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    Vehicular lock device
    1.
    发明授权
    Vehicular lock device 失效
    车载锁装置

    公开(公告)号：US5156424A

    公开(公告)日：1992-10-20

    申请号：US761142

    申请日：1991-09-17

    申请人： Shuji Nakamura ,  Atsuo Suzuki ,  Takahiro Hisaminato

    发明人： Shuji Nakamura ,  Atsuo Suzuki ,  Takahiro Hisaminato

    IPC分类号： E05B85/24 ,  E05B63/14 ,  E05B79/08 ,  E05C3/24

    CPC分类号： E05C3/24 ,  E05B63/14 ,  E05B83/00 ,  Y10S292/05 ,  Y10T292/0857 ,  Y10T292/1047

    摘要： A vehicular lock device comprises a main latch engageable with a main striker and rotatable, a main ratchet engageable with the main latch in order to keep an engagement relation between the main latch and the main striker, a subsidiary latch adapted to engage with a subsidiary striker and rotate, a subsidiary ratchet adapted to engage with the subsidiary latch in order to sustain an engagement relation of the subsidiary latch with the subsidiary striker, and a rotation lever engageable with the main latch and rotatable correspondingly to rotation of the main latch. Both the latches, both the ratchets, and the rotation lever, respectively are journalled rotatably to the same body of the lock device. When the latch engages with the main striker and the former rotates, the rotation lever rotates so as to make the subsidiary ratchet released from the subsidiary latch. When the subsidiary latch engages with the subsidiary striker, the subsidiary latch rotates the main ratchet so as to make it disengaged from the main latch.

    摘要翻译： 车辆锁定装置包括可与主撞杆接合并可旋转的主闩件，可与主闩锁接合的主棘爪，以便保持主闩锁和主撞杆之间的接合关系，辅助闩锁适于与辅助撞针 并且旋转，适于与辅助闩锁接合的辅助棘轮，以便维持辅助闩锁与辅助撞针的接合关系，以及与主闩锁接合并可相应于主闩锁旋转的旋转杆。 闩锁，棘爪和旋转杆两者分别可转动地安装在锁定装置的同一个主体上。 当闩锁与主撞杆接合并且前者旋转时，旋转杆旋转以使辅助棘轮从辅助闩锁释放。 当辅助闩锁与辅助撞针接合时，辅助闩锁使主棘轮旋转，使其从主闩锁脱离。

    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
    7.
    发明授权
    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
    通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加

    公开(公告)号：US08772758B2

    公开(公告)日：2014-07-08

    申请号：US13470598

    申请日：2012-05-14

    申请人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/06

    CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513

    摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

    摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。