公开(公告)号：US20160155724A1

公开(公告)日：2016-06-02

申请号：US14955124

申请日：2015-12-01

申请人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

发明人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L22/32 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03616 ,  H01L2224/0392 ,  H01L2224/04 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08146 ,  H01L2224/09181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14515 ,  H01L2224/16146 ,  H01L2224/73251 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80907 ,  H01L2224/92 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06596 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/08 ,  H01L2224/16 ,  H01L2924/00012 ,  H01L22/00 ,  H01L21/304 ,  H01L2221/68304 ,  H01L2221/68381 ,  H01L21/78

摘要： Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.

摘要翻译： 提供具有堆叠结构的半导体器件及其制造方法。 半导体器件包括至少一个单块，其包括堆叠在其上的第一半导体芯片和第二半导体芯片。 第一和第二半导体芯片中的每一个包括半导体衬底，该半导体衬底包括通孔，半导体衬底的前表面上的电路层和设置在电路层中并且与通孔电连接的前衬垫 。 半导体基板的表面彼此面对。 电路层彼此直接接触，使得半导体芯片彼此结合。

公开(公告)号：US09852965B2

公开(公告)日：2017-12-26

申请号：US15204632

申请日：2016-07-07

申请人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

发明人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2924/181 ,  H01L2924/00012

摘要： Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.

公开(公告)号：US09653430B2

公开(公告)日：2017-05-16

申请号：US14955124

申请日：2015-12-01

申请人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

发明人： Taeyeong Kim ,  Byung Lyul Park ,  Seokho Kim ,  Pil-Kyu Kang ,  Hyoju Kim ,  Jin Ho An ,  Joo Hee Jang

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L23/31 ,  H01L21/683 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L22/32 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03616 ,  H01L2224/0392 ,  H01L2224/04 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08146 ,  H01L2224/09181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14515 ,  H01L2224/16146 ,  H01L2224/73251 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80907 ,  H01L2224/92 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06596 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/08 ,  H01L2224/16 ,  H01L2924/00012 ,  H01L22/00 ,  H01L21/304 ,  H01L2221/68304 ,  H01L2221/68381 ,  H01L21/78

摘要： Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.

公开(公告)号：US08963336B2

公开(公告)日：2015-02-24

申请号：US14333509

申请日：2014-07-16

申请人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

发明人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

IPC分类号： H01L29/40 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

摘要翻译： 半导体器件包括：基板，包括彼此相对的第一表面和第二表面;延伸穿过基板的通孔电极。 通孔电极具有互连金属层和围绕互连金属层的侧表面的阻挡金属层。 通孔电极的一端在第二表面上方突出。 间隔绝缘层可以设置在通孔电极的外侧壁上。 通孔电极焊盘连接到通孔电极并且在基本平行于第二表面的间隔绝缘层上延伸。 在第二表面上层叠第一氧化硅层和氮化硅层。 第一氧化硅层的厚度大于氮化硅层的厚度。

公开(公告)号：US20160086874A1

公开(公告)日：2016-03-24

申请号：US14858572

申请日：2015-09-18

申请人： Ju-Il Choi ,  Kwang-Jin Moon ,  Byung-Lyul Park ,  Jin-Ho An ,  Atsushi Fujisaki

发明人： Ju-Il Choi ,  Kwang-Jin Moon ,  Byung-Lyul Park ,  Jin-Ho An ,  Atsushi Fujisaki

IPC分类号： H01L23/48 ,  H01L23/532 ,  H01L23/528 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05546 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16013 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01047

摘要： A semiconductor device can include a substrate that has a surface. A via structure can extend through the substrate toward the surface of the substrate, where the via structure includes an upper surface. A pad structure can be on the surface of the substrate, where the pad structure can include a lower surface having at least one protrusion that is configured to protrude toward the upper surface of the via structure.

摘要翻译： 半导体器件可以包括具有表面的衬底。 通孔结构可以延伸穿过衬底朝向衬底的表面，其中通孔结构包括上表面。 衬垫结构可以在衬底的表面上，其中衬垫结构可以包括具有至少一个突起的下表面，其被配置为朝向通孔结构的上表面突出。

公开(公告)号：US09064941B2

公开(公告)日：2015-06-23

申请号：US14601215

申请日：2015-01-20

申请人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

发明人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

公开(公告)号：US20150137326A1

公开(公告)日：2015-05-21

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu KANG ,  Byung Lyul PARK ,  SungHee KANG ,  TAESEONG KIM ,  TAEYEONG KIM ,  KWANGJIN MOON ,  Jae-Hwa PARK ,  SUKCHUL BANG ,  Seongmin SON ,  JIN HO AN ,  Ho-Jin LEE ,  JEONGGI JIN

发明人： Pil-Kyu KANG ,  Byung Lyul PARK ,  SungHee KANG ,  TAESEONG KIM ,  TAEYEONG KIM ,  KWANGJIN MOON ,  Jae-Hwa PARK ,  SUKCHUL BANG ,  Seongmin SON ,  JIN HO AN ,  Ho-Jin LEE ,  JEONGGI JIN

IPC分类号： H01L23/48 ,  H01L21/311 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

摘要翻译： 半导体器件包括具有彼此相对的顶表面和底表面的半导体衬底，设置在半导体衬底的顶表面上并且包括集成电路的层间介质层，设置在层间介电层上的金属间介电层 并且包括电连接到集成电路的至少一个金属互连，设置在金属间电介质层上的上部电介质层，贯穿金属间介电层的贯通电极，层间绝缘层和半导体基板， 所述通孔电介质层包围所述贯通电极，并且使所述通孔与所述半导体基板电绝缘。 通孔电介质层包括上电介质层和层间电介质层之间的一个或多个气隙。

公开(公告)号：US20150132950A1

公开(公告)日：2015-05-14

申请号：US14601215

申请日：2015-01-20

申请人： Deok-young JUNG ,  Pil-kyu KANG ,  Byung-lyul PARK ,  Ji-soon PARK ,  Seong-min SON ,  Jin-ho AN ,  Ji-hwang KIM

发明人： Deok-young JUNG ,  Pil-kyu KANG ,  Byung-lyul PARK ,  Ji-soon PARK ,  Seong-min SON ,  Jin-ho AN ,  Ji-hwang KIM

IPC分类号： H01L21/768 ,  H01L21/3105 ,  H01L21/02

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

摘要翻译： 半导体器件包括：基板，包括彼此相对的第一表面和第二表面;延伸穿过基板的通孔电极。 通孔电极具有互连金属层和围绕互连金属层的侧表面的阻挡金属层。 通孔电极的一端在第二表面上方突出。 间隔绝缘层可以设置在通孔电极的外侧壁上。 通孔电极焊盘连接到通孔电极并且在基本平行于第二表面的间隔绝缘层上延伸。 在第二表面上层叠第一氧化硅层和氮化硅层。 第一氧化硅层的厚度大于氮化硅层的厚度。

公开(公告)号：US09859191B2

公开(公告)日：2018-01-02

申请号：US15065903

申请日：2016-03-10

申请人： Ho-Jin Lee ,  Byung Lyul Park ,  Jin Ho An

发明人： Ho-Jin Lee ,  Byung Lyul Park ,  Jin Ho An

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/538 ,  H01L23/31 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/53238 ,  H01L23/5384 ,  H01L23/5385 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor substrate, a circuit layer including an interlayer insulating layer on an upper surface of the substrate, and a conductive via penetrating through the interlayer insulating layer and the substrate, and electrically connected to the circuit layer. The device further includes an insulating layer surrounding the conductive via, and located between the conductive via and the substrate and between the conductive via and interlayer insulating layer, and a buffer layer located between the insulating layer and the conductive via, and overlapping at least a portion of the interlayer insulating layer in a depth direction of the conductive via.

公开(公告)号：US20170047270A1

公开(公告)日：2017-02-16

申请号：US15204632

申请日：2016-07-07

申请人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

发明人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2924/181 ,  H01L2924/00012

摘要： Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.

摘要翻译： 本文提供了具有通孔电极的半导体器件及其制造方法。 所述方法可以包括提供具有彼此面对的顶表面和底表面的半导体衬底，在半导体衬底的顶表面上形成具有中空圆柱形结构的主通孔和连接到主通路的金属线，在其上形成层间绝缘层 半导体衬底的顶表面覆盖主通孔和金属线，去除半导体衬底的一部分以形成露出主通孔的底表面的一部分的通孔，并且在通孔中形成通孔 电连接到主通路。 当在平面图中观察时，主通孔的底表面与通孔的圆周重叠。