Abstract:
PROBLEM TO BE SOLVED: To provide a cable connection structure and a cable connection method which prevent crushing and displacement of a cable conductor part during joining.SOLUTION: A cable connection structure 100 according to the present invention comprises a cable 1A and a substrate 10 having a connection electrode 11 to which the cable 1A is connected. The cable connection structure 100 is characterized in that: the substrate 10 has, on the connection electrode 11, two or more protrusions 12 forming a groove in which a conductor part 1 of the cable 1A is disposed; and a height of the protrusions 12 is greater than a diameter of the conductor part 1 of the cable 1A.
Abstract:
PROBLEM TO BE SOLVED: To form an inexpensive and highly reliable connection structure capable of simplifying a manufacturing process by connecting a connecting electrode having organic films as an oxidation preventing film using a conductive adhesive. SOLUTION: This electrode connection method for connecting a first connecting electrode 2 to a second connecting electrode 10 through the conductive adhesive 9 interposed between these electrodes includes an organic film forming process to provide an organic film 6 on the surface of at least the first connecting electrode, and an electrode connecting process to connect the first connecting electrode to the second connecting electrode through the conductive adhesive. In the electrode connecting process, an organic film decomposing component blended in the conductive adhesive is made to act on the organic film, and the organic film is decomposed to perform connection between these connecting electrodes. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate which is not easily curved and is excellent in heat radiation efficiency, and to provide a power semiconductor module. SOLUTION: The power semiconductor module 1 is disclosed. One embodiment includes the multilayer substrate 3 having a plurality of metal layers 11, 12 and 13 and a plurality of ceramic layers 21 and 22, where the ceramic layers are located between the metal layers. The power semiconductor module 1 may be pressed directly against a heat sink 9 with the multilayer substrate 3 ahead. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a circuit board, which can manufacture a circuit board having a high-density circuit pattern without adding insulators. SOLUTION: A method of manufacturing a printed circuit board comprises: a step (a) of forming a conductive convex pattern, in which a first plating layer, a first metal layer, and a second plating layer are sequentially laid so as to correspond to a first circuit pattern, on a seed layer laid on a carrier; a step (b) of laying an insulator so that it faces the one surface of the carrier on which the conductive convex pattern is formed and of press-bonding the carrier and the insulator to each other; a step (c) of removing the carrier to transfer the conductive convex pattern to the insulator; a step (d) of forming a conductive pattern, in which a third plating layer and a second metal layer are sequentially laid so as to correspond to a second circuit pattern, on the one surface of the insulator that has the transferred conductive convex pattern; a step (e) of removing the first plating layer and the seed layer; and a step (f) of removing the first metal layer and the second metal layer. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
A semiconductor device including a semiconductor chip (10) which has an electrode and also has an active surface covered with an insulating layer (100). A rewiring circuit (120) is formed on the insulating layer (100) and is electrically connected to the electrode. An inner bump (140) is formed on a conductive pad (122) which is a part of the rewiring circuit (120). An insulating film (160) is attached to the rewiring circuit (120) and a surface of the insulating layer (100) at a peripheral portion of the rewiring circuit (120). The insulating film (160) has a through hole (180) into which the inner bump (140) is inserted. An outer bump (200) is superimposed on the inner bump (140) in the through hole (180) so as to project outwards away from the semiconductor chip (10).
Abstract:
PROBLEM TO BE SOLVED: To provide a mounting method for a semiconductor component which has a suitable solder bump for obtaining an ideal joining state of sufficiently high reliability, and a mounting device. SOLUTION: The semiconductor component 26 with the solder bump 26a and a substrate 42 with a solder bump 42a are heated one-side ends of the solder bumps 26a and 42a are pressed against a stage having unevenness to plastically be deformed, thereby forming a new surface with a sufficient area. A flux coating 32 is transferred to coat the new surface. The solder bump 26a of the semiconductor component 26 is mounted on the solder bump 42a of the substrate 42 to mount the semiconductor component 26 on the substrate 42. The semiconductor component 26 and the substrate 42 are heated to fuse and join the solder bumps 26a and 42a. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
An anisotropic conductive adhesive film contains a first insulating adhesive layer, a second insulating adhesive layer whose modulus of elasticity after curing is less than the modulus of elasticity of the cured first insulating adhesive layer, and electrically conductive particles which are dispersed in at least either the first insulating adhesive layer or the second insulating adhesive layer.