Method and apparatus for uniformly metallization on substrate

    公开(公告)号:US11629425B2

    公开(公告)日:2023-04-18

    申请号:US17164539

    申请日:2021-02-01

    摘要: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

    Method and apparatus for uniformly metallization on substrate

    公开(公告)号:US10907266B2

    公开(公告)日:2021-02-02

    申请号:US16142789

    申请日:2018-09-26

    摘要: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

    Electroplating method and electroplating apparatus for through-hole
    9.
    发明授权
    Electroplating method and electroplating apparatus for through-hole 有权
    电镀方法和通孔电镀设备

    公开(公告)号:US09297088B2

    公开(公告)日:2016-03-29

    申请号:US13959811

    申请日:2013-08-06

    申请人: EBARA CORPORATION

    摘要: There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

    摘要翻译: 提供了一种用于通孔的电镀方法。 该方法包括:第一电镀工艺,第二电镀工艺和第三镀覆工艺。 第一电镀工艺是在通孔中形成均匀厚度的金属膜以减小通孔的直径的电镀工艺,第二电镀工艺是封闭通孔的中心部分的电镀工艺, 使用PR脉冲电流与金属膜形成孔,并且第三电镀工艺是使用等于或大于其的正向电流值的电镀电流,用金属膜完全填充通孔的电镀工艺 PR脉冲电流用于第二电镀工艺。

    Electroplating head and method for operating the same
    10.
    发明授权
    Electroplating head and method for operating the same 有权
    电镀头及其操作方法

    公开(公告)号:US08419917B2

    公开(公告)日:2013-04-16

    申请号:US12482171

    申请日:2009-06-10

    IPC分类号: C25D5/20 C25D5/02 C25D5/00

    摘要: An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.

    摘要翻译: 电镀头设置在晶片的上表面上方并靠近晶片的上表面。 阳离子从阳极转移到电镀头内的电镀溶液中。 电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。 通过电镀溶液在晶片的阳极和上表面之间建立电流。 通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。 电流导致阳离子被吸引到晶片的上表面。