公开(公告)号：US12068351B2

公开(公告)日：2024-08-20

申请号：US18322239

申请日：2023-05-23

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa

IPC分类号： H01L27/146 ,  H01L31/09

CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/09 ,  H01L27/14621

摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

公开(公告)号：US12040416B2

公开(公告)日：2024-07-16

申请号：US17955854

申请日：2022-09-29

申请人： PIXART IMAGING INC.

发明人： Yi-Chang Chang ,  Yen-Hsin Chen ,  Chi-Chih Shen

IPC分类号： H01L31/0203 ,  G01J5/00 ,  G01J5/04 ,  G01J5/20 ,  H01L27/146 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/024 ,  H01L31/09

CPC分类号： H01L31/0203 ,  G01J5/00 ,  G01J5/0025 ,  G01J5/045 ,  G01J5/20 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02363 ,  G01J2005/206 ,  H01L27/14601 ,  H01L31/02164 ,  H01L31/024 ,  H01L31/095

摘要： An optical component packaging structure is provided. The optical component packaging structure includes a substrate, a far-infrared sensor chip, a metal covering cap and a light filter. The far-infrared sensor chip is disposed on the substrate and electrically connected to the substrate. The metal covering cap is disposed on the substrate and accommodating the far-infrared sensor chip. The metal covering cap has an opening exposing the far-infrared sensor chip. The light filter is disposed out of the opening and on the inner surface for covering the opening to filter the far-infrared light passing through. The far-infrared sensor chip is surrounded by the metal covering cap, the substrate and the light filter, and the metal covering cap is directly connected with the substrate.

公开(公告)号：US11990498B2

公开(公告)日：2024-05-21

申请号：US17156639

申请日：2021-01-25

申请人： Meridian Innovation Pte Ltd

发明人： Wan Chia Ang ,  Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

IPC分类号： G01J5/12 ,  B81C1/00 ,  G01J5/02 ,  G01J5/04 ,  G01J5/08 ,  G01J5/16 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/09

CPC分类号： H01L27/14669 ,  B81C1/00 ,  B81C1/00246 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/046 ,  G01J5/048 ,  G01J5/0853 ,  G01J5/12 ,  G01J5/16 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14649 ,  H01L31/0224 ,  H01L31/09 ,  B81C2203/0742 ,  G01J2005/123

摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

公开(公告)号：US20240113241A1

公开(公告)日：2024-04-04

申请号：US18265654

申请日：2021-11-26

申请人： LYNRED ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Axel EVIRGEN ,  Jean-Luc REVERCHON

IPC分类号： H01L31/0352 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/09

CPC分类号： H01L31/035236 ,  H01L27/14649 ,  H01L31/03046 ,  H01L31/09

摘要： A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

公开(公告)号：US11935982B2

公开(公告)日：2024-03-19

申请号：US16855660

申请日：2020-04-22

申请人： OSRAM Opto Semiconductors GmbH

发明人： David O'Brien ,  Erik Johansson

IPC分类号： H01L31/09 ,  H01L31/02 ,  H01L31/048

CPC分类号： H01L31/09 ,  H01L31/02024 ,  H01L31/048

摘要： An arrangement is disclosed. The arrangement comprises at least one semiconductor structure configured to convert a primary radiation into a secondary radiation; an encapsulation layer covering the at least one semiconductor structure; and at least one reflective layer arranged on the encapsulation layer. The semiconductor structure is arranged in a center of the arrangement, and a lateral extent of the arrangement is chosen such that an optically resonant condition is fulfilled for a wavelength of the secondary radiation in the encapsulation layer. Methods for producing an arrangement and an optoelectronic device are also disclosed.

公开(公告)号：US20230395618A1

公开(公告)日：2023-12-07

申请号：US18236667

申请日：2023-08-22

申请人： Artilux, Inc.

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/105

CPC分类号： H01L27/14605 ,  H01L27/14645 ,  H01L31/0312 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  H01L27/14687 ,  H01L27/14685 ,  H01L27/14698 ,  H01L31/09 ,  H01L31/1892 ,  H01L27/14634 ,  H01L27/14632 ,  H01L27/1465 ,  H01L31/1812 ,  H01L27/1469 ,  H01L31/02327 ,  H01L31/1876 ,  H01L31/105 ,  H01L27/14649

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.

公开(公告)号：US11837988B2

公开(公告)日：2023-12-05

申请号：US15976167

申请日：2018-05-10

申请人： University of South Florida

发明人： Michael Wayne Fountain ,  Gabriel Lee Saffold

IPC分类号： H02S10/30 ,  H01Q1/24 ,  H01L31/08 ,  H01L31/09 ,  H02S99/00 ,  H02N11/00 ,  H02M7/06

CPC分类号： H01Q1/248 ,  H01L31/08 ,  H01L31/09 ,  H02N11/002 ,  H02S10/30 ,  H02S99/00 ,  H02M7/06 ,  Y02E10/46

摘要： A method and device to collect and convert thermal energy from the surrounding environments to produce usable electric power. The device includes a rectenna that is preferably a narrow bandwidth rectenna. In an embodiment, the rectenna comprises a rectenna complex, which is, in sequence, a high gain antenna, optional matching circuits, an optional narrow bandpass filter, and one or more rectifying diodes. An embodiment may include multiple arrays of linked nanoscale rectenna complexes. When linked in arrays using preselected bandwidths in the infrared and near infrared spectral regions, the rectenna complex acts as a thermally responsive collector capable of extracting heat energy from its surrounding environment to produce usable electric power.

公开(公告)号：US11830954B2

公开(公告)日：2023-11-28

申请号：US17974325

申请日：2022-10-26

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  H01L27/144 ,  G02B1/00 ,  G02B6/42 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H04B10/25 ,  H04B10/40 ,  H04B10/69 ,  H04B10/80

CPC分类号： H01L31/02363 ,  G02B1/002 ,  G02B6/4204 ,  G02B6/428 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  G02B1/005 ,  Y02E10/547 ,  Y02P70/50

摘要： Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

公开(公告)号：US11808627B2

公开(公告)日：2023-11-07

申请号：US17043774

申请日：2019-03-28

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  Sorbonne Universite ,  ECOLE NORMALE SUPERIEURE DE PARIS ,  UNIVERSITÉ PARIS CITÉ

发明人： Kenneth Maussang ,  Sukhdeep Dhillon ,  Jerome Tignon

IPC分类号： G01J1/44 ,  G01J4/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/09 ,  H01L31/0304 ,  G01J4/00 ,  G01J3/42 ,  G01J1/42 ,  G01J3/10 ,  G02F2/02

CPC分类号： G01J1/44 ,  G01J1/42 ,  G01J3/10 ,  G01J3/42 ,  G01J4/00 ,  G01J4/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/09 ,  G01J2001/446 ,  G02F2/02 ,  G02F2203/13

摘要： A photoconductive switch for generating or detecting terahertz radiation (TR) is provided. The photoconductive switch may comprise at least a first and a second pair of electrodes (EV, EH, EGR) on a surface (SS) of a photoconductive substrate, wherein the electrodes of the first pair are separated by a first gap comprising at least a plurality of first rectilinear sections (GV) extending along a first direction (x) and the electrodes of the second pairs are separated by a second gap comprising at least a plurality of second sections (GH) extending along a second direction (y), different from the first direction. The photoconductive switch may further comprise a patterned opaque layer (PML) selectively masking portions of the gaps between the electrodes. Methods and devices for generating and detecting terahertz radiation comprising such photoconductive switches are also provided.

公开(公告)号：US20230299112A1

公开(公告)日：2023-09-21

申请号：US18322239

申请日：2023-05-23

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa

IPC分类号： H01L27/146 ,  H01L31/09

CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L31/09 ,  H01L27/14645 ,  H01L27/1469 ,  H01L27/14685 ,  H01L27/14621

摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.