公开(公告)号：US07432604B2

公开(公告)日：2008-10-07

申请号：US11204264

申请日：2005-08-15

申请人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

发明人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

IPC分类号： H01L23/29

CPC分类号： H01L23/48 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49531 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/94 ,  H01L24/96 ,  H01L25/105 ,  H01L25/50 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/27

摘要： A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the component includes the steps of providing a substrate containing multiple dice, forming trenches on the substrate proximate to peripheral edges of the dice, and depositing a polymer material into the trenches. In addition, the method includes the steps of planarizing the back side of the substrate to contact the polymer filled trenches, and cutting through the polymer trenches to simulate the components from the substrate. Prior to the simulating step the components can be tested and burned-in while they remain on the substrate.

摘要翻译： 半导体部件包括在六个表面上具有保护性聚合物层的变薄的半导体管芯。 该组件还包括嵌入在电路侧聚合物层中的裸片上的接触凸块，并且密集区域阵列中接触凸块上的端子接触。 一种用于制造该部件的方法包括以下步骤：提供包含多个骰子的基底，在基底上邻近骰子的周边边缘形成沟槽，以及将聚合物材料沉积到沟槽中。 此外，该方法包括以下步骤：平坦化衬底的背面以接触聚合物填充的沟槽，并切割穿过聚合物沟槽以从衬底中分离组分。 在分离步骤之前，组分可以在它们保留在基材上时被测试和燃烧。

公开(公告)号：US07221059B2

公开(公告)日：2007-05-22

申请号：US11052378

申请日：2005-02-07

申请人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

发明人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/48 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49531 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/94 ,  H01L24/96 ,  H01L25/105 ,  H01L25/50 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/27

摘要： A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the component includes the steps of providing a substrate containing multiple dice, forming trenches on the substrate proximate to peripheral edges of the dice, and depositing a polymer material into the trenches. In addition, the method includes the steps of planarizing the back side of the substrate to contact the polymer filled trenches, and cutting through the polymer trenches to singulate the components from the substrate. Prior to the singulating step the components can be tested and burned-in while they remain on the substrate.

摘要翻译： 半导体部件包括在六个表面上具有保护性聚合物层的变薄的半导体管芯。 该组件还包括嵌入在电路侧聚合物层中的裸片上的接触凸块，并且密集区域阵列中接触凸块上的端子接触。 一种用于制造该部件的方法包括以下步骤：提供包含多个骰子的基底，在基底上邻近骰子的周边边缘形成沟槽，以及将聚合物材料沉积到沟槽中。 此外，该方法包括以下步骤：平坦化衬底的背面以接触聚合物填充的沟槽，并切割穿过聚合物沟槽以从衬底中分离组分。 在分离步骤之前，组分可以在它们保留在基材上时被测试和燃烧。

公开(公告)号：US20060154446A1

公开(公告)日：2006-07-13

申请号：US11371766

申请日：2006-03-09

申请人： Alan Wood ,  Trung Tri Doan

发明人： Alan Wood ,  Trung Tri Doan

IPC分类号： H01L21/44

CPC分类号： H01L23/3114 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05172 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184

摘要： A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed by terminal portions of the conductive members. The fabrication method includes the steps of forming the openings and the conductive members, and then thinning and etching the die to form the pin contacts. An alternate embodiment female component includes female conductive members configured to physically and electrically engage pin contacts on a mating component of a stacked assembly.

摘要翻译： 半导体部件包括使用电路侧制造方法制造的后侧引脚触点。 该部件还包括具有模接触图案的薄化半导体管芯，以及由管芯接触件和管芯中的填充开口形成的导电部件。 此外，引脚触点由导电构件的端子部分形成。 制造方法包括形成开口和导电构件的步骤，然后使模具变薄和蚀刻以形成引脚触点。 替代实施例的阴部件包括阴导电部件，其被配置为物理地和电接合堆叠组件的配合部件上的销触点。

公开(公告)号：US07056194B2

公开(公告)日：2006-06-06

申请号：US10871126

申请日：2004-06-18

申请人： Trung Tri Doan ,  Scott G. Meikle

发明人： Trung Tri Doan ,  Scott G. Meikle

IPC分类号： B24B1/00

CPC分类号： B24B37/11 ,  B23H5/08 ,  B24B37/042 ,  B24B37/046 ,  B24B37/20 ,  C25F3/30 ,  H01L21/3212 ,  H01L21/32125

摘要： The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.

公开(公告)号：US07029949B2

公开(公告)日：2006-04-18

申请号：US10719907

申请日：2003-11-21

申请人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

发明人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

IPC分类号： H01L21/50

CPC分类号： H01L23/48 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49531 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/94 ,  H01L24/96 ,  H01L25/105 ,  H01L25/50 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/27

摘要： A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the component includes the steps of providing a substrate containing multiple dice, forming trenches on the substrate proximate to peripheral edges of the dice, and depositing a polymer material into the trenches. In addition, the method includes the steps of planarizing the back side of the substrate to contact the polymer filled trenches, and cutting through the polymer trenches to singulate the components from the substrate. Prior to the singulating step the components can be tested and burned-in while they remain on the substrate.

摘要翻译： 半导体部件包括在六个表面上具有保护性聚合物层的变薄的半导体管芯。 该组件还包括嵌入在电路侧聚合物层中的裸片上的接触凸块，并且密集区域阵列中接触凸块上的端子接触。 一种用于制造该部件的方法包括以下步骤：提供包含多个骰子的基底，在基底上邻近骰子的周边边缘形成沟槽，以及将聚合物材料沉积到沟槽中。 此外，该方法包括以下步骤：平坦化衬底的背面以接触聚合物填充的沟槽，并切割穿过聚合物沟槽以从衬底中分离组分。 在分离步骤之前，组分可以在它们保留在基材上时被测试和燃烧。

公开(公告)号：US07022605B2

公开(公告)日：2006-04-04

申请号：US10293072

申请日：2002-11-12

申请人： Trung Tri Doan ,  Guy T. Blalock ,  Gurtej S. Sandhu

发明人： Trung Tri Doan ,  Guy T. Blalock ,  Gurtej S. Sandhu

IPC分类号： H01L21/44

CPC分类号： H01L21/0228 ,  C23C16/38 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/76841

摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

公开(公告)号：US07001251B2

公开(公告)日：2006-02-21

申请号：US09928173

申请日：2001-08-09

申请人： Trung Tri Doan ,  Scott E. Moore

发明人： Trung Tri Doan ,  Scott E. Moore

IPC分类号： B24B1/00

CPC分类号： B24B37/11 ,  B24B37/14 ,  B24D9/085 ,  B25B11/005

摘要： A method and apparatus for releasably attaching a planarizing medium, such as a polishing pad, to the platen of a chemical-mechanical planarization machine. In one embodiment, the apparatus can include several apertures in the upper surface of the platen that are coupled to a vacuum source. When a vacuum is drawn through the apertures in the platen, the polishing pad is drawn tightly against the platen and may therefore be less likely to wrinkle when a semiconductor substrate is engaged with the polishing pad during planarization. When the vacuum is released, the polishing pad can be easily separated from the platen. The apparatus can further include a liquid trap to separate liquid from the fluid drawn by the vacuum source through the apertures, and can also include a releasable stop to prevent the polishing pad from separating from the platen should the vacuum source be deactivated while the platen is in motion. In another embodiment, a signal can be applied to the platen to draw the polishing pad toward the platen via electrostatic or electromagnetic forces. In still another embodiment, the polishing pad can be attached to a pad support and conditioned on a separate jig.

公开(公告)号：US06977097B2

公开(公告)日：2005-12-20

申请号：US10626791

申请日：2003-07-23

申请人： Trung Tri Doan

发明人： Trung Tri Doan

IPC分类号： B01J2/00 ,  B01J12/02 ,  B01J19/12 ,  B22F1/02 ,  B22F9/28 ,  C01B13/20 ,  C01B13/34 ,  C01B21/06 ,  C01B21/076 ,  C01B33/12 ,  C01B33/18 ,  C09K3/14 ,  C23C4/12 ,  C23C8/00 ,  C23C28/00 ,  B24B1/00 ,  B01J13/02 ,  B05D5/00 ,  B05D7/00 ,  B22F1/00

CPC分类号： C23C8/00 ,  B01J2/003 ,  B01J12/02 ,  B01J19/121 ,  B01J2219/0879 ,  B01J2219/0894 ,  B22F1/025 ,  B22F9/28 ,  B22F2999/00 ,  C01B13/20 ,  C01B13/34 ,  C01B21/06 ,  C01B21/062 ,  C01B21/076 ,  C01B21/0763 ,  C01B33/126 ,  C01B33/18 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/84 ,  C09K3/1409 ,  C09K3/1463 ,  C23C4/123 ,  B22F2202/11

摘要： A particle forming method includes feeding a first set of precursors to a first energy application zone. Energy is applied to the first set of precursors in the first energy application zone effective to react and form solid particles from the first set of precursors. The application of any effective energy to the solid particles is ceased, and the solid particles and a second set of precursors are fed to a second energy application zone. Energy is applied to the second set of precursors in the second energy application zone effective to react and form solid material about the solid particles from the second set of precursors. At least one precursor is fed to at least one of the first and second energy application zones as a liquid. Other aspects are contemplated.

摘要翻译： 颗粒形成方法包括将第一组前体馈送到第一能量施加区域。 能量被施加到第一能量施加区域中的第一组前体，有效地从第一组前体反应并形成固体颗粒。 停止向固体颗粒施加任何有效能量，并将固体颗粒和第二组前体进料到第二能量施加区域。 能量被施加到第二能量施加区域中的第二组前体，其有效地从第二组前体反应并形成固体颗粒周围的固体材料。 至少一种前体作为液体被供给到第一和第二能量施加区域中的至少一个。 考虑其他方面。

公开(公告)号：US06974367B1

公开(公告)日：2005-12-13

申请号：US09717477

申请日：2000-11-20

申请人： Trung Tri Doan

发明人： Trung Tri Doan

IPC分类号： B01J2/00 ,  B01J12/02 ,  B01J19/12 ,  B22F1/02 ,  B22F9/28 ,  C01B13/20 ,  C01B13/34 ,  C01B21/06 ,  C01B21/076 ,  C01B33/12 ,  C01B33/18 ,  C09K3/14 ,  C23C4/12 ,  C23C8/00 ,  C23C28/00 ,  B24B1/00

CPC分类号： C23C8/00 ,  B01J2/003 ,  B01J12/02 ,  B01J19/121 ,  B01J2219/0879 ,  B01J2219/0894 ,  B22F1/025 ,  B22F9/28 ,  B22F2999/00 ,  C01B13/20 ,  C01B13/34 ,  C01B21/06 ,  C01B21/062 ,  C01B21/076 ,  C01B21/0763 ,  C01B33/126 ,  C01B33/18 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/84 ,  C09K3/1409 ,  C09K3/1463 ,  C23C4/123 ,  B22F2202/11

摘要： A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical mechanical polishing slurry is provided intermediate the substrate and pad. The substrate is polished with the slurry and pad during the rotating. The chemical mechanical polishing slurry includes liquid and abrasive solid components. At least some of the abrasive solid component includes individually non-homogeneous abrasive particles.

公开(公告)号：US06908784B1

公开(公告)日：2005-06-21

申请号：US10094161

申请日：2002-03-06

申请人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

发明人： Warren M. Farnworth ,  Alan G. Wood ,  Trung Tri Doan

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L21/768 ,  H01L21/78 ,  H01L23/24 ,  H01L23/31 ,  H01L23/367 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/495 ,  H01L29/06 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/48 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49531 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/94 ,  H01L24/96 ,  H01L25/105 ,  H01L25/50 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/27

摘要： A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the component includes the steps of providing a substrate containing multiple dice, forming trenches on the substrate proximate to peripheral edges of the dice, and depositing a polymer material into the trenches. In addition, the method includes the steps of planarizing the back side of the substrate to contact the polymer filled trenches, and cutting through the polymer trenches to singulate the components from the substrate. Prior to the singulating step the components can be tested and burned-in while they remain on the substrate.

摘要翻译： 半导体部件包括在六个表面上具有保护性聚合物层的变薄的半导体管芯。 该组件还包括嵌入在电路侧聚合物层中的裸片上的接触凸块，并且密集区域阵列中接触凸块上的端子接触。 一种用于制造该部件的方法包括以下步骤：提供包含多个骰子的基底，在基底上邻近骰子的周边边缘形成沟槽，以及将聚合物材料沉积到沟槽中。 此外，该方法包括以下步骤：平坦化衬底的背面以接触聚合物填充的沟槽，并切割穿过聚合物沟槽以从衬底中分离组分。 在分离步骤之前，组分可以在它们保留在基材上时被测试和燃烧。