利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

135 条记录 (耗时 0.025 秒)

    METAL INTERCONNECT FORMING METHODS AND IC CHIP INCLUDING METAL INTERCONNECT
    94.
    发明申请
    METAL INTERCONNECT FORMING METHODS AND IC CHIP INCLUDING METAL INTERCONNECT 有权
    金属互连形成方法和金属互连芯片包括金属互连

    公开(公告)号：US20090001592A1

    公开(公告)日：2009-01-01

    申请号：US11770928

    申请日：2007-06-29

    申请人： Karl W. Barth ,  Ramona Kei ,  Kaushik A. Kumar ,  Kevin S. Petrarca ,  Shahab Siddiqui

    发明人： Karl W. Barth ,  Ramona Kei ,  Kaushik A. Kumar ,  Kevin S. Petrarca ,  Shahab Siddiqui

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L23/5329 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of forming a metal interconnect and an IC chip including the metal interconnect are disclosed. One embodiment of the method may include providing an integrated circuit (IC) chip up to and including a middle of line (MOL) layer, the MOL layer including a contact positioned within a first dielectric; recessing the first dielectric such that the contact extends beyond an upper surface of the first dielectric; forming a second dielectric over the first dielectric such that the second dielectric surrounds at least a portion of the contact, the second dielectric having a lower dielectric constant than the first dielectric; forming a planarizing layer over the second dielectric; forming an opening through the planarizing layer and into the second dielectric to the contact; and forming a metal in the opening to form the metal interconnect.

    摘要翻译： 公开了形成金属互连的方法和包括金属互连的IC芯片。 该方法的一个实施例可以包括提供直到并包括中间线（MOL）层的集成电路（IC）芯片，MOL层包括定位在第一电介质内的触点; 使第一电介质凹陷，使得接触延伸超过第一电介质的上表面; 在所述第一电介质上形成第二电介质，使得所述第二电介质围绕所述接触的至少一部分，所述第二电介质具有比所述第一电介质更低的介电常数; 在所述第二电介质上形成平坦化层; 通过平坦化层形成开口并进入到接触件的第二电介质中; 并在开口中形成金属以形成金属互连。

    Self-contained heat sink and a method for fabricating same
    98.
    发明授权
    Self-contained heat sink and a method for fabricating same 失效
    独立散热片及其制造方法

    公开(公告)号：US06815813B1

    公开(公告)日：2004-11-09

    申请号：US10604211

    申请日：2003-07-01

    申请人： Timothy J. Dalton ,  Kevin S. Petrarca ,  Michelle L. Steen ,  Cornelia K. Tsang ,  Richard P. Volant

    发明人： Timothy J. Dalton ,  Kevin S. Petrarca ,  Michelle L. Steen ,  Cornelia K. Tsang ,  Richard P. Volant

    IPC分类号： H01L2334

    CPC分类号： H01L23/58 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A system and method are provided for thermal dissipation from a heat producing electronic device. The system includes a substrate for fabricating integrated circuits, the substrate having a first face and a second face. The second face is disposed substantially parallel to the first face having an electronic device disposed therein. A metallized crack stop is disposed in the first face surrounding the electronic device. A plurality of first metal conduits extend through the substrate from the second face thereof to the crack stop, wherein each first metal conduit is in thermal contact with the crack stop to provide a thermal drain from the electronic device to the second face.

    摘要翻译： 提供了一种从制热电子设备散热的系统和方法。 该系统包括用于制造集成电路的基板，该基板具有第一面和第二面。 第二面基本上平行于第一面设置，其中设置有电子装置。 在电子设备周围的第一面设有金属化的裂纹停止件。 多个第一金属导管从其第二面延伸穿过基板到裂缝停止部，其中每个第一金属导管与裂纹停止件热接触以提供从电子装置到第二面的热耗散。

    Method of fabricating micro-electromechanical switches on CMOS compatible substrates
    99.
    发明授权
    Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
    在CMOS兼容基板上制造微机电开关的方法

    公开(公告)号：US06798029B2

    公开(公告)日：2004-09-28

    申请号：US10434999

    申请日：2003-05-09

    申请人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    发明人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC分类号： H01L2982

    CPC分类号： H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

    摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    摘要翻译： 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。