公开(公告)号：US08691377B2

公开(公告)日：2014-04-08

申请号：US13259009

申请日：2010-04-22

申请人： Taichi Nakamura ,  Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Takahiro Matsuo

发明人： Taichi Nakamura ,  Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Takahiro Matsuo

IPC分类号： H01L23/488

CPC分类号： H01L21/563 ,  H01L23/3733 ,  H01L23/3736 ,  H01L23/49568 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29213 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  Y10T428/25 ,  Y10T428/256 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.

摘要翻译： 本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料 第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。 在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％ 中心部分。

公开(公告)号：US08598464B2

公开(公告)日：2013-12-03

申请号：US12999411

申请日：2010-04-19

申请人： Shigeaki Sakatani ,  Akio Furusawa ,  Kenichiro Suetsugu ,  Taichi Nakamura

发明人： Shigeaki Sakatani ,  Akio Furusawa ,  Kenichiro Suetsugu ,  Taichi Nakamura

IPC分类号： H05K1/16 ,  B23K31/00 ,  C22C13/02

CPC分类号： H05K3/3463 ,  B23K35/262 ,  B23K2101/36 ,  B32B15/01 ,  C22C13/00 ,  H05K3/3442 ,  H05K2201/10992 ,  Y02P70/613

摘要： A solder material includes 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part of an electronic component is connected to a copper-containing electrode land of a substrate by using this solder material, a part having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound can be rapidly grown from the electrode land and the electrode part to form a strong blocking structure.

摘要翻译： 焊料材料包括1.0-4.0重量％的Ag，4.0-6.0重量％的In，0.1-1.0重量％的Bi，1重量％以下（不包括0重量％）的1个或 选自由Cu，Ni，Co，Fe和Sb组成的组中的更多元素，以及Sn的剩余部分。 当通过使用该焊料将电子部件的含铜电极部分连接到基板的含铜电极焊盘时，可以在焊料连接部分中形成具有优异的应力松弛特性的部分， Sn金属间化合物可以从电极焊盘和电极部分快速生长，形成强阻挡结构。

公开(公告)号：US08450859B2

公开(公告)日：2013-05-28

申请号：US13000391

申请日：2009-10-27

申请人： Naomichi Ohashi ,  Shigeaki Sakatani ,  Arata Kishi ,  Atsushi Yamaguchi ,  Hidenori Miyakawa

发明人： Naomichi Ohashi ,  Shigeaki Sakatani ,  Arata Kishi ,  Atsushi Yamaguchi ,  Hidenori Miyakawa

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49894 ,  H01L21/563 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13566 ,  H01L2224/16058 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/3436 ,  H05K3/3452 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/10977 ,  H05K2201/10992 ,  Y02P70/613 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/0105

摘要： A semiconductor device mounted structure includes a semiconductor device having a plurality of first electrodes, a circuit board having a plurality of second electrodes, a plurality of bumps respectively formed on the plurality of first electrodes, a plurality of bonding members respectively positioned between the bumps and the second electrodes to electrically connect the first electrodes to the second electrodes via the bumps, and a plurality of reinforcing resin members respectively positioned around the bonding members so as to cover at least the bonding members and bonding regions between the bonding members and the bumps. Adjacent reinforcing resin members are spaced away from each other so as not to have contact with each other without being in contact with the semiconductor device. This semiconductor device mounted structure enhances the reliability of joints in impact resistance and makes it easy to repair it.

摘要翻译： 半导体器件安装结构包括具有多个第一电极的半导体器件，具有多个第二电极的电路板，分别形成在多个第一电极上的多个凸块，分别位于凸块之间的多个接合部件和 所述第二电极经由所述凸块将所述第一电极与所述第二电极电连接，以及分别位于所述接合部件周围的多个增强树脂部件，以至少覆盖所述接合部件和所述凸块之间的接合部件和接合部。 相邻的增强树脂构件彼此间隔开，以便不与半导体器件接触而彼此不接触。 该半导体器件安装结构提高了接头在耐冲击性方面的可靠性，并且使其易于修复。

公开(公告)号：US08268718B2

公开(公告)日：2012-09-18

申请号：US13007693

申请日：2011-01-17

申请人： Taichi Nakamura ,  Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Takahiro Matsuo

发明人： Taichi Nakamura ,  Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Takahiro Matsuo

IPC分类号： H01L21/44

CPC分类号： H01L24/29 ,  H01L23/49513 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29313 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01034 ,  H01L2924/3512 ,  H01L2924/01028 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.

摘要翻译： 一种接合结构的制造方法，其中半导体器件通过接合部分接合到电极上，所述方法包括：首先将其中Bi球的表面涂覆有Ni镀层的焊球安装在电极上 加热到等于或大于Bi的熔点的温度; 第二次将焊球压在加热电极上，破裂Ni镀层，将熔融的Bi扩散到加热电极的表面，并形成含有Bi和Ni的Bi基金属间化合物的接合材料; 并且第三将半导体器件安装在接合材料上。

公开(公告)号：US20120018890A1

公开(公告)日：2012-01-26

申请号：US13259009

申请日：2010-04-22

申请人： Taichi Nakamura ,  Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Takahiro Matsuo

发明人： Taichi Nakamura ,  Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Takahiro Matsuo

IPC分类号： H01L23/488

CPC分类号： H01L21/563 ,  H01L23/3733 ,  H01L23/3736 ,  H01L23/49568 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29213 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  Y10T428/25 ,  Y10T428/256 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.

摘要翻译： 本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料 第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。 在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％ 中心部分。

公开(公告)号：US08012379B2

公开(公告)日：2011-09-06

申请号：US12870275

申请日：2010-08-27

申请人： Hidenori Miyakawa ,  Shigeaki Sakatani ,  Kumiko Sugiyama ,  Takayuki Higuchi ,  Atsushi Yamaguchi

发明人： Hidenori Miyakawa ,  Shigeaki Sakatani ,  Kumiko Sugiyama ,  Takayuki Higuchi ,  Atsushi Yamaguchi

IPC分类号： H01B1/02 ,  B05D7/00

CPC分类号： H05K1/095 ,  C08G59/66 ,  C08G59/687 ,  C08K5/37 ,  C09J163/00 ,  H01B1/22 ,  H05K3/321 ,  H05K3/4069 ,  H05K2201/0224 ,  H05K2203/122

摘要： A conductive bonding material having an improved preservation stability, and hardens when desired, preferably immediately hardens at a low temperature is provided. In one invention, the conductive bonding material comprises a conductive particle ingredient, an epoxy resin ingredient, and a hardening agent ingredient for said epoxy resin and the hardening agent ingredient for said epoxy resin further comprise a reforming agent having a thiol group. In another invention, a conductive bonding material comprising an epoxy resin hardening ingredient, wherein said epoxy resin hardening ingredient contains a sulfur-containing compound having an end group which can coordinate with a surface of the metallic particles, and the sulfur-containing compound comes to perform as a hardening agent for the epoxy resin by dissociating from the surface of the metallic particles. The conductive bonding material may contain fragrance.

摘要翻译： 提供具有改善的保存稳定性并且当需要时硬化的导电粘合材料优选在低温下立即硬化。 在一个发明中，导电接合材料包括导电颗粒成分，环氧树脂成分和用于所述环氧树脂的硬化剂成分和用于所述环氧树脂的硬化剂成分，还包含具有硫醇基的重整剂。 在另一发明中，包含环氧树脂硬化成分的导电性接合材料，其中所述环氧树脂硬化成分含有具有可与金属粒子表面配位的端基的含硫化合物，含硫化合物进入 通过从金属颗粒的表面离解，作为环氧树脂的硬化剂。 导电接合材料可能含有香料。

公开(公告)号：US20090116205A1

公开(公告)日：2009-05-07

申请号：US12260219

申请日：2008-10-29

申请人： Atsushi Yamaguchi ,  Hidenori Miyakawa ,  Shigeaki Sakatani ,  Koso Matsuno

发明人： Atsushi Yamaguchi ,  Hidenori Miyakawa ,  Shigeaki Sakatani ,  Koso Matsuno

IPC分类号： H05K7/00

CPC分类号： H05K3/3484 ,  B23K35/264 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K3/284 ,  H05K3/321 ,  H05K3/3463 ,  H01L2924/3512 ,  H01L2924/00

摘要： A plurality of semiconductor elements is adjacently mounted on a substrate by a solder with a melting point of 200° C. or lower, an electronic part other than the semiconductor elements is mounted on the substrate between the adjacently mounted semiconductor elements by a solder with a melting point of 200° C. or lower, and spaces between the plurality of semiconductor elements and the substrate, spaces between the electronic part and the substrate, and spaces between the plurality of semiconductor elements and the electronic part are integrally molded with a molding resin.

摘要翻译： 多个半导体元件通过熔点为200℃以下的焊料相邻地安装在基板上，除了半导体元件之外的电子部件通过焊料与相邻安装的半导体元件之间的基板安装在基板上 熔点为200℃以下，多个半导体元件与基板之间的空间，电子部件与基板之间的空间以及多个半导体元件与电子部件之间的空间与成形树脂一体成型 。

公开(公告)号：US08345444B2

公开(公告)日：2013-01-01

申请号：US12675080

申请日：2008-10-21

申请人： Shigeaki Sakatani ,  Koso Matsuno ,  Atsushi Yamaguchi ,  Hidenori Miyakawa ,  Mikiya Ueda

发明人： Shigeaki Sakatani ,  Koso Matsuno ,  Atsushi Yamaguchi ,  Hidenori Miyakawa ,  Mikiya Ueda

IPC分类号： H05K1/11

CPC分类号： H05K3/305 ,  H01L21/563 ,  H01L23/295 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/12044 ,  H01L2924/15151 ,  H01L2924/18301 ,  H05K2201/09036 ,  H05K2201/09072 ,  H05K2201/10545 ,  H05K2201/10674 ,  H05K2201/10734 ,  H05K2201/10977 ,  Y02P70/613 ,  Y10T29/49139 ,  H01L2924/00

摘要： A structure with electronic component mounted therein includes a wiring board on which an electronic component is mounted at least on its first face, resin provided at least between the electronic component and the wiring board, and a plurality of holes formed in the wiring board at region corresponding to a mounting position of the electronic component. The holes are filled with the resin. This suppresses warpage of the structure with electronic component mounted therein, and also improves reliability by reducing a stress applied to a bonding section between the wiring board and the electronic component.

摘要翻译： 安装有电子部件的结构包括：至少在其第一面上安装有电子部件的布线板，至少设置在电子部件和布线基板之间的树脂，以及在布线基板上形成的多个孔 对应于电子部件的安装位置。 孔用树脂填充。 这抑制了安装有电子部件的结构的翘曲，并且还通过减小施加到布线板和电子部件之间的接合部的应力来提高可靠性。

公开(公告)号：US08179686B2

公开(公告)日：2012-05-15

申请号：US12259661

申请日：2008-10-28

申请人： Shigeaki Sakatani ,  Atsushi Yamaguchi ,  Koso Matsuno ,  Hidenori Miyakawa

发明人： Shigeaki Sakatani ,  Atsushi Yamaguchi ,  Koso Matsuno ,  Hidenori Miyakawa

IPC分类号： H05K7/00

CPC分类号： H05K3/305 ,  H01L21/563 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/01079 ,  H01L2924/15151 ,  H05K2201/09063 ,  H05K2201/09781 ,  H05K2201/10674 ,  H05K2201/10689 ,  H05K2201/10719 ,  H05K2201/10977 ,  Y02P70/613 ,  Y10T29/4913 ,  H01L2924/00

摘要： Including a wiring board having an electronic component mounted at least on a first surface, a resin applied at least between the electronic component and the wiring board, and a through-hole provided in a region corresponding to the mounting position of the electronic component in the wiring board, a protrusion is formed on the wiring board so as to overlap at least with the electronic component, around a region corresponding to the mounting position of the electronic component.

摘要翻译： 包括具有至少安装在第一表面上的电子部件的布线板，至少施加在电子部件和布线板之间的树脂，以及设置在与电子部件的安装位置对应的区域中的通孔 在布线基板上，至少与电子部件重叠，在与电子部件的安装位置对应的区域上形成突起。

公开(公告)号：US20110108996A1

公开(公告)日：2011-05-12

申请号：US13003024

申请日：2010-06-17

申请人： Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Taichi Nakamura ,  Takahiro Matsuo

发明人： Akio Furusawa ,  Shigeaki Sakatani ,  Hidetoshi Kitaura ,  Taichi Nakamura ,  Takahiro Matsuo

IPC分类号： H01L29/40 ,  C22C12/00 ,  B05D5/12

CPC分类号： C22C12/00 ,  B23K1/0016 ,  B23K1/20 ,  B23K35/264 ,  B23K35/362 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01049 ,  H01L2924/01016 ,  H01L2924/01083 ,  H01L2924/01034 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.

摘要翻译： 本发明提供一种具有接合结构的半导体部件，该接合结构包括半导体器件，与半导体器件相对设置的电极，以及包含Bi作为主要部件并将半导体器件连接到电极的接合材料。 由于接合材料含有碳化合物，与常规材料相比，可以减少由于半导体器件和电极之间的线性膨胀系数的差异引起的接合故障。 含有Bi作为主要成分的接合材料能够提供通过比常规接头更可靠的接头将半导体器件和电极接合的接合结构。