专利检索 ap:"Michael Z. Su" 第 2 页

11.

发明申请
INTEGRATED CIRCUIT PACKAGE HAVING OFFSET VIAS 有权
标题翻译：集成电路包装有偏差VIAS

公开(公告)号：US20130341802A1

公开(公告)日：2013-12-26

申请号：US13532126

申请日：2012-06-25

申请人： Michael Z. Su , Fu Lei , Frank Kuechenmeister

发明人： Michael Z. Su , Fu Lei , Frank Kuechenmeister

IPC分类号： H01L23/528 , H01L21/768

CPC分类号： H01L23/3192 , H01L21/76804 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/03462 , H01L2224/0401 , H01L2224/05558 , H01L2224/05572 , H01L2224/056 , H01L2224/0603 , H01L2224/06051 , H01L2224/06131 , H01L2224/06141 , H01L2224/11462 , H01L2224/11472 , H01L2224/11474 , H01L2224/1148 , H01L2224/13017 , H01L2224/13022 , H01L2224/13027 , H01L2224/13111 , H01L2224/13147 , H01L2224/1403 , H01L2224/14051 , H01L2224/14104 , H01L2224/14131 , H01L2224/16237 , H01L2224/73204 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/15311 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552 , H01L2224/03 , H01L2224/11

摘要： Integrated circuit packages comprise vias, each of which extends from a pad in communication with an integrated circuit on a semiconductor chip through insulating material overlying the semiconductor chip to an attachment surface facing a substrate. The portion of each via proximate the attachment surface is laterally offset from the portion proximate the pad from which it extends in a direction away from the centre of the semiconductor chip. Metallic material received in the vias mechanically and electrically interconnects the semiconductor chip to the substrate.

摘要翻译： 集成电路封装包括通孔，每个通孔从与半导体芯片上的集成电路通信的焊盘延伸通过覆盖半导体芯片的绝缘材料到面向衬底的附接表面。每个通孔的靠近附接表面的部分从靠近焊盘的部分横向偏移，从该部分沿着该部分沿远离半导体芯片的中心的方向延伸。通孔中容纳的金属材料将半导体芯片机械地电连接到基板。

12.

发明授权
Stacked semiconductor chip device with thermal management 有权
标题翻译：堆叠的半导体芯片器件具有热管理功能

公开(公告)号：US08472190B2

公开(公告)日：2013-06-25

申请号：US12889590

申请日：2010-09-24

申请人： Gamal Refai-Ahmed , Bryan Black , Michael Z. Su

发明人： Gamal Refai-Ahmed , Bryan Black , Michael Z. Su

IPC分类号： H05H7/20

CPC分类号： H01L25/0657 , H01L23/13 , H01L23/42 , H01L23/49816 , H01L23/49827 , H01L25/0652 , H01L2023/4062 , H01L2224/1403 , H01L2224/141 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32245 , H01L2224/73253 , H01L2224/81192 , H01L2224/83192 , H01L2224/92225 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/01322 , H01L2924/15151 , H01L2924/15311 , H01L2924/15321 , H05K1/0204 , H05K1/141 , H05K1/181 , H05K2201/09072 , H05K2201/10378 , H05K2201/10416 , H05K2201/10515 , H05K2201/1056

摘要： A method of manufacturing is provided that includes placing a thermal management device in thermal contact with a first semiconductor chip of a semiconductor chip device. The semiconductor chip device includes a first substrate coupled to the first semiconductor chip. The first substrate has a first aperture. At least one of the first semiconductor chip and the thermal management device is at least partially positioned in the first aperture.

摘要翻译： 提供了一种制造方法，其包括将热管理装置放置成与半导体芯片装置的第一半导体芯片热接触。半导体芯片器件包括耦合到第一半导体芯片的第一衬底。第一基板具有第一孔。第一半导体芯片和热管理装置中的至少一个至少部分地位于第一孔中。

13.

发明授权
Semiconductor chip with reinforcing through-silicon-vias 有权

公开(公告)号：US08193039B2

公开(公告)日：2012-06-05

申请号：US12889615

申请日：2010-09-24

申请人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black

发明人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black

IPC分类号： H01L21/00

CPC分类号： H01L23/585 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/49816 , H01L23/60 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/351 , H01L2224/81 , H01L2924/00

摘要： A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.

14.

发明申请
SEMICONDUCTOR CHIP DEVICE WITH LIQUID THERMAL INTERFACE MATERIAL 有权
标题翻译：具有液体热界面材料的半导体芯片器件

公开(公告)号：US20120098119A1

公开(公告)日：2012-04-26

申请号：US12910379

申请日：2010-10-22

申请人： Gamal Refai-Ahmed , Michael Z. Su , Bryan Black

发明人： Gamal Refai-Ahmed , Michael Z. Su , Bryan Black

IPC分类号： H01L23/373 , H01L25/11 , H01L21/54

CPC分类号： H01L23/22 , H01L21/54 , H01L23/42 , H01L23/473 , H01L25/115 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/00

摘要： A method of manufacturing is provided that includes providing a semiconductor chip device that has a circuit board and a first semiconductor chip coupled thereto. A lid is placed on the circuit board. The lid includes an opening and an internal cavity. A liquid thermal interface material is placed in the internal cavity for thermal contact with the first semiconductor chip and the circuit board.

摘要翻译： 提供了一种制造方法，其包括提供具有电路板和与其耦合的第一半导体芯片的半导体芯片器件。盖子放在电路板上。盖子包括开口和内部空腔。液体热界面材料放置在内腔中，用于与第一半导体芯片和电路板热接触。

15.

发明申请
SEMICONDUCTOR CHIP WITH OFFSET PADS 有权
标题翻译：半导体芯片与偏心垫

公开(公告)号：US20120038061A1

公开(公告)日：2012-02-16

申请号：US12856632

申请日：2010-08-14

申请人： Michael Z. Su , Gamal Rafai-Ahmed , Bryan Black

发明人： Michael Z. Su , Gamal Rafai-Ahmed , Bryan Black

IPC分类号： H01L23/58 , H01L21/00

CPC分类号： H01L23/49827 , H01L23/49816 , H01L23/49894 , H01L24/11 , H01L24/14 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/1132 , H01L2224/1146 , H01L2224/1147 , H01L2224/13082 , H01L2224/13099 , H01L2224/1403 , H01L2224/1414 , H01L2224/14143 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2225/06513 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/3511 , H01L2924/00014 , H01L2924/00

摘要： A semiconductor chip device includes a first semiconductor chip adapted to be stacked with a second semiconductor chip wherein the second semiconductor chip includes a side and first and second conductor structures projecting from the side. The first semiconductor chip includes a first edge, a first conductor pad, a first conductor pillar positioned on but laterally offset from the first conductor pad toward the first edge and that has a first lateral dimension and is adapted to couple to one of the first and second conductor structures, a second conductor pad positioned nearer the first edge than the first conductor pad, and a second conductor pillar positioned on but laterally offset from the second conductor pad and that has a second lateral dimension larger than the first lateral dimension and is adapted to couple to the other of the first and second conductor structures.

摘要翻译： 一种半导体芯片器件包括适于与第二半导体芯片堆叠的第一半导体芯片，其中第二半导体芯片包括侧面以及从侧面突出的第一和第二导体结构。第一半导体芯片包括第一边缘，第一导体焊盘，第一导体柱，其位于第一导体焊盘朝向第一边缘但横向偏移并且具有第一横向尺寸并且适于耦合到第一和第第二导体结构，位于比第一导体焊盘更靠近第一边缘的第二导体焊盘，以及定位在第二导体焊盘但是横向偏离第二导体焊盘并且具有大于第一横向尺寸的第二横向尺寸的第二导体柱，并且适于耦合到第一和第二导体结构中的另一个。

16.

发明申请
Electrical Insulating Layer for Metallic Thermal Interface Material 审中-公开
标题翻译：金属热界面材料电绝缘层

公开(公告)号：US20080124840A1

公开(公告)日：2008-05-29

申请号：US11461305

申请日：2006-07-31

申请人： Michael Z. Su

发明人： Michael Z. Su

IPC分类号： H01L21/62

CPC分类号： C23C28/00 , C23C28/322 , C23C28/34 , C23C28/345 , H01L23/055 , H01L23/3675 , H01L23/3736 , H01L24/97 , H01L2224/16 , H01L2224/73253 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/16152 , H01L2924/19041

摘要： Various semiconductor devices and method of manufacturing the same are provided. In one aspect, a method of manufacturing is provided that includes forming an insulating layer on a backside of a semiconductor chip and forming a metallic thermal interface material on the insulating layer. In another aspect, an integrated circuit is provided that includes a semiconductor chip that has a front side and a backside. An insulating layer is on the backside and a metallic thermal interface material is on the insulating layer.

摘要翻译： 提供各种半导体器件及其制造方法。一方面，提供一种制造方法，包括在半导体芯片的背面形成绝缘层，并在绝缘层上形成金属热界面材料。另一方面，提供一种集成电路，其包括具有前侧和后侧的半导体芯片。绝缘层位于背面，金属热界面材料位于绝缘层上。

17.

发明授权
Semiconductor workpiece with selective backside metallization 有权

公开(公告)号：US09793239B2

公开(公告)日：2017-10-17

申请号：US14865816

申请日：2015-09-25

申请人： Michael Z. Su , Michael S. Alfano , Bryan Black

发明人： Michael Z. Su , Michael S. Alfano , Bryan Black

IPC分类号： H01L21/66 , H01L25/065 , H01L21/768 , H01L23/367 , H01L25/00 , H01L23/498 , H01L23/528 , H01L21/78

CPC分类号： H01L25/0652 , H01L21/768 , H01L21/78 , H01L22/20 , H01L23/3675 , H01L23/49838 , H01L23/528 , H01L25/50 , H01L2225/06589

摘要： Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.

18.

发明申请
SEMICONDUCTOR WORKPIECE WITH SELECTIVE BACKSIDE METALLIZATION 有权

公开(公告)号：US20170092616A1

公开(公告)日：2017-03-30

申请号：US14865816

申请日：2015-09-25

申请人： Michael Z. Su , Michael S. Alfano , Bryan Black

发明人： Michael Z. Su , Michael S. Alfano , Bryan Black

IPC分类号： H01L25/065 , H01L21/66 , H01L21/78 , H01L25/00 , H01L23/498 , H01L23/528 , H01L21/768 , H01L23/367

CPC分类号： H01L25/0652 , H01L21/768 , H01L21/78 , H01L22/20 , H01L23/3675 , H01L23/49838 , H01L23/528 , H01L25/50 , H01L2225/06589

摘要： Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.