公开(公告)号：US09305897B2

公开(公告)日：2016-04-05

申请号：US14138646

申请日：2013-12-23

Applicant: STATS ChipPAC, Ltd.

Inventor： DaeSik Choi ,  JongHo Kim ,  HyungMin Lee

IPC: H01L21/4763 ,  H01L23/00 ,  H01L21/683 ,  H01L23/498 ,  H01L23/538 ,  H01L23/552 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L23/522 ,  H01L23/48 ,  H01L23/31 ,  H01L23/367 ,  H05K3/00

CPC classification number: H01L24/82 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3025 ,  H05K3/0052 ,  H05K3/007 ,  H05K3/0097 ,  H01L2924/01014 ,  H01L2924/05432 ,  H01L2924/054 ,  H01L2924/0542 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/81 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a wafer level substrate having a plurality of first conductive vias formed through the wafer level substrate. A first semiconductor die is mounted to the wafer level substrate. A first surface of the first semiconductor die includes contact pads oriented toward a first surface of the wafer level substrate. A first encapsulant is deposited over the first semiconductor die. A second semiconductor die is mounted to the wafer level substrate. A first surface of the second semiconductor die includes contact pads oriented toward a second surface of the wafer level substrate opposite the first surface of the wafer level substrate. A second encapsulant is deposited over the second semiconductor die. A plurality of bumps is formed over the plurality of first conductive vias. A second conductive via can be formed through the first encapsulant and connected to the first conductive via. The semiconductor packages are stackable.

Abstract translation: 半导体器件包括具有通过晶片级衬底形成的多个第一导电通孔的晶片级衬底。 第一半导体管芯安装到晶片级衬底。 第一半导体管芯的第一表面包括朝向晶片级衬底的第一表面定向的接触焊盘。 第一密封剂沉积在第一半导体管芯上。 第二半导体管芯安装到晶片级衬底。 第二半导体管芯的第一表面包括朝向与晶片级衬底的第一表面相对的晶片级衬底的第二表面的接触焊盘。 第二密封剂沉积在第二半导体管芯上。 在多个第一导电通孔上形成多个凸点。 可以通过第一密封剂形成第二导电通孔并连接到第一导电通孔。 半导体封装是可堆叠的。

公开(公告)号：US20130087898A1

公开(公告)日：2013-04-11

申请号：US13691464

申请日：2012-11-30

Applicant: STATS ChipPAC, Ltd.

Inventor： HeeJo Chi ,  YeongIm Park ,  HyungMin Lee

IPC: H01L21/768 ,  H01L23/495

CPC classification number: H01L21/76802 ,  H01L21/4832 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49517 ,  H01L23/49527 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11002 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16245 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H05K1/185 ,  H05K3/4682 ,  H01L2224/82 ,  H01L2924/01014 ,  H01L2924/0665 ,  H01L2924/0105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A prefabricated multi-die leadframe having a plurality of contact pads is mounted over a temporary carrier. A first semiconductor die is mounted over the carrier between the contact pads of the leadframe. A second semiconductor die is mounted over the contact pads of the leadframe and over the first die. An encapsulant is deposited over the leadframe and first and second die. The carrier is removed. A first interconnect structure is formed over the leadframe and the first die and a first surface of the encapsulant. A channel is cut through the encapsulant and leadframe to separate the contact pads. A plurality of conductive vias can be formed through the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive vias.

Abstract translation: 具有多个接触垫的预制多芯片引线框安装在临时载体上。 第一半导体管芯安装在引线框的接触焊盘之间的载体上。 第二半导体管芯安装在引线框架的接触焊盘上并且在第一管芯上方。 密封剂沉积在引线框架和第一和第二裸片上。 载体被移除。 第一互连结构形成在引线框架和第一管芯以及密封剂的第一表面上。 通过密封剂和引线框架切割通道以分离接触垫。 可以通过密封剂形成多个导电通孔。 第二互连结构形成在密封剂的与密封剂的第一表面相对的第二表面上。 第二互连结构电连接到导电通孔。

公开(公告)号：US09153476B2

公开(公告)日：2015-10-06

申请号：US13691464

申请日：2012-11-30

Applicant: STATS ChipPAC, Ltd.

Inventor： HeeJo Chi ,  YeongIm Park ,  HyungMin Lee

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/495 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H05K1/18 ,  H05K3/46

CPC classification number: H01L21/76802 ,  H01L21/4832 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49517 ,  H01L23/49527 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11002 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16245 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H05K1/185 ,  H05K3/4682 ,  H01L2224/82 ,  H01L2924/01014 ,  H01L2924/0665 ,  H01L2924/0105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A prefabricated multi-die leadframe having a plurality of contact pads is mounted over a temporary carrier. A first semiconductor die is mounted over the carrier between the contact pads of the leadframe. A second semiconductor die is mounted over the contact pads of the leadframe and over the first die. An encapsulant is deposited over the leadframe and first and second die. The carrier is removed. A first interconnect structure is formed over the leadframe and the first die and a first surface of the encapsulant. A channel is cut through the encapsulant and leadframe to separate the contact pads. A plurality of conductive vias can be formed through the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive vias.

Abstract translation: 具有多个接触垫的预制多芯片引线框安装在临时载体上。 第一半导体管芯安装在引线框架的接触焊盘之间的载体上。 第二半导体管芯安装在引线框架的接触焊盘上并且在第一管芯上方。 密封剂沉积在引线框架和第一和第二裸片上。 载体被移除。 第一互连结构形成在引线框架和第一管芯以及密封剂的第一表面上。 通过密封剂和引线框架切割通道以分离接触垫。 可以通过密封剂形成多个导电通孔。 第二互连结构形成在密封剂的与密封剂的第一表面相对的第二表面上。 第二互连结构电连接到导电通孔。

公开(公告)号：US20140110860A1

公开(公告)日：2014-04-24

申请号：US14138646

申请日：2013-12-23

Applicant: STATS ChipPAC, Ltd.

Inventor： DaeSik Choi ,  JongHo Kim ,  HyungMin Lee

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L24/82 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3025 ,  H05K3/0052 ,  H05K3/007 ,  H05K3/0097 ,  H01L2924/01014 ,  H01L2924/05432 ,  H01L2924/054 ,  H01L2924/0542 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/81 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a wafer level substrate having a plurality of first conductive vias formed through the wafer level substrate. A first semiconductor die is mounted to the wafer level substrate. A first surface of the first semiconductor die includes contact pads oriented toward a first surface of the wafer level substrate. A first encapsulant is deposited over the first semiconductor die. A second semiconductor die is mounted to the wafer level substrate. A first surface of the second semiconductor die includes contact pads oriented toward a second surface of the wafer level substrate opposite the first surface of the wafer level substrate. A second encapsulant is deposited over the second semiconductor die. A plurality of bumps is formed over the plurality of first conductive vias. A second conductive via can be formed through the first encapsulant and connected to the first conductive via. The semiconductor packages are stackable.

Abstract translation: 半导体器件包括具有通过晶片级衬底形成的多个第一导电通孔的晶片级衬底。 第一半导体管芯安装到晶片级衬底。 第一半导体管芯的第一表面包括朝向晶片级衬底的第一表面定向的接触焊盘。 第一密封剂沉积在第一半导体管芯上。 第二半导体管芯安装到晶片级衬底。 第二半导体管芯的第一表面包括朝向与晶片级衬底的第一表面相对的晶片级衬底的第二表面的接触焊盘。 第二密封剂沉积在第二半导体管芯上。 在多个第一导电通孔上形成多个凸点。 可以通过第一密封剂形成第二导电通孔并连接到第一导电通孔。 半导体封装是可堆叠的。