CHIP PACKAGE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190273175A1

    公开(公告)日:2019-09-05

    申请号:US16291637

    申请日:2019-03-04

    Applicant: XINTEC INC.

    Abstract: A chip package includes a chip, a sidewall structure that has a first light-shielding layer, a second light-shielding layer, and a cover. The chip has a light emitter and a light receiver that are located on a top surface of the chip. The sidewall structure is located on the top surface of the chip and has two aperture areas. The light emitter and the light receiver are respectively located in the two aperture areas. The sidewall structure surrounds the light emitter and the light receiver, and at least one surface of the sidewall structure has the first light-shielding layer. The second light-shielding layer is located between the chip and the sidewall structure. The cover is located on a surface of the sidewall structure facing away from the chip, and at least covers the light receiver and the sidewall structure that surrounds the light receiver.

    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    16.
    发明申请
    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
    半导体结构及其制造方法

    公开(公告)号:US20150179831A1

    公开(公告)日:2015-06-25

    申请号:US14640307

    申请日:2015-03-06

    Applicant: XINTEC INC.

    Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

    Abstract translation: 半导体结构包括硅衬底,保护层,电焊盘,隔离层,再分配层,导电层,钝化层和导电结构。 硅基板具有凹形区域,台阶结构,齿结构,第一表面和与第一表面相对的第二表面。 台阶结构和齿结构围绕凹区域。 台阶结构具有第一倾斜表面,第三表面和面对凹入区域并且依次连接的第二倾斜表面。 保护层位于硅衬底的第一表面上。 电焊盘位于保护层中,并通过凹面露出。 隔离层位于第一和第二倾斜表面,台阶结构的第二和第三表面以及齿结构上。

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