公开(公告)号：US20180159302A1

公开(公告)日：2018-06-07

申请号：US15820160

申请日：2017-11-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/40 ,  H01S5/323 ,  H01L33/00 ,  H01L23/00 ,  H01S5/02

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US20180059525A1

公开(公告)日：2018-03-01

申请号：US15796568

申请日：2017-10-27

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: G03B21/20 ,  F21S8/10 ,  H01S5/343 ,  H04N9/31 ,  H04N13/04 ,  F21K9/64

CPC classification number: G03B21/2066 ,  F21K9/64 ,  F21S41/14 ,  F21S41/16 ,  G03B21/2033 ,  G03B21/204 ,  H01S5/0071 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4093 ,  H04N9/3129 ,  H04N9/3161 ,  H04N13/334 ,  H04N13/337 ,  H04N13/363

Abstract: The present invention is directed to a laser light source for a vehicle.

公开(公告)号：US09887517B1

公开(公告)日：2018-02-06

申请号：US15289914

申请日：2016-10-10

Applicant: SORAA LASER DIODE, INC.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/227 ,  H01S5/22 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US09871350B2

公开(公告)日：2018-01-16

申请号：US15180737

申请日：2016-06-13

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01L21/00 ,  H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/22

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US09810383B2

公开(公告)日：2017-11-07

申请号：US14743878

申请日：2015-06-18

Applicant: Soraa Laser Diode, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: H01S5/022 ,  F21K99/00 ,  G02B6/27 ,  H01S5/00 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  B82Y20/00 ,  G02B6/42 ,  F21V29/71 ,  F21V29/83 ,  F21V9/16 ,  F21V23/06 ,  F21V8/00 ,  H01S5/323 ,  F21K9/62 ,  F21K9/64 ,  G02B6/26 ,  H01S5/028 ,  H01S5/042 ,  F21Y115/30 ,  F21Y115/10 ,  F21Y101/00

CPC classification number: F21K9/60 ,  B82Y20/00 ,  F21K9/62 ,  F21K9/64 ,  F21V9/30 ,  F21V23/06 ,  F21V29/713 ,  F21V29/83 ,  F21Y2101/00 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B6/0005 ,  G02B6/26 ,  G02B6/27 ,  G02B6/4214 ,  G02B6/4249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0092 ,  H01S5/02208 ,  H01S5/02224 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4056 ,  H01S2301/14 ,  H01S2304/04

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

公开(公告)号：US09762032B1

公开(公告)日：2017-09-12

申请号：US15218690

申请日：2016-07-25

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L29/20 ,  H01L21/20 ,  H01S5/343 ,  H01S5/32 ,  H01S5/042 ,  H01S5/028 ,  H01S5/02

CPC classification number: H01S5/34333 ,  H01L24/29 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/50 ,  H01S5/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202

Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

公开(公告)号：US09722398B2

公开(公告)日：2017-08-01

申请号：US14736939

申请日：2015-06-11

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Daniel F. Feezell ,  Nicholas J. Pfister ,  Rajat Sharma ,  Mathew C. Schmidt ,  Christiane Poblenz Elsass ,  Yu-Chia Chang

IPC: H01L21/00 ,  H01S5/22 ,  H01S5/02 ,  H01S5/028 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/02

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/34333

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

公开(公告)号：US09716369B1

公开(公告)日：2017-07-25

申请号：US15047494

申请日：2016-02-18

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/34333 ,  H01S5/4012

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

公开(公告)号：US09368939B2

公开(公告)日：2016-06-14

申请号：US14559149

申请日：2014-12-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/00 ,  H01S5/022 ,  H01S5/20 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US09356430B2

公开(公告)日：2016-05-31

申请号：US14754043

申请日：2015-06-29

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring

IPC: H01S5/00 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/02 ,  H01S5/028 ,  H01S5/20 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/4025

Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.