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公开(公告)号：US08247911B2
公开(公告)日：2012-08-21
申请号：US12445789
申请日：2008-01-15
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/78 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/43821 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , H01L2924/01001 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/00015 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要： Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.
摘要翻译： 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度 ，具有较高的工业生产率。 主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。 浓缩层形成在球接合部分附近或其界面处。 导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍 导电金属在浓缩层以外的球接合部分的浓度。
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公开(公告)号：US20110011619A1
公开(公告)日：2011-01-20
申请号：US12669612
申请日：2008-12-03
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01B5/00
CPC分类号： C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.
摘要翻译： 本发明的目的是提供一种可以减少颈部损伤的高功能性接合线，线圈线性良好，线圈高度稳定性和接合线的接合形状的稳定性，能够应付 半导体封装技术，如低循环，变薄，实现细间距，以及三维封装。 半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。 在表皮层表面的长度方向的结晶取向中的<100>取向的百分比大于或等于50％。
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公开(公告)号：US20090115059A1
公开(公告)日：2009-05-07
申请号：US12294416
申请日：2007-03-23
IPC分类号： H01L23/49
CPC分类号： C22C5/02 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/48247 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/85205 , H01L2224/85206 , H01L2224/85439 , H01L2924/00011 , H01L2924/01003 , H01L2924/01011 , H01L2924/01014 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/01067 , H01L2924/0107 , H01L2924/01072 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01202 , H01L2924/01205 , H01L2924/01327 , H01L2924/10253 , H01L2924/20752 , H01L2924/01024 , H01L2924/01004 , H01L2924/0106 , H01L2924/01062 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/20751 , H01L2924/00015 , H01L2924/00013 , H01L2924/01006
摘要： A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.
摘要翻译： 用于半导体元件连接的金线具有高强度和粘合性。 该连接具有限定量的至少一种选自钙和稀土元素的元素，以及有限量的至少一种选自钛，钒，铬，铪，铌，钨和锆的元素。 优选并入适量的钯或铍。 钙和稀土元素的结合可以提高金丝的强度和杨氏模量，并且钛等的结合可以减少在第一次接合中压接球的压接形状的圆度的劣化 通过掺入钙和稀土元素。 接合线可以同时实现能够满足半导体尺寸减小和电极垫间距减小的机械性能和粘合性。
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公开(公告)号：US08610291B2
公开(公告)日：2013-12-17
申请号：US11848403
申请日：2007-08-31
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
CPC分类号： H01L24/85 , B23K35/302 , B23K2103/12 , C22C9/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/05639 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45647 , H01L2224/45663 , H01L2224/45687 , H01L2224/45693 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/10253 , H01L2924/20752 , H01L2924/20755 , H01L2924/20756 , H01L2924/01008 , H01L2924/01004 , H01L2924/01013 , H01L2924/01025 , H01L2924/01039 , H01L2924/00015 , H01L2924/00 , H01L2924/013 , H01L2924/00014 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01055 , H01L2924/00013
摘要： The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.
摘要翻译： 本发明提供了一种廉价的材料成本的半导体器件铜合金接合线，确保了优异的球接合形状，线接合特性等，并且具有良好的环形成特性，并且具有优异的批量生产率。 半导体装置铜合金接合线含有总共10〜700质量ppm的Mg和P中的至少一种，氧在6〜30质量ppm的范围内。
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公开(公告)号：US08389860B2
公开(公告)日：2013-03-05
申请号：US12669612
申请日：2008-12-03
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
CPC分类号： C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.
摘要翻译： 用于半导体器件的接合线包括由导电金属形成的芯部件和主要由不同于芯部件的面心立方金属形成在其上的表皮层。 在皮肤层表面的晶面处的线长度方向上的取向<100 <方向<100>的取向比大于或等于50％，并且<100>取向具有相对的角度差 到电线长度方向。 角度差在15度以内。
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公开(公告)号：US20120104613A1
公开(公告)日：2012-05-03
申请号：US13349155
申请日：2012-01-12
IPC分类号： H01L23/532
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
摘要翻译： 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。
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公开(公告)号：US08004094B2
公开(公告)日：2011-08-23
申请号：US12892122
申请日：2010-09-28
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01L21/00
CPC分类号： H01L24/85 , B23K35/302 , B23K2103/12 , C22C9/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/05639 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45647 , H01L2224/45663 , H01L2224/45687 , H01L2224/45693 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/10253 , H01L2924/20752 , H01L2924/20755 , H01L2924/20756 , H01L2924/01008 , H01L2924/01004 , H01L2924/01013 , H01L2924/01025 , H01L2924/01039 , H01L2924/00015 , H01L2924/00 , H01L2924/013 , H01L2924/00014 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01055 , H01L2924/00013
摘要： The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.
摘要翻译： 本发明提供了一种廉价的材料成本的半导体器件铜合金接合线，确保了优异的球接合形状，线接合特性等，并且具有良好的环形成特性，并且具有优异的批量生产率。 半导体装置铜合金接合线含有总共10〜700质量ppm的Mg和P中的至少一种，氧在6〜30质量ppm的范围内。
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公开(公告)号：US09112059B2
公开(公告)日：2015-08-18
申请号：US13349155
申请日：2012-01-12
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
摘要翻译： 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。
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公开(公告)号：US08102061B2
公开(公告)日：2012-01-24
申请号：US12670253
申请日：2008-07-24
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
摘要翻译： 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。
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公开(公告)号：US07952028B2
公开(公告)日：2011-05-31
申请号：US12747434
申请日：2009-01-20
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01R4/62
CPC分类号： C22C5/02 , B21C37/047 , B23K35/0261 , B23K35/0272 , B23K35/24 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C22F1/08 , C22F1/14 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/4849 , H01L2224/4851 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2225/06562 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01L2924/01004 , H01L2924/01203 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/01204 , H01L2924/01202 , H01L2224/48465 , H01L2924/20751 , H01L2924/01001 , H01L2924/20655 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20656 , H01L2924/00 , H01L2224/48824 , H01L2924/00014 , H01L2924/013 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2075 , H01L2924/20754
摘要： A high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b≦0.7.
摘要翻译： 适用于半球安装技术的高性能接合线，例如堆叠芯片接合，变薄和细间距安装，其中可以抑制在球和弹簧故障的直立位置处的钢丝倾斜（倾斜）并且循环线性和 回路高度稳定性非常好。 这种半导体器件用接合线包括由导电性金属构成的芯材以及形成在芯材上并含有以芯材为主要成分的金属的表层， 其中，沿着线周向的线表面上的表层中的晶粒的平均尺寸（a）与正常截面上的芯材中的晶粒的平均尺寸（b）之间的关系，正交截面 作为与线轴垂直的横截面，满足a / b＆nlE的不等式; 0.7。
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