公开(公告)号：US20110121458A1

公开(公告)日：2011-05-26

申请号：US12888781

申请日：2010-09-23

申请人： Dirk Siepe ,  Thomas Gutt ,  Roman Roth

发明人： Dirk Siepe ,  Thomas Gutt ,  Roman Roth

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/4851 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/2076 ,  H01L2924/01081 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01015 ,  H01L2924/01007 ,  H01L2924/01006

摘要： A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminium and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.

摘要翻译： 公开了接合线和功率半导体芯片之间的接合连接。 功率半导体芯片具有半导体本体，该半导体主体是具有多个单元的活性单元区域，多个单元沿横向依次排列并联，并联电连接。 半导体本体具有在垂直于横向方向的垂直方向上布置在活性单元区域上方的表面部分。 施加到表面部分的是金属化层，其上粘合有接合线。 接合线包括含有至少99重量％的铝和至少一种另外的合金成分的合金。 铝具有平均粒径小于2μm的晶粒结构。

公开(公告)号：US08541892B2

公开(公告)日：2013-09-24

申请号：US12888781

申请日：2010-09-23

申请人： Dirk Siepe ,  Thomas Gutt ,  Roman Roth

发明人： Dirk Siepe ,  Thomas Gutt ,  Roman Roth

IPC分类号： H01L21/31 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/4851 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/2076 ,  H01L2924/01081 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01015 ,  H01L2924/01007 ,  H01L2924/01006

摘要： A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminum and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.

摘要翻译： 公开了接合线和功率半导体芯片之间的接合连接。 功率半导体芯片具有半导体本体，该半导体主体是具有多个单元的活性单元区域，多个单元沿横向依次排列并联，并联电连接。 半导体本体具有在垂直于横向方向的垂直方向上布置在活性单元区域上方的表面部分。 施加到表面部分的是金属化层，其上粘合有接合线。 接合线包括含有至少99重量％的铝和至少一种另外的合金成分的合金。 铝具有平均粒径小于2μm的颗粒结构。

公开(公告)号：US07851913B2

公开(公告)日：2010-12-14

申请号：US11602024

申请日：2006-11-20

申请人： Thomas Gutt ,  Dirk Siepe ,  Thomas Laska ,  Michael Melzl ,  Matthias Stecher ,  Roman Roth

发明人： Thomas Gutt ,  Dirk Siepe ,  Thomas Laska ,  Michael Melzl ,  Matthias Stecher ,  Roman Roth

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48857 ,  H01L2224/48864 ,  H01L2224/838 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48824 ,  H01L2224/48657 ,  H01L2924/00015

摘要： A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

摘要翻译： 半导体器件具有由第一金属制成的具有至少一个连续部分的第一金属层。 由第二金属制成的至少一个第二金属层被放置在第一金属层的相邻子部分上。 第二种金属比第一种金属更硬。 第二金属层被构造成形成至少两个层区，它们设置在第一金属层的相邻子部分上。 第二金属表现出含硼或含磷金属或含硼或含磷金属合金。

公开(公告)号：US20100212153A1

公开(公告)日：2010-08-26

申请号：US12709552

申请日：2010-02-22

申请人： Roman Roth ,  Dirk Siepe

发明人： Roman Roth ,  Dirk Siepe

IPC分类号： H05K3/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85447 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/2076 ,  Y10T29/49128 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49169 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2924/01006

摘要： The invention relates to a method for fabricating a bond by providing a body including a metallic surface provided with an inorganic, dielectric protective layer. The protective layer covers at least one surface zone of the metallic surface in which the metallic surface is to be electrically conductive bonded to a contact conductor. To fabricate the bond, a portion of a provided contact conductor above the surface zone is pressed on to the protective layer and the body so that the protective layer is destroyed above the surface zone in achieving an electrically conductive bond between the metallic surface and the contact conductor.

摘要翻译： 本发明涉及通过提供一种包括设置有无机介电保护层的金属表面的主体来制造接合的方法。 保护层覆盖金属表面的至少一个表面区域，其中金属表面将被导电地接合到接触导体。 为了制造粘结，在表面区域上方提供的接触导体的一部分被压到保护层和主体上，使得保护层在表面区域之上被破坏，从而实现金属表面和触点之间的导电结合 导体。

公开(公告)号：US08955219B2

公开(公告)日：2015-02-17

申请号：US12709552

申请日：2010-02-22

申请人： Roman Roth ,  Dirk Siepe

发明人： Roman Roth ,  Dirk Siepe

IPC分类号： H01R43/00 ,  H05K13/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85447 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/2076 ,  Y10T29/49128 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49169 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2924/01006

摘要： The invention relates to a method for fabricating a bond by providing a body including a metallic surface provided with an inorganic, dielectric protective layer. The protective layer covers at least one surface zone of the metallic surface in which the metallic surface is to be electrically conductive bonded to a contact conductor. To fabricate the bond, a portion of a provided contact conductor above the surface zone is pressed on to the protective layer and the body so that the protective layer is destroyed above the surface zone in achieving an electrically conductive bond between the metallic surface and the contact conductor.

摘要翻译： 本发明涉及通过提供一种包括设置有无机介电保护层的金属表面的主体来制造接合的方法。 保护层覆盖金属表面的至少一个表面区域，其中金属表面将被导电地接合到接触导体。 为了制造粘结，在表面区域上方提供的接触导体的一部分被压到保护层和主体上，使得保护层在表面区域之上被破坏，从而实现金属表面和触点之间的导电结合 导体。

公开(公告)号：US20110316160A1

公开(公告)日：2011-12-29

申请号：US13226981

申请日：2011-09-07

申请人： Dirk Siepe ,  Reinhold Bayerer

发明人： Dirk Siepe ,  Reinhold Bayerer

IPC分类号： H01L23/485

CPC分类号： H01L23/3735 ,  H01L24/03 ,  H01L24/05 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/82105 ,  H01L2224/82106 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/8501 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/83205

摘要： A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.

摘要翻译： 半导体装置包括具有顶表面和底表面的硅体，以及布置在硅体顶表面上的厚金属层。 厚金属层具有背离硅体的顶表面的接合表面。 接合线或带在厚金属层的接合面接合到厚金属层。 厚金属层的厚度为至少10微米（μm），厚金属层包括铜或铜合金，并且接合线或带包括铜或铜基材料。

公开(公告)号：US20050077175A1

公开(公告)日：2005-04-14

申请号：US11000419

申请日：2004-12-01

申请人： Friedhelm Eisenbeiss ,  Bernd Stanislawski ,  Thomas Greve ,  Renate Bender ,  Roland Hergenroder ,  Gunther Weber ,  Benedikt Grass ,  Andreas Neyer ,  Matthias Johnck ,  Dirk Siepe

发明人： Friedhelm Eisenbeiss ,  Bernd Stanislawski ,  Thomas Greve ,  Renate Bender ,  Roland Hergenroder ,  Gunther Weber ,  Benedikt Grass ,  Andreas Neyer ,  Matthias Johnck ,  Dirk Siepe

IPC分类号： B01L3/00 ,  B29C65/52 ,  B29C65/78 ,  G01N15/14 ,  G01N27/447 ,  G01N30/60 ,  G01N30/64 ,  G01N30/74 ,  G01N35/08 ,  G01N27/26

CPC分类号： B01L3/502707 ,  B01L2200/0689 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0887 ,  B29C65/483 ,  B29C65/522 ,  B29C65/526 ,  B29C65/7802 ,  B29C65/7817 ,  B29C65/7847 ,  B29C66/1122 ,  B29C66/5346 ,  B29C66/71 ,  B29C66/73366 ,  B29C66/73921 ,  B29C66/73941 ,  B29C66/8322 ,  B29K2995/0027 ,  B29L2031/756 ,  G01N15/1404 ,  G01N27/44717 ,  G01N27/4473 ,  G01N27/44791 ,  G01N30/6052 ,  G01N30/6095 ,  G01N30/64 ,  G01N30/74 ,  G01N35/085 ,  Y10T29/49002 ,  B29C65/00 ,  B29K2033/12 ,  B29K2023/18

摘要： The present invention relates to a process for producing a microstructured analytical system including providing at least two plastic components, wetting at least one component, aligning the components, pressing and joining the components together and curing an adhesive.

摘要翻译： 本发明涉及一种用于生产微结构化分析系统的方法，包括提供至少两种塑料组分，润湿至少一种组分，对齐组分，将组分挤压和连接在一起并固化粘合剂。

公开(公告)号：US08164176B2

公开(公告)日：2012-04-24

申请号：US11551488

申请日：2006-10-20

申请人： Dirk Siepe ,  Reinhold Bayerer

发明人： Dirk Siepe ,  Reinhold Bayerer

IPC分类号： H01L23/15

CPC分类号： H01L23/3735 ,  H01L24/03 ,  H01L24/05 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/82105 ,  H01L2224/82106 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/8501 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/83205

摘要： A semiconductor arrangement has a silicon body with a first surface and a second surface and a thick metal layer arranged on at least one surface of the silicon body. The thickness of the thick metal-layer is at least 10 micrometers (μm).

摘要翻译： 半导体装置具有硅体，其具有布置在硅体的至少一个表面上的第一表面和第二表面以及厚金属层。 厚金属层的厚度为至少10微米（μm）。

公开(公告)号：US07597235B2

公开(公告)日：2009-10-06

申请号：US11940523

申请日：2007-11-15

申请人： Dirk Siepe

发明人： Dirk Siepe

IPC分类号： B23K1/06 ,  B23K31/02

CPC分类号： B23K20/004 ,  B23K2101/32 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/48091 ,  H01L2224/78313 ,  H01L2224/7855 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2224/45099 ,  H01L2924/00

摘要： One aspect relates to a bonding apparatus for producing a bonding connection between a bonding wire and a bonding partner. The bonding apparatus includes a heel shaper, which is provided for avoiding damage to the bonding wire in the heel region during the bonding operation.One aspect relates to a method for producing a bonding connection by means of a bonding apparatus having a heel shaper and a bonding stamp. The heel shaper is situated relative to the bonding stamp in a first active position or can be moved into such a first active position. In the first active position, the heel shaper ensures that the bonding wire runs in a permissible region in the heel region.

摘要翻译： 一个方面涉及一种用于在接合线和接合伙伴之间产生接合连接的接合装置。 接合装置包括脚跟整形器，其用于在接合操作期间避免对脚跟区域中的接合线的损坏。 一个方面涉及一种通过具有跟部整形器和接合印章的接合装置来生产接合连接的方法。 鞋跟整形器在第一活动位置中相对于粘合印章定位，或者可以移动到这样的第一活动位置。 在第一活动位置，脚跟整形器确保接合线在脚后跟区域的允许区域中延伸。

公开(公告)号：US09196562B2

公开(公告)日：2015-11-24

申请号：US13226981

申请日：2011-09-07

申请人： Dirk Siepe ,  Reinhold Bayerer

发明人： Dirk Siepe ,  Reinhold Bayerer

IPC分类号： H01L23/15 ,  H01L23/373 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/3735 ,  H01L24/03 ,  H01L24/05 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/82105 ,  H01L2224/82106 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/8501 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/83205

摘要： A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.

摘要翻译： 半导体装置包括具有顶表面和底表面的硅体，以及布置在硅体顶表面上的厚金属层。 厚金属层具有背离硅体的顶表面的接合表面。 接合线或带在厚金属层的接合面接合到厚金属层。 厚金属层的厚度为至少10微米（μm），厚金属层包括铜或铜合金，并且接合线或带包括铜或铜基材料。