的栅极布线电极，栅极线电极与栅极布线电极连接。 一种第二功率半导体器件，其中所述发射极接合焊盘是直接形成在所述半导体基底上的由含铝的铝制成的发射极布线电极，并且所述发射极线电极接合到所述发射极布线电极。