利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

177 条记录 (耗时 0.038 秒)

    Ultrasonic sensor
    101.
    发明授权
    Ultrasonic sensor 有权
    超声波传感器

    公开(公告)号：US08098000B2

    公开(公告)日：2012-01-17

    申请号：US12230039

    申请日：2008-08-21

    申请人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

    发明人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

    IPC分类号： H01L41/08

    CPC分类号： G01S7/521

    摘要： An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.

    摘要翻译： 一种用于检测物体的超声波传感器包括：具有压电体的压电元件和用于夹持压电体的第一和第二电极; 具有接收表面的声匹配元件，其接收由所述物体反射的超声波; 以及经由导线与压电元件电耦合的电路。 压电元件被嵌入在声匹配元件中，使得声匹配元件至少覆盖第一电极，压电元件的侧壁的一部分和电路与压电元件之间的线的一部分，以及侧壁 压电元件与第一电极相邻。

    Semiconductor device having multiple element formation regions and manufacturing method thereof
    105.
    发明授权
    Semiconductor device having multiple element formation regions and manufacturing method thereof 有权
    具有多个元件形成区域的半导体器件及其制造方法

    公开(公告)号：US07833876B2

    公开(公告)日：2010-11-16

    申请号：US12230209

    申请日：2008-08-26

    申请人： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

    发明人： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76264 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.

    摘要翻译： 在半导体器件的制造中，在具有主侧和后侧的基板的元件形成区域中的至少一个元件形成区域中形成至少一个元件，并且通过从基板的后侧抛光基板而使基板变薄 在衬底的后侧形成多个沟槽，使得每个沟槽到达衬底的主侧。 之后，绝缘材料沉积在每个沟槽的内表面上，以在沟槽中形成绝缘层，使得元件形成区域被隔离。 由此，可以抑制基板的裂纹和结构的产生，并且能够抑制元件形成区域与基板的分离。

    Semiconductor device and method of making the same
    106.
    发明申请
    Semiconductor device and method of making the same 有权
    半导体器件及其制造方法

    公开(公告)号：US20100176466A1

    公开(公告)日：2010-07-15

    申请号：US12654902

    申请日：2010-01-07

    申请人： Tetsuo Fujii ,  Masaki Inoue

    发明人： Tetsuo Fujii ,  Masaki Inoue

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： G01P15/0802 ,  B81B7/007 ,  B81B7/02 ,  B81B2207/092 ,  B81B2207/095 ,  G01P1/023 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  H01L27/14601 ,  H01L27/148

    摘要： A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.

    摘要翻译： 半导体器件包括传感器部件和盖部件。 传感器构件具有表面并且包括第一感测部分。 第一感测部分包括位于传感器部件的表面侧并彼此电绝缘的第一和第二部分。 盖构件具有表面并且包括交叉布线部分。 盖构件的表面以传感器构件和帽构件密封第一感测部分的方式接合到传感器构件的表面。 十字布线部分将第一部分电连接到第二部分。

    Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
    108.
    发明授权
    Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface 有权
    高效率的III族氮化物基发光二极管通过在N面表面上制造结构

    公开(公告)号：US07704763B2

    公开(公告)日：2010-04-27

    申请号：US10581940

    申请日：2003-12-09

    申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

    发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

    摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

    摘要翻译： 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

    EPITAXIAL GROWTH METHOD, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE
    109.
    发明申请
    EPITAXIAL GROWTH METHOD, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE 有权
    外延生长方法，外延晶体结构，外延晶体生长装置和半导体器件

    公开(公告)号：US20100006836A1

    公开(公告)日：2010-01-14

    申请号：US12493765

    申请日：2009-06-29

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Tetsuo Fujii ,  Naoki Yoshii

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Tetsuo Fujii ,  Naoki Yoshii

    IPC分类号： H01L29/12 ,  H01L21/04 ,  C30B25/02 ,  C23C16/06

    CPC分类号： C23C16/407 ,  C23C16/0272 ,  C30B25/183 ,  C30B25/20 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/22

    摘要： It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate. It is provided a ZnO based semiconductor, a fabrication method for a ZnO based semiconductor, and an apparatus for fabricating a ZnO based semiconductor, and the method includes introducing reactant gas mixing halogenated group II metallic gas including zinc and oxygen containing gas on one of a substrate and a semiconductor layer; and introducing hydride gas of group V as p type impurity material gas on one of the substrate and the semiconductor layer, wherein crystal growth of the zinc oxide based semiconductor layer doped with a p type impurity is performed on one of the substrate and the semiconductor layer, preventing mixing of the impurity which is not aimed and doping a p type impurity enough also at high temperature.

    摘要翻译： 提供了异质外延生长方法，异质外延晶体结构，异质外延生长装置和半导体器件，该方法包括形成由氧化物的取向膜形成的缓冲层或在异质外延生长方法上的氮化物取向膜 基质; 并且使用卤化II族金属和氧材料在缓冲层上进行氧化锌基半导体层的晶体生长。 提供同质外延生长方法，同质外延晶体结构，同质外延生长装置和半导体器件，同质外延生长方法包括将含有锌的气体和含氧气体的反应气体引入到氧化锌衬底上; 并且在氧化锌衬底上进行氧化锌基半导体层的晶体生长。 提供了一种ZnO基半导体，一种用于ZnO基半导体的制造方法和一种用于制造ZnO基半导体的装置，该方法包括将包含锌和含氧气体的卤化II族金属气体混合在一起的反应气体 衬底和半导体层; 并且在基板和半导体层之一上引入第V族氢化物气体作为p型杂质材料气体，其中在衬底和半导体层之一上进行掺杂有p型杂质的氧化锌基半导体层的晶体生长， 防止在高温下混入不是目标的杂质和掺杂的p型杂质。