公开(公告)号：US09935243B2

公开(公告)日：2018-04-03

申请号：US15266990

申请日：2016-09-15

Applicant: The Regents of the University of California

Inventor： Asad J. Mughal ,  Sang Ho Oh ,  Steven P. DenBaars

IPC: H01L33/40 ,  H01L33/42 ,  H01L33/32 ,  H01L31/0224

CPC classification number: H01L33/42 ,  H01L31/022483 ,  H01L33/32 ,  H01L2933/0016

Abstract: A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.

公开(公告)号：US09927076B2

公开(公告)日：2018-03-27

申请号：US15412289

申请日：2017-01-23

Applicant: The Regents of the University of California

Inventor： Kristin A. Denault ,  Steven P. DenBaars ,  Ram Seshadri Seshadri

IPC: F21K9/64 ,  F21V29/70 ,  F21V8/00 ,  F21K9/61 ,  F21V7/00 ,  F21V21/10 ,  F21V9/16 ,  F21V3/00 ,  F21W131/105 ,  F21Y115/30

CPC classification number: F21K9/64 ,  F21K9/61 ,  F21S8/08 ,  F21V3/00 ,  F21V7/00 ,  F21V9/30 ,  F21V21/10 ,  F21V29/70 ,  F21W2131/105 ,  F21Y2101/00 ,  F21Y2115/30 ,  G02B6/00 ,  G02B6/0005

Abstract: A high-power, high-brightness lighting system for large venue lighting, which includes a laser diode as the excitation source and one or more phosphor materials placed at a remote distance from the laser source. The invention offers a lighting system with the advantages of high brightness, high efficiency, high luminous efficacy, long lifetimes, quick turn-on times, suitable color properties, environmental sustainability, and easy maintenance, which may allow for smart and flexible control over large area lighting systems with resulting savings in operating and maintenance costs.

公开(公告)号：US09611987B2

公开(公告)日：2017-04-04

申请号：US14066012

申请日：2013-10-29

Applicant: The Regents of the University of California

Inventor： Kathryn M. Kelchner ,  James S. Speck ,  Nathan A. Pfaff ,  Steven P. DenBaars

IPC: H01L29/20 ,  H01L21/205 ,  F21K99/00 ,  F21K9/90 ,  F21K9/64

CPC classification number: F21K9/64 ,  F21K9/90

Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.

公开(公告)号：US20160079499A1

公开(公告)日：2016-03-17

申请号：US14947244

申请日：2015-11-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/60 ,  H01L33/32 ,  H01L33/50

CPC classification number: H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

公开(公告)号：US09076927B2

公开(公告)日：2015-07-07

申请号：US14073698

申请日：2013-11-06

Applicant: The Regents of the University of California

Inventor： Stacia Keller ,  Carl J. Neufeld ,  Umesh K. Mishra ,  Steven P. DenBaars

IPC: H01L33/32 ,  H01L21/02 ,  H01L33/00 ,  H01L31/0735 ,  H01L31/18 ,  H01L33/12

CPC classification number: H01L33/32 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L31/0735 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/12 ,  Y02E10/544

Abstract: A method of fabricating a heterostructure device, including (a) obtaining a first layer or substrate; (b) growing a second layer on the first layer or substrate; and (c) forming the second layer that is at least partially relaxed wherein (1) the first layer and the second layer have the same lattice structure but different lattice constants, (2) the first layer and the second layer form a heterojunction, and (3) the heterojunction forms an active area of a device or serves as a pseudo-substrate for the device.

Abstract translation: 一种制造异质结构器件的方法，包括（a）获得第一层或衬底; （b）在第一层或衬底上生长第二层; （c）形成至少部分松弛的第二层，其中（1）第一层和第二层具有相同的晶格结构但具有不同的晶格常数，（2）第一层和第二层形成异质结，以及 （3）异质结形成器件的有源区，或用作器件的伪衬底。

公开(公告)号：US20150115220A1

公开(公告)日：2015-04-30

申请号：US14511966

申请日：2014-10-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/04

Abstract: A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN, where 0

Abstract translation: 一种氮化物发光二极管，包括形成在图案化衬底上或上面的至少一个氮化物基有源区，其中所述有源区由至少一个量子阱结构构成; 以及在有源区上或上方形成的具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US20150092386A1

公开(公告)日：2015-04-02

申请号：US14567889

申请日：2014-12-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie N. Fellows-DeMille ,  Hisashi Masui ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: F21K99/00 ,  F21V9/10 ,  F21V9/08 ,  H01L33/00 ,  H01S5/343 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  H01S5/00 ,  F21V9/14 ,  H01L33/32

CPC classification number: F21K9/65 ,  F21V9/08 ,  F21V9/14 ,  F21V9/40 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L25/0753 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01L33/50 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01S5/005 ,  H01S5/34333 ,  H01L2924/00

Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

Abstract translation: 一种用于发射偏振白光的照明装置，其至少包括用于发射由一个或多个第一波长组成并具有第一偏振方向的初级光的第一光源; 以及至少第二光源，用于发射第一偏振方向的二次光，其包括一个或多个次级波长，其中第一光和次级光被组合以产生偏振的白光。 照明装置还可以包括用于控制初级光的强度的偏振器，其中偏振器的旋转改变其偏振轴相对于第一偏振方向的对准，其改变通过偏振器的初级光的透射，其控制 颜色坐标或白光的色相。

公开(公告)号：US20150048381A1

公开(公告)日：2015-02-19

申请号：US14493099

申请日：2014-09-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/20 ,  H01S5/343 ,  H01L21/3063 ,  H01S5/183 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract translation: 氮化镓（GaN）外延衬底的再利用方法使用带隙选择性光电化学（PEC）蚀刻从体积或独立的GaN衬底去除一个或多个外延层而不损坏衬底，允许衬底被再次使用 用于进一步生长附加的外延层。 该方法通过允许重新使用昂贵的体积或独立的GaN衬底而有助于器件生产的显着降低成本。

公开(公告)号：US20140318592A1

公开(公告)日：2014-10-30

申请号：US14367087

申请日：2012-12-14

Applicant: The Regents of the University of California

Inventor： Alexander Sztein ,  John E. Bowers ,  Steven P. DenBaars

IPC: H01L35/22 ,  C30B25/02 ,  H01L35/34 ,  C30B23/06

CPC classification number: H01L35/22 ,  C30B23/066 ,  C30B25/02 ,  H01L35/26 ,  H01L35/34

Abstract: A method for enhancement of thermoelectric properties through polarization engineering. Internal electric fields created within a material are used to spatially confine electrons for the purpose of enhancing thermoelectric properties. Electric fields can be induced within a material by the presence of bound charges at interfaces. A combination of spontaneous and piezoelectric polarization can induce this interfacial charge. The fields created by these bound charges have the effect of confining charge carriers near these interfaces. By confining charge carriers to a channel where scattering centers can be deliberately excluded the electron mobility can be enhanced, thus enhancing thermoelectric power factor. Simultaneously, phonons will not be affected by the fields and thus will be subject to the many scattering centers present in the majority of the structure. This allows for simultaneous enhancement of power factor and reduction of thermal conductivity, thus improving the thermoelectric figure of merit, ZT. This approach is also compatible with other strategies for reducing thermal conductivity, for example the inclusion of nanostructures.

Abstract translation: 通过极化工程增强热电性能的方法。 在材料内产生的内部电场用于空间上限制电子，以增强热电性能。 通过在界面处存在结合的电荷，可以在材料内诱导电场。 自发和压电极化的组合可以引起这种界面电荷。 由这些绑定的电荷产生的磁场具有限制这些接口附近的电荷载体的作用。 通过将电荷载流子限制在可以有意排除散射中心的通道，可以增强电子迁移率，从而提高热电功率因数。 同时，声子不会受到这些领域的影响，因此将受到大多数结构中存在的许多散射中心的制约。 这允许同时增强功率因数和降低热导率，从而提高热电特性值ZT。 这种方法也适用于降低导热性的其他策略，例如纳入纳米结构。

公开(公告)号：US20140291694A1

公开(公告)日：2014-10-02

申请号：US14305734

申请日：2014-06-16

Applicant: The regents of The University of California

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: C30B23/02 ,  H01L31/0304 ,  H01L33/16 ,  C30B25/18 ,  H01L33/00 ,  H01L31/18 ,  H01L21/02 ,  C30B23/06 ,  H01L31/036 ,  H01L33/32

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。