DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD

    公开(公告)号:US20240282583A1

    公开(公告)日:2024-08-22

    申请号:US18568637

    申请日:2022-06-02

    IPC分类号: H01L21/311

    CPC分类号: H01L21/31122

    摘要: Provided is a dry etching method capable of selectively etching an etching object containing lanthanum as compared with a non-etching object at a sufficient etching rate without plasma. The dry etching method includes a dry etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object that is to be etched by the etching gas and having a non-etching object that is not to be etched by the etching gas, to selectively etch the etching object as compared with the non-etching object without plasma. The etching object contains lanthanum.