公开(公告)号：US20090197114A1

公开(公告)日：2009-08-06

申请号：US12254790

申请日：2008-10-20

申请人： Da-Yuan Shih ,  Donald W. Henderson ,  Sung K. Kang ,  Minhua Lu ,  Jae-Woong Nah ,  Kamalesh Srivastava

发明人： Da-Yuan Shih ,  Donald W. Henderson ,  Sung K. Kang ,  Minhua Lu ,  Jae-Woong Nah ,  Kamalesh Srivastava

IPC分类号： B32B15/01 ,  B23K1/20

CPC分类号： B23K1/008 ,  B23K1/0016 ,  B23K1/203 ,  B23K2101/42 ,  C22C13/00 ,  H01L2224/16225 ,  H05K3/3463 ,  Y10T428/12708 ,  Y10T428/12715

摘要： A solder joint comprising a solder capture pad on a substrate having a circuit; and a lead free solder selected from the group comprising Sn—Ag—Cu solder and Sn—Ag solder adhered to the solder capture pad; the solder selected from the group comprising between 0.1 to 2.0% by weight Sb or Bi, and 0.5 to 3.0% Ag. Formation of voids at an interface between the solder and the solder capture pad is suppressed, by including Zn. Interlayer dielectric delamination is suppressed, and electromigration characteristics are greatly improved. Methods for forming solder joints using the solders.

公开(公告)号：US20090197103A1

公开(公告)日：2009-08-06

申请号：US12254768

申请日：2008-10-20

申请人： Da-Yuan Shih ,  Donald W. Henderson ,  Sung K. Kang ,  Minhua Lu ,  Jae-Woong Nah ,  Kamalesh Srivastava

发明人： Da-Yuan Shih ,  Donald W. Henderson ,  Sung K. Kang ,  Minhua Lu ,  Jae-Woong Nah ,  Kamalesh Srivastava

IPC分类号： B32B15/04 ,  B23K1/20 ,  C22C13/00

CPC分类号： B23K1/0016 ,  B23K1/008 ,  B23K1/203 ,  B23K2101/42 ,  C22C13/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05613 ,  H01L2224/05618 ,  H01L2224/0562 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11003 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/13111 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/81191 ,  H01L2224/81395 ,  H01L2224/81411 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/14 ,  H01L2924/35121 ,  H01L2924/3656 ,  H05K3/3463 ,  Y10T428/31678 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2924/01051 ,  H01L2924/00

摘要： A solder joint comprising a solder capture pad on a substrate having a circuit; and a lead free solder selected from the group comprising Sn—Ag—Cu solder and Sn—Ag solder adhered to the solder capture pad; the solder selected from the group comprising between 0.1 to 2.0% by weight Sb or Bi, and 0.5 to 3.0% Ag. Formation of voids at an interface between the solder and the solder capture pad is suppressed, by including Zn. Interlayer dielectric delamination is suppressed, and electromigration characteristics are greatly improved. Methods for forming solder joints using the solders.

摘要翻译： 一种焊接接头，包括在具有电路的基板上的焊料捕获垫; 以及选自Sn-Ag-Cu焊料和Sn-Ag焊料的焊料的无铅焊料粘附到焊料捕获垫上; 选自包含0.1至2.0重量％的Sb或Bi和0.5至3.0％Ag的组的焊料。 焊料和焊料捕捉垫之间的界面上的空隙形成通过包含Zn而被抑制。 层间电介质分层被抑制，电迁移特性大大提高。 使用焊料形成焊点的方法。

公开(公告)号：US20150147846A1

公开(公告)日：2015-05-28

申请号：US14525069

申请日：2014-10-27

申请人： Claudius FEGER ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius FEGER ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/00 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises chip soldering structures on a semiconductor chip and substrate soldering structures on a substrate corresponding to the chip soldering structures. The substrate soldering structures extend toward the chip soldering structures for forming solder connections with the chip soldering structures. The chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the chip and the substrate to one another

摘要翻译： 预组装半导体器件包括半导体芯片上的芯片焊接结构和对应于芯片焊接结构的衬底上的衬底焊接结构。 衬底焊接结构朝着芯片焊接结构延伸，以形成与芯片焊接结构的焊接连接。 芯片和衬底相对于彼此处于预组装位置。 基板焊接结构的高度大于芯片焊接结构的高度。 预先施加的底部填充物与基底相邻并且足够厚以便基本上不超过基底焊接结构的全高度延伸。 在另一个实施例中，芯片焊接结构的高度大于衬底焊接结构的高度，并且预先施加的底部填充物与半导体芯片邻接并且足够厚以便基本上不超过芯片焊接的全部高度 结构。 一种方法包括通过将芯片和衬底彼此焊接来从这些器件制造半导体组件

公开(公告)号：US08268719B2

公开(公告)日：2012-09-18

申请号：US12983292

申请日：2011-01-01

申请人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2224/1131 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/14 ,  Y10T29/49149 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： A process for aligning at least two layers in an abutting relationship with each other comprises forming a plurality of sprocket openings in each of the layers for receiving a sprocket of diminishing diameters as the sprocket extends outwardly from a base, with the center axes of the sprocket openings in each layer being substantially alignable with one another, the diameter of the sprocket openings in an abutting layer for first receiving the sprocket being greater than the diameter of the sprocket openings in an abutted layer. This is followed by forming a plurality of reservoir openings in each of at least two of the layers and positioning the sprocket openings in the layers to correspond with one another and the reservoir openings in the layers to correspond with one another so that substantial alignment of the center axes of the corresponding sprocket openings in the layers effects substantial alignment of the center axes of the corresponding reservoir openings in the layers. Engaging the sprocket openings with the sprocket by inserting the end of the sprocket having the smallest diameter into the sprocket openings having the largest diameter in the layers and continuing through to the sprocket opening having the smallest diameter in the layers effects substantial alignment of the center axes of the corresponding sprocket openings and substantial alignment of the center axes of the corresponding reservoir openings in the layers. The invention also comprises apparatus for performing this process.

摘要翻译： 用于将至少两个彼此邻接的层对准的方法包括在每个层中形成多个链轮开口，用于当链轮从基座向外延伸时接收链轮直径减小的链轮，链轮的中心轴线 每个层中的开口基本上彼此对准，用于首先接收链轮的邻接层中的链轮开口的直径大于邻接层中链轮开口的直径。 随后在至少两个层中的每一个中形成多个储存器开口，并且将链轮开口定位在层中以彼此对应并且层中的储存器开口彼此对应，使得 层中对应的链轮开口的中心轴线对层中对应的储存器开口的中心轴进行实质上的对准。 通过将具有最小直径的链轮的端部插入到具有最大直径的链轮的链轮开口中并且连续到具有最小直径的链轮开口，使链轮开口与链轮接合，使得中心轴线 的对应的链轮开口和相应的储存器开口的中心轴线在层中的基本对准。 本发明还包括用于执行该过程的装置。

公开(公告)号：US20090181223A1

公开(公告)日：2009-07-16

申请号：US12015447

申请日：2008-01-16

申请人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： B23K31/02 ,  B32B3/10

CPC分类号： B23K1/0016 ,  B23K1/19 ,  B23K35/262 ,  B23K35/3013 ,  B23K2101/36 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2924/01322 ,  Y10T428/24826 ,  Y10T428/24942 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor solder bump structure having a solder bump with at least a first solder and a second solder attached to the first solder, producing one solder bump having at least two different solders with different melting temperatures. A method of fabricating the solder is included.

摘要翻译： 一种半导体焊料凸块结构，具有至少具有第一焊料的焊料凸块和附着到第一焊料的第二焊料，产生具有不同熔融温度的至少两种不同焊料的一个焊料凸块。 包括制造焊料的方法。

公开(公告)号：US20090093111A1

公开(公告)日：2009-04-09

申请号：US11869573

申请日：2007-10-09

申请人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Stephen L. Buchwalter ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L21/44 ,  B23K1/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2224/1131 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/14 ,  Y10T29/49149 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： A process for aligning at least two layers in an abutting relationship with each other comprises forming a plurality of sprocket openings in each of the layers for receiving a sprocket of diminishing diameters as the sprocket extends outwardly from a base, with the center axes of the sprocket openings in each layer being substantially alignable with one another, the diameter of the sprocket openings in an abutting layer for first receiving the sprocket being greater than the diameter of the sprocket openings in an abutted layer. This is followed by forming a plurality of reservoir openings in each of at least two of the layers and positioning the sprocket openings in the layers to correspond with one another and the reservoir openings in the layers to correspond with one another so that substantial alignment of the center axes of the corresponding sprocket openings in the layers effects substantial alignment of the center axes of the corresponding reservoir openings in the layers. Engaging the sprocket openings with the sprocket by inserting the end of the sprocket having the smallest diameter into the sprocket openings having the largest diameter in the layers and continuing through to the sprocket opening having the smallest diameter in the layers effects substantial alignment of the center axes of the corresponding sprocket openings and substantial alignment of the center axes of the corresponding reservoir openings in the layers. The invention also comprises apparatus-for performing this process.

摘要翻译： 用于将至少两个彼此邻接的层对准的方法包括在每个层中形成多个链轮开口，用于当链轮从基座向外延伸时接收链轮直径减小的链轮，链轮的中心轴线 每个层中的开口基本上彼此对准，用于首先接收链轮的邻接层中的链轮开口的直径大于邻接层中链轮开口的直径。 随后在至少两个层中的每一个中形成多个储存器开口，并且将链轮开口定位在层中以彼此对应并且层中的储存器开口彼此对应，使得 层中对应的链轮开口的中心轴线对层中对应的储存器开口的中心轴进行实质上的对准。 通过将具有最小直径的链轮的端部插入到具有最大直径的链轮的链轮开口中并且连续到具有最小直径的链轮开口，使链轮开口与链轮接合，使得中心轴线 的对应的链轮开口和相应的储存器开口的中心轴线在层中的基本对准。 本发明还包括用于执行该过程的装置。

公开(公告)号：US20080251281A1

公开(公告)日：2008-10-16

申请号：US11733840

申请日：2007-04-11

申请人： Stephen Leslie Buchwalter ,  Bruce K. Furman ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Stephen Leslie Buchwalter ,  Bruce K. Furman ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H05K1/03 ,  H01K3/10

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L24/28 ,  H01L24/31 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/68377 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11822 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3436 ,  H05K2201/0379 ,  H05K2201/094 ,  H05K2201/10234 ,  H05K2201/10242 ,  H05K2201/10977 ,  Y02P70/613 ,  Y10T29/49165 ,  H01L2224/45111 ,  H01L2924/01047 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： An electrical structure and method of forming. The electrical structure includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

摘要翻译： 一种电气结构和成型方法。 电结构包括第一衬底，其包括第一导电焊盘，第二衬底，其包括第二导电焊盘，以及将第一导电焊盘电连接和机械连接到第二导电焊盘的互连结构。 互连结构包括非焊料金属芯结构，第一焊料结构和第二焊料结构。 第一焊料结构将非焊料金属芯结构的第一部分电连接并机械地连接到第一导电焊盘。 第二焊料结构将非焊料金属芯结构的第二部分电连接并机械连接到第二导电焊盘。

公开(公告)号：US09343423B2

公开(公告)日：2016-05-17

申请号：US14526268

申请日：2014-10-28

申请人： Claudius Ferger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius Ferger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L21/463 ,  H01L23/544

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises chip soldering structures on a semiconductor chip and substrate soldering structures on a substrate corresponding to the chip soldering structures. The substrate soldering structures extend toward the chip soldering structures for forming solder connections with the chip soldering structures. The chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the chip and the substrate to one another.

摘要翻译： 预组装半导体器件包括半导体芯片上的芯片焊接结构和对应于芯片焊接结构的衬底上的衬底焊接结构。 衬底焊接结构朝着芯片焊接结构延伸，以形成与芯片焊接结构的焊接连接。 芯片和衬底相对于彼此处于预组装位置。 基板焊接结构的高度大于芯片焊接结构的高度。 预先施加的底部填充物与基底相邻并且足够厚以便基本上不超过基底焊接结构的全高度延伸。 在另一个实施例中，芯片焊接结构的高度大于衬底焊接结构的高度，并且预先施加的底部填充物与半导体芯片邻接并且足够厚以便基本上不超过芯片焊接的全部高度 结构。 一种方法包括通过将芯片和衬底彼此焊接来从这些器件制造半导体组件。

公开(公告)号：US20150147851A1

公开(公告)日：2015-05-28

申请号：US14526268

申请日：2014-10-28

申请人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/00 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises chip soldering structures on a semiconductor chip and substrate soldering structures on a substrate corresponding to the chip soldering structures. The substrate soldering structures extend toward the chip soldering structures for forming solder connections with the chip soldering structures. The chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the chip and the substrate to one another

公开(公告)号：US08963340B2

公开(公告)日：2015-02-24

申请号：US13231594

申请日：2011-09-13

申请人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L27/146 ,  H01L23/498 ,  H01L21/56 ,  H01L23/544 ,  H01L23/00

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises substrate soldering structures extending toward chip soldering structures for forming solder connections with the chip soldering structures, i.e., the chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the semiconductor chip and the substrate to one another.

摘要翻译： 预组装半导体器件包括朝向芯片焊接结构延伸的衬底焊接结构，用于形成与芯片焊接结构的焊接连接，即，芯片和衬底相对于彼此处于预组装位置。 基板焊接结构的高度大于芯片焊接结构的高度。 预先施加的底部填充物与基底相邻并且足够厚以便基本上不超过基底焊接结构的全高度延伸。 在另一个实施例中，芯片焊接结构的高度大于衬底焊接结构的高度，并且预先施加的底部填充物与半导体芯片邻接并且足够厚以便基本上不超过芯片焊接的全部高度 结构。 一种方法包括通过将半导体芯片和衬底相互焊接来从这些器件制造半导体组件。