公开(公告)号：US20050098605A1

公开(公告)日：2005-05-12

申请号：US10702416

申请日：2003-11-06

申请人： Daniel Edelstein ,  John Fitzsimmons ,  Jeffrey Gambino ,  Anthony Stamper

发明人： Daniel Edelstein ,  John Fitzsimmons ,  Jeffrey Gambino ,  Anthony Stamper

IPC分类号： B23K20/00 ,  H01L23/485 ,  B23K37/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48609 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48709 ,  H01L2224/48711 ,  H01L2224/48744 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85359 ,  H01L2224/85801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2924/00015

摘要： A structure and method for low-pressure wirebonding, reducing the propensity of dielectric material to mechanical failure due to wirebond stress. A low temperature alloy on the surface of a bond pad allows alloy bond formation to occur between the wire and the bond pad at reduced bond pressures and reduced thermal and ultrasonic energies. Preferred alloys include Au—Sn and Au—In. The Au—Sn alloy may be formed over the Cu bond pad, incorporated in an aluminum bond pad stack, or deposited on a bond pad having Ni—Au capping of Cu or Al bond pads.

摘要翻译： 一种用于低压引线键合的结构和方法，降低了由于引线键应力导致的介电材料对机械故障的倾向。 接合焊盘表面上的低温合金允许在降低的接合压力和降低的热和超声能量的情况下在导线和接合焊盘之间形成合金结合。 优选的合金包括Au-Sn和Au-In。 Au-Sn合金可以形成在结合在铝焊盘叠层中的Cu焊盘上，或者沉积在具有Cu或Al键合焊盘的Ni-Au封盖的焊盘上。

公开(公告)号：US20170012018A1

公开(公告)日：2017-01-12

申请号：US15276156

申请日：2016-09-26

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hirohiko WATANABE ,  Shunsuke SAITO ,  Masahiro ONO ,  Takashi WATANABE ,  Shinji SANO ,  Kazunaga ONISHI

IPC分类号： H01L23/00 ,  B23K35/26 ,  H01L21/52 ,  B23K1/00

CPC分类号： H01L24/48 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K1/203 ,  B23K35/26 ,  B23K35/262 ,  B23K2101/42 ,  C22C13/02 ,  H01L21/52 ,  H01L23/40 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/49 ,  H01L24/81 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32227 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48506 ,  H01L2224/4852 ,  H01L2224/49109 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85359 ,  H01L2224/85805 ,  H01L2224/85825 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H05K3/3463 ,  H05K2201/10166 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01026 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01078 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01051 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %≦(M×C+B)×100/(M+B)≦4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.

摘要翻译： 在将含铂的无铅焊料焊接到含Ag构件的焊接方法中，防止产生空隙并提高焊料润湿性。 本发明的含Ag无铅焊料的焊接方法是含Ag无铅焊料的焊接方法，其包括使具有含Ag组成的无铅焊料成为浓度 含Ag组分中所含的质量M（g）和质量M（g）的Ag和溶出量B（g）之前的Sn-Ag类无铅焊料中所含的Ag的C（质量％）为1.0质量％ （M×C + B）×100 /（M + B）≤4.4质量％，余量由Sn和不可避免的杂质构成与含Ag构件接触，第二步是对无铅焊料进行加热熔融 ，以及冷却无铅焊料的第三步骤。

公开(公告)号：US09972598B2

公开(公告)日：2018-05-15

申请号：US15640493

申请日：2017-07-01

申请人： Renesas Electronics Corporation

发明人： Yuki Yagyu

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L24/85 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45687 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/7815 ,  H01L2224/78756 ,  H01L2224/8502 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85355 ,  H01L2224/85359 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85898 ,  H01L2224/85948 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2924/0541 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01106 ,  H01L2924/01107 ,  H01L2224/45664 ,  H01L2924/00015

摘要： Reliability of a semiconductor device is improved.A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

公开(公告)号：US11876072B2

公开(公告)日：2024-01-16

申请号：US17465328

申请日：2021-09-02

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Wei-Zhong Li ,  Yi-Ting Shih ,  Chien-Chung Wang ,  Hsih-Yang Chiu

IPC分类号： H01L23/00

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/48824 ,  H01L2224/85031 ,  H01L2224/85359

摘要： A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

公开(公告)号：US20180082977A1

公开(公告)日：2018-03-22

申请号：US15640493

申请日：2017-07-01

申请人： Renesas Electronics Corporation

发明人： Yuki YAGYU

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L24/85 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45687 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/7815 ,  H01L2224/78756 ,  H01L2224/8502 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85355 ,  H01L2224/85359 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85898 ,  H01L2224/85948 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2924/0541 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01106 ,  H01L2924/01107 ,  H01L2224/45664 ,  H01L2924/00015

摘要： Reliability of a semiconductor device is improved.A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

公开(公告)号：US12113046B2

公开(公告)日：2024-10-08

申请号：US18386345

申请日：2023-11-02

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Wei-Zhong Li ,  Yi-Ting Shih ,  Chien-Chung Wang ,  Hsih-Yang Chiu

IPC分类号： H01L23/00

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/48824 ,  H01L2224/85031 ,  H01L2224/85359

摘要： A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

公开(公告)号：US20240063175A1

公开(公告)日：2024-02-22

申请号：US18386345

申请日：2023-11-02

申请人： NANYA TECHNOLOGY CORPORATION

发明人： WEI-ZHONG LI ,  YI-TING SHIH ,  CHIEN-CHUNG WANG ,  HSIH-YANG CHIU

IPC分类号： H01L23/00

CPC分类号： H01L24/85 ,  H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/85359 ,  H01L2224/85031 ,  H01L2224/04042 ,  H01L2224/03831 ,  H01L2224/48824

摘要： A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

公开(公告)号：US10002845B2

公开(公告)日：2018-06-19

申请号：US15276156

申请日：2016-09-26

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hirohiko Watanabe ,  Shunsuke Saito ,  Masahiro Ono ,  Takashi Watanabe ,  Shinji Sano ,  Kazunaga Onishi

IPC分类号： H01L21/00 ,  H01L23/00 ,  B23K1/19 ,  B23K35/26 ,  C22C13/02 ,  H01L23/40 ,  H01L21/52 ,  H01L25/07 ,  H01L25/18 ,  B23K1/00 ,  B23K1/008 ,  B23K1/20 ,  H05K3/34 ,  H01L23/482 ,  B23K101/42

CPC分类号： H01L24/48 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K1/203 ,  B23K35/26 ,  B23K35/262 ,  B23K2101/42 ,  C22C13/02 ,  H01L21/52 ,  H01L23/40 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/49 ,  H01L24/81 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32227 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48506 ,  H01L2224/4852 ,  H01L2224/49109 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85359 ,  H01L2224/85805 ,  H01L2224/85825 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/13055 ,  H05K3/3463 ,  H05K2201/10166 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01026 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01078 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01051 ,  H01L2224/85399 ,  H01L2224/05599 ,  H01L2924/00

摘要： In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %≤(M×C+B)×100/(M+B)≤4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.