Semiconductor device
    8.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号:JP2008277733A

    公开(公告)日:2008-11-13

    申请号:JP2007299110

    申请日:2007-11-19

    发明人: FUJIWARA SHINICHI

    IPC分类号: H01L21/60

    摘要: PROBLEM TO BE SOLVED: To provide a semiconductor device which has high reliability and can be adapted to high-speed transmission by preventing an inter-bump short-circuit or the fracture of a connected portion caused by high strain generated upon the heating or application of a load during connection, or reducing contact resistance, in a structure for connecting a semiconductor element having a fine pitch electrode at a 50 μm pitch or smaller and a pad or wiring on a substrate. SOLUTION: The substrate and the semiconductor element are connected by a bump having a longitudinal elastic modulus (Young's modulus) of 65 GPa or larger and 600 GPa or smaller and a buffer layer including one of tin, aluminum, indium, or lead as a main ingredient. Further, protrusions are formed at least at one of opposing surfaces of the bump and the pad or the wiring on the substrate, and the surfaces are connected by ultrasonic waves. Thereby, low-temperature connection is made possible. COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译: 要解决的问题:提供一种具有高可靠性并且可以通过防止由加热产生的高应变引起的凸起间短路或连接部分的断裂而具有高可靠性的半导体器件 或在连接中施加负载或降低接触电阻的结构,用于将具有50μm间距或更小间距的细间距电极的半导体元件与衬底上的焊盘或布线连接。 解决方案:衬底和半导体元件通过具有65GPa以上且600GPa以下的纵向弹性模量(杨氏模量)的凸块和包含锡,铝,铟或铅中的一种的缓冲层连接 作为主要成分。 此外,在凸块和焊盘或基板上的布线的至少一个相对表面上形成突起,并且通过超声波连接表面。 由此,能够进行低温连接。 版权所有(C)2009,JPO&INPIT