Abstract:
A leadframe (1), comprising a first part (1a) and a second part (1b), wherein the first part (1a) and the second part (1b) are separated from each other,and the first part (1a) and the second part (1b) each comprise at least one anchoring hole (3). The first part (1a) comprises a mounting area (2), the second part (1b) comprises an edge line facing the first part (1a) which is curved, and the first part (1a) comprises a first portion (A) having a maximum width (A1), a second portion (B) having a maximum width (B1) and a third portion (C) having a maximum width (C1), wherein the mounting area (2) is arranged at the third portion (C), and wherein the third portion (C) follows the second portion (B) and the second portion (B) follows the first portion (A) in a direction of a longitudinal extend (L) of the first part (1a) such that the third portion(C) faces the second part (1b). The widths (A1, B1, C1) of the first, the second and the third portion (A, B, C) extend in a direction perpendicular to the longitudinal extend (L) of the first part (1a),and the maximum width (B1) of the second portion (B) is smaller than the maximum width (A1) of the first portion (A) and smaller than the maximum width (C1) of the third portion (C), and edge lines of the first (A) and the third portion (C) are non-parallel to each other, as seen in a top view of the first part (1a).
Abstract:
The present disclosure relates to non-planar inductive electrical elements in semiconductor package lead frames. A non-planar inductive element is formed from a lead frame in a semiconductor package. The semiconductor package also includes at least one semiconductor die coupled to the lead frame. The non-planar inductive element could be formed by deforming portions of a patterned planar lead frame blank to form the non-planar inductive element in a deformed lead frame blank. The deformed lead frame blank and the at least one semiconductor die could then be packaged into a semiconductor package. A setting tool could be used to deform the lead frame blank. A configurable lead frame blank could be configurable into any of a variety of inductive elements, through interconnection of lead frame segments using wire bonds, for example.
Abstract:
High voltage rated isolation capacitors are formed on a face of a primary integrated circuit die. The isolation capacitors AC couple the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitors DC isolate the primary integrated circuit from the second integrated circuit die. Isolated power transfer from the first voltage domain to the second voltage domain is provided through the high voltage rated isolation capacitors with an AC oscillator or PWM generator. The AC oscillator voltage amplitude may be increased for an increase in power through the high voltage rated isolation capacitors, and a larger value capacitor in the second voltage domain may provide for peak current demand from circuits in the second voltage domain.
Abstract:
Disclosed are a leadframe (101, 102), a device package (400), and a method of construction configured to attain a thin profile and improved thermal performance. Leadframes of this invention include a raised die attachment pad (102) arrange above distal ends of leadframe leads (101). A package (400) will further include a die (401) electrically coupled with an underside surface of the raised die attachment pad (102), in one example, using ball bonds (402), the whole sealed in an encapsulant (405) that exposes a bottom portion (401b) of the die (401) and a portion of a lead (1 11). Two leadframe stacks of such packages are also disclosed as are methods of manufacture.
Abstract:
A leadless integrated circuit package (300, 600, 800, 900, 1000) comprising an IC chip (304, 404, 504, 604, 704, 804, 904a, 904b) mounted on a metal lead frame and a plurality of electrical contacts electrically coupled to the IC chip (304, 404, 504, 604, 704, 804, 904a, 904b). The IC chip (304, 404, 504, 604, 704, 804, 904a, 904b), the electrical contacts, and a portion of the metal lead frame are covered with an encapsulation compound (308, 508, 608, 708, 1008), with portions of the electrical contacts protruding from a bottom surface of the encapsulation.
Abstract:
A semiconductor device comprising a leadframe (4) with a carrier pad (3) bonded thereto, and a die (2) bonded to the carrier pad (3) to form a bonded assembly (5) which is encapsulated in a housing (7) with leads (8) of the leadframe (4) extending therefrom is formed by initially bonding the carrier pad (3) which is pre-coated with a thermosetting first adhesive (20) to the leadframe (4). The first adhesive (20) is raised to its thermosetting cure temperature for bonding the carrier pad (3) to the leadframe (4) by heating the leadframe (4) to a temperature just above the thermosetting cure temperature of the first adhesive (20). A thermosetting second adhesive (22) which is liquid at room temperature is applied to a second major surface (19) of the carrier pad (3), and the die (2) is placed on the second adhesive (22) and aligned with the leadframe (4). The second adhesive (22) is raised to its thermosetting cure temperature to bond the die (2) to the carrier pad (3), and in turn form a bonded assembly (5). Bond wires (15) are electrically coupled to contact pads (14) of the die (2) and leads (8) of the leadframe (4) and the bonded assembly (5) is then encapsulated in the encapsulating housing (7).
Abstract:
A high voltage semiconductor module has a leadframe with spaced pads which is connected to a heat sink plate by a curable insulation layer on the top of the plate. Semiconductor die may be soldered to the leadframe pads before or after assembly to the plate. The insulation layer may be a curable epoxy or a B stage IMS plate.