中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.02 seconds)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11063009B2

    公开(公告)日：2021-07-13

    申请号：US15888846

    申请日：2018-02-05

    Applicant: Renesas Electronics Corporation

    Inventor： Kenji Sakata ,  Toshihiko Akiba ,  Takuo Funaya ,  Hideaki Tsuchiya ,  Yuichi Yoshida

    IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L23/29

    Abstract: There is a need to improve reliability of the semiconductor device.
    A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness h1 of the pillar electrode is measured from the upper surface of the insulation film. Thickness h2 of the solder layer is measured from the upper surface of the resist layer. Thickness h1 is greater than or equal to a half of thickness h2 and is smaller than or equal to thickness h2.

    Semiconductor device and manufacturing method thereof
    3.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US10141273B2

    公开(公告)日：2018-11-27

    申请号：US15304015

    申请日：2014-04-14

    Applicant: Renesas Electronics Corporation

    Inventor： Shinji Watanabe ,  Tsuyoshi Kida ,  Yoshihiro Ono ,  Kentaro Mori ,  Kenji Sakata ,  Yusuke Yamada

    IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31

    Abstract: In a semiconductor device according to an embodiment, a second semiconductor chip is mounted on a first rear surface of a first semiconductor chip. Also, the first rear surface of the first semiconductor chip includes a first region in which a plurality of first rear electrodes electrically connected to the second semiconductor chip via a protrusion electrode are formed and a second region which is located on a peripheral side relative to the first region and in which a first metal pattern is formed. In addition, a protrusion height of the first metal pattern with respect to the first rear surface is smaller than a protrusion height of each of the plurality of first rear electrodes with respect to the first rear surface.

    Semiconductor device and manufacturing method thereof
    5.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US10312199B2

    公开(公告)日：2019-06-04

    申请号：US15941300

    申请日：2018-03-30

    Applicant: Renesas Electronics Corporation

    Inventor： Shinji Watanabe ,  Tsuyoshi Kida ,  Yoshihiro Ono ,  Kentaro Mori ,  Kenji Sakata ,  Yusuke Yamada

    IPC: H01L23/00 ,  H01L23/31

    Abstract: A manufacturing method of a semiconductor device includes preparing a wiring substrate including a first surface, a plurality of first terminals formed on the first surface, and a second surface opposite to the first surface, arranging a first adhesive on the first surface of the wiring substrate, and after the arranging of the first adhesive, mounting a first semiconductor chip, which includes a first front surface, a plurality of first front electrodes formed on the first front surface, a first rear surface opposite to the first front surface, a plurality of first rear electrodes formed on the first rear surface, and a plurality of through electrodes electrically connecting the plurality of first front electrodes to the plurality of first rear electrodes, on the first surface of the wiring substrate via the first adhesive.

Patent Agency Ranking