摘要:
In one exemplary embodiment, a structure comprises a substrate having a top surface, and a die attach pad situated on the top surface of the substrate. The die attach pad includes a die attach region and at least one substrate ground pad region electrically connected to the die attach region. The die attach pad further includes a die attach stop between the die attach region and the at least one substrate ground pad region. The die attach stop acts to control and limit die attach adhesive flow out to the at least one substrate ground pad region during packaging so that the at least one substrate ground pad region can be moved closer to die attach region so that shorter bond wires for connecting the at least one substrate ground pad region to a die wire bond pad may be used during packaging.
摘要:
A process for mounting a semiconductor device and a mounting apparatus whereby electrodes of a fine-pitch semiconductor device and a wiring board can be surely connected to each other. A process for mounting a semiconductor device by electrically connecting an electrode of the semiconductor device 4 to an electrode of a wiring board by using an anisotropic conductive adhesive film having conductive particles dispersed in an insulating adhesive, which process comprising: the step of tentatively thermocompression bonding a conductive particle-free filmy insulating adhesive onto a wiring board 22 to thereby form an insulating adhesive layer 23; the step of forming a concave 23a of a predetermined size in said insulating adhesive layer 23 by using a compression bonding head 2 provided with a pressing chip 21 at a predetermined position; the step of putting in the concave 23a of said insulating adhesive layer 23 an anisotropic conductive adhesive film of a predetermined size; and the step of mounting a predetermined IC chip 11 at a predetermined position of the compression bonding head 2 and then positioning said IC chip 11 and thermocompression bonding to said wiring board 22.
摘要:
The present invention provides methods and apparatus related to preventing adhesive contamination of the electrical contacts of a semiconductor device in a stacked semiconductor device package. The methods and apparatus include providing a first semiconductor device with an adhesive flow control dam located on an upper surface thereof. The dam is positioned between electrical contacts and a substrate attach site on the upper surface of the first semiconductor device. The dam is rendered of a sufficient height and shape to block applied adhesive from flowing over the electrical contacts of the first semiconductor device when a second substrate is mounted onto the upper surface of the first semiconductor device. The semiconductor device package may be encapsulated with the dam in place or with the dam removed. The adhesive flow control dam thus protects the electrical contacts of the first semiconductor device from contamination by excess adhesive, which can result in unusable electrical contacts.
摘要:
An adhesive composition for bonding semiconductor chips to their chip mounting components comprising a curable polymer composition comprising from 1 to 900 weight-ppm spherical filler having an average particle size of from 10 to 100 &mgr;m and a major axis-to-minor axis ratio of from 1 to 1.5. Also, semiconductor devices in which a semiconductor chip therein is bonded to its chip mounting component by the aforesaid adhesive composition.
摘要:
A unit includes one or more semiconductor chips. Each chip has a front surface with a plurality of contacts surrounded by a passivated surface. The passivated surface is not wettable by bonding material. The contacts have masses of bonding material thereon and the masses have a height less than the diameter of the contacts.
摘要:
A resin-sealed semiconductor device includes a metallic plate and a semiconductor element soldered thereto. The metallic plate has a semiconductor element mounting region formed on one surface thereof and a plurality of squared recesses defined lengthwise and crosswise in the one surface at approximately regular intervals at locations other than the semiconductor element mounting region.
摘要:
An ultra thin semiconductor device has a lead frame for holding a chip and an encapsulant sealing the chip and the lead frame. The lead frame has a die pad and multiple leads for wire bonding with the chip. A die recess to hold the chip is defined in the die pad. A depth of the die recess decreases a total height of the chip and the die pad to provide the wires enough bonding space. That is, the semiconductor device easily has a 0.4 mm thickness to be an ultra thin semiconductor product.
摘要:
A micro leadframe package employing an oblique etching method is disclosed. The micro leadframe package includes a semiconductor chip, an oblique-etched micro leadframe (MLF) having a die pad on which the semiconductor chip is mounted via adhesive means, leads formed along outer sides of the die pad, and tie bars for supporting four corners of the die pad, wires for connecting the semiconductor chip with the leads of the MLF, and an epoxy molding compound (EMC) for encapsulating the semiconductor chip, the MLF, and the wires.
摘要:
Wiring electrodes are formed on a first principal surface of a base substrate. An insulation film partially covers the first principal surface of the base substrate and the wiring electrodes. The insulation film has opening portions where the base substrate and the wiring electrodes are not coated with the insulation film. An electronic component having bump electrodes is mounted on the mounting board by connecting the bump electrodes with the wiring electrodes in the opening portions. A gap between the first principal surface of the base substrate and the electronic component is filled with sealing resin. The opening portions are substantially orthogonal to the longitudinal direction of the wiring electrodes. The ratio of the minimum width of a portion of the base substrate exposed at each of the opening portions to the thickness of the insulation film may advantageously be greater than or equal to 2.
摘要:
A Microelectronic Bonding processes wherein a microelectronic element is connected with a connection component having a polymeric body, and a bonding material is provided between contacts on the microelectronic element and conductive features of the connection component. The microelectronic element is heated so as to activate the bonding material, and then cooled, leaving said contacts on said microelectronic element bonded to said conductive features on the connection component. The connection component is maintained at an average temperature below the glass transition temperature of the polymer in the connection component during the heating and cooling steps.