Abstract:
The present disclosure relates to the field of microelectronic die packaging, particularly multi-chip packaging, wherein on-substrate modularity is enabled by using in-street die-to-die interconnects to facilitate signal routing between microelectronic dice. These in-street die-to-die interconnects may allow for manufacturing of several products on a single microelectronic substrate, which may lead to improved microelectronic die and/or microelectronic module harvesting and increased product yields.
Abstract:
A method of manufacturing an inductor for a microelectronic device comprises providing a substrate (610), forming a first plurality of inductor windings (111, 211, 411, 620, 2030) over the substrate, forming a magnetic inductor core (112, 212, 412, 810) over the first plurality of inductor windings, and forming a second plurality of inductor windings (113, 213, 413, 1010) over the magnetic inductor core. In another embodiment, the method comprises forming the inductor on a sacrificial substrate (1610) such that the inductor can subsequently be mounted onto a carrier tape (1810). In yet another embodiment, a method of manufacturing a substrate for a microelectronic device comprises forming an inductor within a build-up layer (101, 102, 103, 104) of a substrate.
Abstract:
A method of manufacturing an inductor for a microelectronic device comprises providing a substrate (610), forming a first plurality of inductor windings (111, 211, 411, 620, 2030) over the substrate, forming a magnetic inductor core (112, 212, 412, 810) over the first plurality of inductor windings, and forming a second plurality of inductor windings (113, 213, 413, 1010) over the magnetic inductor core. In another embodiment, the method comprises forming the inductor on a sacrificial substrate (1610) such that the inductor can subsequently be mounted onto a carrier tape (1810). In yet another embodiment, a method of manufacturing a substrate for a microelectronic device comprises forming an inductor within a build-up layer (101, 102, 103, 104) of a substrate.
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a first HOD layer on a first side of a first silicon substrate, forming a CMOS region on a second side of the silicon substrate, forming amorphous silicon on the CMOS region, recrystallizing the amorphous silicon to form a first single crystal silicon layer, and forming a second HOD layer on the first single crystal silicon layer.
Abstract:
A circuit interconnect may be used in biometric data sensing and feedback applications. A circuit interconnect may be used in device device-to-device connections (e.g., Internet of Things (IoT) devices), including applications that require connection between stretchable and rigid substrates. A circuit interconnect may include a multi-pin, snap-fit attachment mechanism, where the attachment mechanism provides an electrical interconnection between a rigid substrate and a flexible or stretchable substrate. The combination of a circuit interconnect and flexible or stretchable substrate provides improved electrical connection reliability, allows for greater stretchability and flexibility of the circuit traces, and allows for more options in connecting a stretchable circuit trace to a rigid PCB.
Abstract:
Some forms relate to a stretchable computing display device. The stretchable computing display device includes a stretchable base; a patterned conductive section mounted on the stretchable base, wherein the patterned conductive section includes a first portion and a second portion that is electrically isolated from the first portion; an electroluminescent material mounted on the stretchable base such that the electroluminescent material is between the first portion and the second portion of the patterned conductive section; an encapsulant that covers at least a portion of the patterned conductive section; and a textile such that the stretchable base is mounted on the textile, wherein the textile is part of a garment.
Abstract:
Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.
Abstract:
Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.
Abstract:
The present description relates to the field of fabricating microelectronic assemblies, wherein a microelectronic device may be attached to a microelectronic substrate with a plurality of shaped and oriented solder joints. The shaped and oriented solder joints may be substantially oval, wherein the major axis of the substantially oval solder joints may be substantially oriented toward a neutral point or center of the microelectronic device. Embodiments of the shaped and oriented solder joint may reduce the potential of solder joint failure due to stresses, such as from thermal expansion stresses between the microelectronic device and the microelectronic substrate.
Abstract:
A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).