Abstract:
There is disclosed an electric device comprising: an actuator unit which includes a plurality of electrodes formed thereon; a printed wiring board which comprises: an electrically insulating flexible layer which has on one of its opposite sides protrusions for the respective electrodes, each of the protrusions forming a corresponding recess on the other side of the flexible layer; and a plurality of electrically conducting layers disposed on the respective protrusions to be in contact with the respectively corresponding electrodes; and a plurality of bonding parts each of which is in contact with one of the conducting layers and a corresponding one of the electrodes to completely cover a contact portion between the conducting layer and the electrode so as to maintain the contact therebetween.
Abstract:
An interposer, between a die and a substrate, has a body with a first surface, an opposite second surface, and a channel that passes from the first surface, through the body to the opposite second surface.
Abstract:
Methods for fabricating carrier substrates and other semiconductor device components include disposing a collar around at least a portion of a contact. The collar may be formed by a programmed material consolidation process. The programmed material consolidation process may be effected in conjunction with a feature recognition technique, such as machine vision. Once one or more collars are in place, the semiconductor device component may be electrically connected to another semiconductor device component.
Abstract:
A sealed electronic module is manufactured by forming a housing that is open at one end, dispensing a first quantity of potting material into the housing via the open end, inserting a circuit board and electrical connector assembly into the housing so that the inboard end of the circuit board is immersed in the potting material, and dispensing a second quantity of potting material into an area bridging the connector assembly and the housing. When cured, the first quantity of potting material attaches the inboard end of the circuit board to the housing, and the second quantity of potting material attaches the connector to the housing and environmentally seals the module.
Abstract:
An article includes a mounting substrate, a passive component site on the mounting substrate, and an active component site on the mounting substrate. The article also includes a fluid flow barrier disposed local to the passive component site and spaced apart from the active component site. The fluid flow barrier can be a recess that resists fluid flow thereinto because of surface tension of the fluid when it meets the recess edge. The fluid flow barrier can include a boundary that diverts fluid flow due to the angle of the recess edge as the fluid approaches it. An embodiment also includes a packaging system that includes the article and at least one passive component. An embodiment also includes a method of assembling the article or the packaging system.
Abstract:
An infrared emissive first insulating portion, which radiates heat transferred from a WCSP corresponding to an electronic part to a first conductive portion as infrared radiation with high efficiency, is formed on the first conductive portion lying in a through hole provided in a printed wiring board with the WCSP mounted thereon.
Abstract:
Improve the productivity and cost for the manufacturing of a semiconductor device referred to as a wafer level CSP. The manufacturing method for a semiconductor device related to this invention contains each of the processes that form a wiring (18) for the purpose of electrically connecting each electrode pad (10a) and external connecting terminals on top of a wafer (10) on which semiconductor elements are formed, connect conductive balls that are preformed by a separate process on top of this, and next, cover the above-mentioned wafer with a resin (32) such that the upper portion of the conductive supporting posts (30) are exposed. In a later process, solder balls (34) are arranged as external connecting terminals on the upper portion of the conductive supporting posts, and in the final process, semiconductor elements are formed by dicing the above-mentioned wafer along the boundary lines of the above-mentioned semiconductor elements.
Abstract:
The described embodiments relate to methods and systems for forming and protecting electrical interconnect assemblies. In one embodiment, an electrical interconnect assembly forming method forms an electrical interconnect between one or more conductors of a first support structure and one or more conductors of a second support structure. The method also distributes a generally flowable material over the electrical interconnect and exposes the generally flowable material to conditions sufficient to render the generally flowable material into a generally non-flowable state that provides fluid protection to the electrical interconnect and supports the electrical interconnect to reduce stress concentration at the electrical interconnect.
Abstract:
A method of forming a solder ball includes the steps of forming an electrode pad on a substrate, forming an insulating layer having a first opening at a position of the electrode pad, filling the first opening with solder paste that include solder and first resin, and applying a heating process to the solder paste so as to form a solder ball on the electrode pad and to form a cured resin member of the first resin across a border between the electrode pad and the substrate.
Abstract:
A package structure with an area bump has at least a chip (also known as a die), a substrate, a plurality of first bumps (normal bumps) and at least a second bump (area bump), wherein the first bumps are electrically and mechanically connected to one of first bonding pads and the corresponding one of first contact pads. The second bump is electrically and mechanically connected to a second bonding pad and the corresponding second contact pad of the substrate, wherein the size of the second bump is larger than one of the first bumps. Because the size of the second bump is larger than one of the first bumps, the structure has much better electrical performance and performance of heat dissipation.