Method for forming post passivation Au layer with clean surface
    3.
    发明授权
    Method for forming post passivation Au layer with clean surface 有权
    用于形成后钝化Au层的方法具有干净的表面

    公开(公告)号:US08440272B2

    公开(公告)日:2013-05-14

    申请号:US11949785

    申请日:2007-12-04

    IPC分类号: H01L21/66

    摘要: A method for fabricating and testing a wafer includes forming metal traces with metal pads, wherein forming the metal traces include forming a TiW layer on a passivation layer and on pads, next forming a seed layer on the TiW layer, next forming a photoresist layer on the seed layer, next forming a metal layer on the seed layer exposed by openings in the photoresist layer, next removing the photoresist layer, next removing the seed layer not under the metal layer, and then etching the TiW layer not under the metal layer with an etchant containing H2O2 at a temperature of between 35 and 50° C., or with an etchant containing H2O2 and with ultrasonic waves applied to the etchant, next contacting probe tips of a probe card with some of the metal pads, next cleaning the probe tips until repeating the step of contacting the probe tips with some of the metal pads at greater than 100 times, and then after cleaning the probe tips, repeating the step of contacting the probe tips with some of the metal pads.

    摘要翻译: 用于制造和测试晶片的方法包括用金属焊盘形成金属迹线,其中形成金属迹线包括在钝化层上和在焊盘上形成TiW层,接着在TiW层上形成晶种层,接着在 种子层,接着在种子层上形成通过光致抗蚀剂层中的开口暴露的金属层,接下来去除光致抗蚀剂层,接下来除去不在金属层下方的种子层,然后在不在金属层下面的TiW层上蚀刻, 在35-50℃的温度下含有H 2 O 2的蚀刻剂,或含有H 2 O 2的蚀刻剂和施加到蚀刻剂上的超声波,接下来将探针卡的探针末端与一些金属垫接触,接下来清洁探针 直到重复以大于100次的方式将探针尖端与一些金属焊盘接触的步骤,然后在清洁探针尖端之后,重复将探针尖端与其中的一些接触的步骤 e金属垫。

    Method for forming post passivation Au layer with clean surface
    7.
    发明申请
    Method for forming post passivation Au layer with clean surface 有权
    用于形成后钝化Au层的方法具有干净的表面

    公开(公告)号:US20080131983A1

    公开(公告)日:2008-06-05

    申请号:US11949785

    申请日:2007-12-04

    IPC分类号: H01L21/66

    摘要: A method for fabricating and testing a wafer includes forming metal traces with metal pads, wherein forming the metal traces include forming a TiW layer on a passivation layer and on pads, next forming a seed layer on the TiW layer, next forming a photoresist layer on the seed layer, next forming a metal layer on the seed layer exposed by openings in the photoresist layer, next removing the photoresist layer, next removing the seed layer not under the metal layer, and then etching the TiW layer not under the metal layer with an etchant containing H2O2 at a temperature of between 35 and 50° C., or with an etchant containing H2O2 and with ultrasonic waves applied to the etchant, next contacting probe tips of a probe card with some of the metal pads, next cleaning the probe tips until repeating the step of contacting the probe tips with some of the metal pads at greater than 100 times, and then after cleaning the probe tips, repeating the step of contacting the probe tips with some of the metal pads.

    摘要翻译: 用于制造和测试晶片的方法包括用金属焊盘形成金属迹线,其中形成金属迹线包括在钝化层上和在焊盘上形成TiW层,接着在TiW层上形成晶种层,接着在 种子层,接着在种子层上形成通过光致抗蚀剂层中的开口暴露的金属层,接下来去除光致抗蚀剂层,接下来除去不在金属层下方的种子层,然后在不在金属层下面的TiW层上蚀刻, 在35至50℃的温度下含有H 2 O 2 O 2的蚀刻剂,或与含有H 2 O 2的蚀刻剂 2,并且将超声波施加到蚀刻剂,接下来将探针卡的探针尖端与一些金属垫接触,接下来清洁探针尖端,直到重复使探针尖端与一些金属垫接触的步骤 大于100次,然后清洁探针尖端后,重复该步骤 使探头尖端与一些金属垫接触。