Semiconductor device and semiconductor device manufacturing method
    6.
    发明专利
    Semiconductor device and semiconductor device manufacturing method 审中-公开
    半导体器件和半导体器件制造方法

    公开(公告)号:JP2014150235A

    公开(公告)日:2014-08-21

    申请号:JP2013060046

    申请日:2013-03-22

    IPC分类号: H01L21/60

    摘要: PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method of manufacturing a high-quality and low-cost semiconductor.SOLUTION: A semiconductor device manufacturing method comprises: providing a first substrate 110 having a first surface 111; providing first metal bumps each having a bottom and a joining part which has a first softening point and arranging the first metal bumps on the first surface 111 so as to locate the bottoms between the joining parts and the first substrate 110; providing a second substrate 120 having a second surface 121; arranging second metal bumps 122 on the second surface 121; performing heating to put the first metal bumps in a softened state; facing the first surface 111 and the second surface 121 each other and inserting the second metal bumps 122 into the joining parts 112b' after softening of the first metal bumps, respectively such that each joining part 112b' after softening extends to a top face 122c and a sidewall 122d which cover each second metal bump 122 by reception of pressure and each bottom 112a' after softening of the first metal bump is located between each metal bump 122 and the first substrate 110.

    摘要翻译: 要解决的问题:提供制造高质量和低成本半导体的半导体制造方法。解决方案:一种半导体器件制造方法,包括:提供具有第一表面111的第一基板110; 提供每个具有底部的第一金属凸块和具有第一软化点的接合部分,并且将第一金属凸块布置在第一表面111上,以便将接头部分和第一基板110之间的底部定位; 提供具有第二表面121的第二基底120; 在第二表面121上布置第二金属凸块122; 进行加热以使第一金属凸块处于软化状态; 面对第一表面111和第二表面121,并且分别在第一金属凸块软化之后将第二金属凸块122插入到接合部分112b'中,使得软化后的每个接合部分112b'延伸到顶面122c和 通过接收压力覆盖每个第二金属凸块122的侧壁122d和在第一金属凸块的软化之后的每个底部112a'位于每个金属凸块122和第一基板110之间。