公开(公告)号：US09685354B2

公开(公告)日：2017-06-20

申请号：US14676478

申请日：2015-04-01

Applicant: XINTEC INC.

Inventor： Yen-Shih Ho ,  Tsang-Yu Liu ,  Chia-Sheng Lin ,  Yi-Ming Chang

IPC: B26D1/09 ,  H01L21/67 ,  H01L21/683 ,  B26D7/18

CPC classification number: H01L21/67092 ,  B26D1/095 ,  B26D7/1863 ,  H01L21/6838 ,  Y10T83/0267 ,  Y10T225/10 ,  Y10T225/12 ,  Y10T225/364

Abstract: An embodiment of this invention provides a separation apparatus for separating a stacked article, such as a semiconductor chip package with sensing functions, comprising a substrate and a cap layer formed on the substrate. The separation apparatus comprises a vacuum nozzle head including a suction pad having a top surface and a bottom surface, a through hole penetrating the top surface and the bottom surface of the suction pad, and a hollow vacuum pipe connecting the through hole to a vacuum pump; a stage positing under the vacuum nozzle head and substantially aligning with the suction pad; a control means coupling to the vacuum nozzle head to lift upward or lower down the vacuum nozzle head; and a first cutter comprising a first cutting body and a first knife connecting to the first cutting body. The cap layer is pressed against by the bottom surface of the suction pad and sucked by the suction pad of the vacuum nozzle head after the vacuum pump begins to vacuum the air within the hollow vacuum pipe and the through hole. Then, the first cutter cuts into the interface between the substrate and the cap layer, and the cap lay is separated from the substrate by the suction force of the vacuum nozzle head and the lift force generated by the upward movement of the vacuum nozzle head.

公开(公告)号：US09601460B2

公开(公告)日：2017-03-21

申请号：US14618413

申请日：2015-02-10

Applicant: XINTEC INC.

Inventor： Yen-Shih Ho ,  Tsang-Yu Liu ,  Chia-Sheng Lin ,  Chia-Ming Cheng ,  Shu-Ming Chang ,  Tzu-Wen Tseng

IPC: H01L23/06 ,  H01L23/00 ,  H01L23/31 ,  H01L29/06 ,  H01L23/525

CPC classification number: H01L24/94 ,  H01L23/3114 ,  H01L23/3178 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L29/0657 ,  H01L2224/0224 ,  H01L2224/02245 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/06165 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/94 ,  H01L2924/3512 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0665

Abstract: A chip package including a semiconductor substrate is provided. A recess is in the semiconductor substrate and adjoins a side edge of the semiconductor substrate, wherein the semiconductor substrate has at least one spacer protruding from the bottom of the recess. A conducting layer is disposed on the semiconductor substrate and extends into the recess.

公开(公告)号：US09318461B2

公开(公告)日：2016-04-19

申请号：US14255872

申请日：2014-04-17

Applicant: XINTEC INC.

Inventor： Chun-Wei Chang ,  Kuei-Wei Chen ,  Chia-Ming Cheng ,  Chia-Sheng Lin ,  Chien-Hui Chen ,  Tsang-Yu Liu

IPC: H01L21/00 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L21/784 ,  H01L21/683

CPC classification number: H01L24/26 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/784 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/94 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05566 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2224/03

Abstract: A wafer level array of chips is provided. The wafer level array of chips comprises a semiconductor wafer, and a least one extending-line protection. The semiconductor wafer has at least two chips, which are arranged adjacent to each other, and a carrier layer. Each chip has an upper surface and a lower surface, and comprises at least one device. The device is disposed upon the upper surface, covered by the carrier layer. The extending-line protection is disposed under the carrier layer and between those two chips. The thickness of the extending-line protection is less than that of the chip. Wherein the extending-line protection has at least one extending-line therein. In addition, a chip package fabricated by the wafer level array of chips, and a method thereof are also provided.

Abstract translation: 提供晶片级的芯片阵列。 晶片级的芯片阵列包括半导体晶片和至少一个延伸线保护。 半导体晶片具有彼此相邻布置的至少两个芯片和载体层。 每个芯片具有上表面和下表面，并且包括至少一个装置。 该装置设置在上表面上，被载体层覆盖。 延伸线保护设置在载体层之下和两个芯片之间。 延长线保护的厚度小于芯片的厚度。 其中延伸线保护件中至少有一条延伸线。 此外，还提供了由晶片级阵列芯片制造的芯片封装及其方法。

公开(公告)号：US09305842B2

公开(公告)日：2016-04-05

申请号：US14592818

申请日：2015-01-08

Applicant: XINTEC INC.

Inventor： Chia-Sheng Lin ,  Po-Han Lee

IPC: H01L21/768 ,  H01L21/48 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L27/146

CPC classification number: H01L21/76898 ,  H01L21/481 ,  H01L21/76897 ,  H01L23/3178 ,  H01L23/3192 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/20 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/00

Abstract: A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate, having a first surface and an opposing second surface. A spacer is disposed under the second surface of the semiconductor substrate and a cover plate is disposed under the spacer. A recessed portion is formed adjacent to a sidewall of the semiconductor substrate, extending from the first surface of the semiconductor substrate to at least the spacer. Then, a protection layer is disposed over the first surface of the semiconductor substrate and in the recessed portion.

Abstract translation: 提供了芯片封装及其制造方法。 芯片封装包括具有第一表面和相对的第二表面的半导体衬底。 间隔件设置在半导体衬底的第二表面下方，并且覆盖板设置在间隔件下方。 形成与半导体衬底的侧壁相邻的凹部，从半导体衬底的第一表面延伸到至少间隔件。 然后，保护层设置在半导体衬底的第一表面和凹部中。

公开(公告)号：US11942563B1

公开(公告)日：2024-03-26

申请号：US18327875

申请日：2023-06-01

Applicant: XINTEC INC.

Inventor： Chia-Sheng Lin ,  Hui-Hsien Wu ,  Jian-Hong Chen ,  Tsang-Yu Liu ,  Kuei-Wei Chen

IPC: H01L31/0352 ,  H01L31/02

CPC classification number: H01L31/03529 ,  H01L31/02005

Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

公开(公告)号：US11450697B2

公开(公告)日：2022-09-20

申请号：US16581594

申请日：2019-09-24

Applicant: XINTEC INC.

Inventor： Kuei-Wei Chen ,  Chia-Ming Cheng ,  Chia-Sheng Lin

IPC: H01L27/146

Abstract: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.

公开(公告)号：US20210343591A1

公开(公告)日：2021-11-04

申请号：US17373773

申请日：2021-07-13

Applicant: XINTEC INC.

Inventor： Chia-Sheng Lin ,  Hui-Hsien Wu ,  Jian-Hong Chen ,  Tsang-Yu Liu ,  Kuei-Wei Chen

IPC: H01L21/768 ,  H01L23/00 ,  H01L21/02

Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

公开(公告)号：US11121031B2

公开(公告)日：2021-09-14

申请号：US16668570

申请日：2019-10-30

Applicant: XINTEC INC.

Inventor： Chia-Sheng Lin ,  Hui-Hsien Wu ,  Jian-Hong Chen ,  Tsang-Yu Liu ,  Kuei-Wei Chen

IPC: H01L21/768 ,  H01L23/00 ,  H01L21/02

Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

公开(公告)号：US09761555B2

公开(公告)日：2017-09-12

申请号：US14604525

申请日：2015-01-23

Applicant: XINTEC INC.

Inventor： Jiun-Yen Lai ,  Yu-Wen Hu ,  Bai-Yao Lou ,  Chia-Sheng Lin ,  Yen-Shih Ho ,  Hsin Kuan

IPC: H01L31/00 ,  H01L23/00 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L24/81 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03902 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05007 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13644 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A manufacturing method of a passive component structure includes the following steps. A protection layer is formed on a substrate, and bond pads of the substrate are respectively exposed through protection layer openings. A conductive layer is formed on the bond pads and the protection layer. A patterned photoresist layer is formed on the conductive layer, and the conductive layer adjacent to the protection layer openings is exposed through photoresist layer openings. Copper bumps are respectively electroplated on the conductive layer. The photoresist layer and the conductive layer not covered by the copper bumps are removed. A passivation layer is formed on the copper bumps and the protection layer, and at least one of the copper bumps is exposed through a passivation layer opening. A diffusion barrier layer and an oxidation barrier layer are chemically plated in sequence on the copper bump.

公开(公告)号：US08975755B2

公开(公告)日：2015-03-10

申请号：US14171734

申请日：2014-02-03

Applicant: Xintec Inc.

Inventor： Yen-Shih Ho ,  Tsang-Yu Liu ,  Chia-Sheng Lin

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/481 ,  H01L23/525 ,  H01L24/05 ,  H01L24/16 ,  H01L29/0657 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/48091 ,  H01L2224/48151 ,  H01L2224/73207 ,  H01L2924/10156 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

Abstract: An embodiment of the disclosure provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed on the first surface and extending into the first recess and/or the second recess; an insulating layer located between the wire layer and the semiconductor substrate; a chip disposed on the first surface; and a conducting structure disposed between the chip and the first surface.

Abstract translation: 本公开的一个实施例提供一种芯片封装，其包括：具有第一表面和第二表面的半导体衬底; 从所述第一表面延伸到所述第二表面的第一凹部; 从所述第一凹部的底部朝向所述第二表面延伸的第二凹部，其中所述第一凹部的侧壁和所述底部以及所述第二凹部的第二侧壁和第二底部一起形成所述半导体衬底的外侧表面; 电线层，其设置在所述第一表面上并延伸到所述第一凹部和/或所述第二凹部中; 位于所述导线层和所述半导体基板之间的绝缘层; 设置在所述第一表面上的芯片; 以及设置在所述芯片和所述第一表面之间的导电结构。