Semiconductor device and method for manufacturing the same
    2.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08581291B2

    公开(公告)日:2013-11-12

    申请号:US12556134

    申请日:2009-09-09

    IPC分类号: H01L33/00

    摘要: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.

    摘要翻译: 本发明提供一种光半导体装置,具备:具有第一主面,与第一主面相对的第二主面的发光层,形成在第二主面上的第一电极和第二电极; 设置在所述第一主表面上的荧光层; 设置在荧光层上并由透光性无机材料制成的透光层; 设置在所述第一电极上的第一金属柱; 设置在所述第二电极上的第二金属柱; 密封层,设置在所述第二主表面上,以便密封在所述第一和第二金属柱中,所述第一和第二金属柱的一端暴露; 设置在第一金属柱的暴露端上的第一金属层; 以及设置在第二金属柱的暴露端上的第二金属层。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20080211076A1

    公开(公告)日:2008-09-04

    申请号:US12040209

    申请日:2008-02-29

    IPC分类号: H01L23/04 H01L21/00

    摘要: A semiconductor device capable of elevating a yield rate of products to improve the productivity and also ensuring high reliability in production and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a semiconductor substrate 2, a MEMS part 3 formed on a surface of the semiconductor substrate 2 and a cap part arranged at a distance from the MEMS part 3 and also arranged on the surface of the semiconductor substrate 2 so as to cover the MEMS part 3. In the semiconductor device, the cap part is formed by a sidewall area E surrounding the MEMS part 3 and a top board area F having a hollow layer and also forming a closed space together with the semiconductor substrate 2 and the sidewall area E.

    摘要翻译: 提供能够提高产品的成品率以提高生产率并且还确保高生产可靠性的半导体器件和半导体器件的制造方法。 半导体器件包括半导体衬底2,形成在半导体衬底2的表面上的MEMS部分3和与MEMS部分3相距一定距离地布置并且还被布置在半导体衬底2的表面上以覆盖 MEMS部件3.在半导体器件中,盖部分由围绕MEMS部件3的侧壁区域E和具有中空层的顶板区域F形成,并且还与半导体衬底2和侧壁一起形成封闭空间 区域E.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110297983A1

    公开(公告)日:2011-12-08

    申请号:US13152654

    申请日:2011-06-03

    IPC分类号: H01L33/50

    摘要: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.

    摘要翻译: 根据一个实施例,半导体发光器件包括发光单元,第一和第二导电构件,绝缘层,密封构件和光学层。 发光单元包括半导体层叠体和第一和第二电极。 半导体层叠体包括第一和第二半导体层和发光层,并且在第二半导体层侧具有主表面。 第一和第二电极分别连接到主表面侧的第一和第二半导体层。 第一导电构件连接到第一电极并且包括覆盖第二半导体的一部分的第一柱状部分。 绝缘层设置在第一柱状部分和第二半导体的部分之间。 密封构件覆盖导电构件的侧表面。 光学层设置在另一个主表面上。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号:US20120241792A1

    公开(公告)日:2012-09-27

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/60 H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    10.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    光学半导体器件及其制造方法

    公开(公告)号:US20110297987A1

    公开(公告)日:2011-12-08

    申请号:US13154999

    申请日:2011-06-07

    IPC分类号: H01L33/50

    摘要: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

    摘要翻译: 根据一个实施例,光学半导体器件包括发光层,透明层,第一金属柱,第二金属柱和密封层。 发光层包括第一和第二主表面,第一和第二电极。 第二主表面是与第一主表面相对的表面,并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面,并且密封第一和第二金属柱,同时使第一和第二金属柱的端部露出。