公开(公告)号：US20180277384A1

公开(公告)日：2018-09-27

申请号：US15467866

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/3205 ,  H01L21/67 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/31058 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/32051

Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US20180080124A1

公开(公告)日：2018-03-22

申请号：US15269405

申请日：2016-09-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika Bajaj ,  Ranga Rao Arnepalli ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: C23C16/455 ,  C23C16/52 ,  C23F1/08

CPC classification number: C23C16/45565 ,  C09K13/00 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45591 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/32137

Abstract: Systems and methods for selectively etching and depositing material on the surface of a substrate are described. Systems for atomic layer etching (ALE) and atomic layer deposition (ALD) are described which enable alternating exposure to a first precursor and then a second precursor. The substrate processing region is configured to process large surface area substrate (e.g. 300 mm wafers) without requiring direct line-of-sight pathways between the gas inlet into the substrate processing chamber and all portions of the substrate. No plasma excites either of the two precursors either remotely or locally in embodiments. A quartz crystal microbalance is placed close to the substrate pedestal to quantify deposition and etching rates. Only thermal energy from the substrate is used to get the chemical reactions to proceed according to embodiments.

公开(公告)号：US09673042B2

公开(公告)日：2017-06-06

申请号：US14842806

申请日：2015-09-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Robert Jan Visser ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/02271 ,  C23C16/0227 ,  C23C16/0236 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02043 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76883

Abstract: A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.

公开(公告)号：US20170137937A1

公开(公告)日：2017-05-18

申请号：US15286234

申请日：2016-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: C23C16/448 ,  H01L21/02 ,  H01L21/311 ,  C23F1/08

CPC classification number: C23C16/4486 ,  H01L21/02107 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/465

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US10515927B2

公开(公告)日：2019-12-24

申请号：US15634012

申请日：2017-06-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: H01L21/48 ,  H01L23/00 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/56

Abstract: A fan-out process using chemical mechanical planarization (CMP) reduces the step-height between a semiconductor die and the surrounding overmolding of a reconstituted wafer. The reconstituted wafer is formed by overmolding a back side of at least one die that is placed with an active side facing down. The reconstituted wafer is then oriented to expose the die and the active side. A polymer layer is then formed over the reconstituted wafer. A CMP process then removes a portion of the polymer layer until a certain thickness above the die surface is obtained, reducing the step-height between the polymer layer on top of the die surface and the polymer layer on the adjacent mold compound surface. The CMP process can also be performed after a subsequent redistribution layer is formed on the reconstituted wafer.

公开(公告)号：US10273577B2

公开(公告)日：2019-04-30

申请号：US15286234

申请日：2016-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: B44C1/22 ,  C23C16/448 ,  H01L21/02 ,  H01L21/311

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US20180226278A1

公开(公告)日：2018-08-09

申请号：US15425231

申请日：2017-02-06

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Nitin Ingle ,  Mikhail Korolik ,  Jayeeta Biswas ,  Saurabh Lodha

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/67069 ,  H01L21/02244 ,  H01L21/31122

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20170298252A1

公开(公告)日：2017-10-19

申请号：US15508359

申请日：2015-10-09

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Rajeev Bajaj ,  Darshan Thakare ,  Prerna Goradia ,  Uday Mahajan ,  Abdul Wahab Mohammed

IPC: C09G1/02 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C01B33/149 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2004/88 ,  C09K3/1436 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/31053

Abstract: A slurry for chemical mechanical planarization includes a surfactant, and abrasive particles having an average diameter between 20 and 30 nm and an outer surface of ceria. The abrasive particles are formed using a hydrothermal synthesis process. The abrasive particles are between 0.1 and 3 wt % of the slurry.

公开(公告)号：US20170140920A1

公开(公告)日：2017-05-18

申请号：US15045081

申请日：2016-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: H01L21/02 ,  C23C16/448 ,  H01L21/3065

CPC classification number: H01L21/0262 ,  C23C16/045 ,  C23C16/4486 ,  C23C16/45525 ,  H01L21/02107 ,  H01L21/0228 ,  H01L21/02521 ,  H01L21/30621 ,  H01L21/32 ,  H01L21/465

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US11980992B2

公开(公告)日：2024-05-14

申请号：US17946547

申请日：2022-09-16

Applicant: Applied Materials, Inc.

Inventor： Ashavani Kumar ,  Ashwin Chockalingam ,  Sivapackia Ganapathiappan ,  Rajeev Bajaj ,  Boyi Fu ,  Daniel Redfield ,  Nag B. Patibandla ,  Mario Dagio Cornejo ,  Amritanshu Sinha ,  Yan Zhao ,  Ranga Rao Arnepalli ,  Fred C. Redeker

IPC: B24B37/24 ,  B24B37/16 ,  B24B37/20 ,  B24B37/26 ,  B24D11/04 ,  B24D18/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y80/00 ,  H01L21/306

CPC classification number: B24B37/245 ,  B24B37/26 ,  B24D11/04 ,  B24D18/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y80/00 ,  B24B37/16 ,  B24B37/20 ,  B24D2203/00 ,  B33Y30/00 ,  H01L21/30625

Abstract: Embodiments described herein relate to integrated abrasive (IA) polishing pads, and methods of manufacturing IA polishing pads using, at least in part, surface functionalized abrasive particles in an additive manufacturing process, such as a 3D inkjet printing process. In one embodiment, a method of forming a polishing article includes dispensing a first plurality of droplets of a first precursor, curing the first plurality of droplets to form a first layer comprising a portion of a sub-polishing element, dispensing a second plurality of droplets of the first precursor and a second precursor onto the first layer, and curing the second plurality of droplets to form a second layer comprising portions of the sub-polishing element and portions of a plurality of polishing elements. Here, the second precursor includes functionalized abrasive particles having a polymerizable group chemically bonded to surfaces thereof.