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115 条记录 (耗时 0.023 秒)

    Cooling Structures and Methods
    22.
    发明申请
    Cooling Structures and Methods 有权
    冷却结构与方法

    公开(公告)号：US20100127390A1

    公开(公告)日：2010-05-27

    申请号：US12275731

    申请日：2008-11-21

    申请人： Hans-Joachim Barth

    发明人： Hans-Joachim Barth

    IPC分类号： H01L23/473 ,  F28F7/00 ,  B23P17/00 ,  H01L23/467

    CPC分类号： H01L23/473 ,  H01L2924/0002 ,  Y10T29/49002 ,  H01L2924/00

    摘要： Cooling structures and methods, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a cooling structure for a semiconductor device includes at least one channel defined between a first workpiece and a second workpiece. The second workpiece is bonded to the first workpiece. The at least one channel is adapted to retain a fluid.

    摘要翻译： 公开了冷却结构和方法，制造半导体器件的方法和半导体器件。 在一个实施例中，用于半导体器件的冷却结构包括限定在第一工件和第二工件之间的至少一个通道。 第二工件结合到第一工件。 至少一个通道适于保持流体。

    MIM Capacitors
    23.
    发明申请
    MIM Capacitors 有权
    MIM电容器

    公开(公告)号：US20080290459A1

    公开(公告)日：2008-11-27

    申请号：US12182901

    申请日：2008-07-30

    申请人： Hans-Joachim Barth ,  Petra Felsner ,  Erdem Kaltalioglu ,  Gerald R. Friese

    发明人： Hans-Joachim Barth ,  Petra Felsner ,  Erdem Kaltalioglu ,  Gerald R. Friese

    IPC分类号： H01L29/92

    CPC分类号： H01L28/40 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/3185 ,  H01L27/0805 ,  H01L28/55 ,  H01L28/75

    摘要： A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bottom plate. The insulating layer is patterned with a MIM capacitor top plate pattern, and a MIM dielectric material is deposited over the patterned insulating layer. A conductive material is deposited over the MIM dielectric material, and the wafer is planarized to remove the conductive material and MIM dielectric material from the top surface of the insulating layer and form a MIM capacitor top plate. A second cap layer is selectively formed over the MIM capacitor top plate.

    摘要翻译： 一种用于形成MIM电容器的方法和由其形成的MIM电容器器件。 优选实施例包括在包括MIM电容器底板的晶片上选择性地形成第一盖层，以及在MIM电容器底板上沉积绝缘层。 用MIM电容器顶板图案对绝缘层进行构图，并且在图案化绝缘层上沉积MIM电介质材料。 在MIM介电材料上沉积导电材料，并且平坦化晶片以从绝缘层的顶表面去除导电材料和MIM电介质材料，并形成MIM电容器顶板。 在MIM电容器顶板上选择性地形成第二盖层。

    Method for fabricating an interconnect arrangement with increased capacitive coupling and associated interconnect arrangement
    24.
    发明申请
    Method for fabricating an interconnect arrangement with increased capacitive coupling and associated interconnect arrangement 有权
    用于制造具有增加的电容耦合和相关联的互连布置的互连装置的方法

    公开(公告)号：US20070042542A1

    公开(公告)日：2007-02-22

    申请号：US11205767

    申请日：2005-08-16

    申请人： Hans-Joachim Barth ,  Jurgen Holz

    发明人： Hans-Joachim Barth ,  Jurgen Holz

    IPC分类号： H01L21/8242

    CPC分类号： H01L23/5223 ,  H01L21/2885 ,  H01L21/76877 ,  H01L27/0805 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/162 ,  H05K3/107 ,  H01L2924/00

    摘要： A method for fabricating an interconnect arrangement with increased capacitive coupling is described. A trench structure is formed in a first dielectric having a capacitor region with a first aspect ratio and an interconnect region with a second aspect ratio connected thereto. The trench structure of the interconnect region is completely filled by a first interconnect. The trench structure of the capacitor region is only partially filled by a first capacitor electrode and is completely filled by a capacitor dielectric and a second capacitor electrode. In a second dielectric formed thereon, a second interconnect with a contact via is formed, which is connected to the second capacitor electrode.

    摘要翻译： 描述了一种用于制造具有增加的电容耦合的互连装置的方法。 在具有第一纵横比的电容器区域和与其连接的第二纵横比的互连区域的第一电介质中形成沟槽结构。 互连区域的沟槽结构由第一互连完全填充。 电容器区域的沟槽结构仅由第一电容器电极部分地填充，并且由电容器电介质和第二电容器电极完全填充。 在其上形成的第二电介质中，形成具有接触通孔的第二互连件，其连接到第二电容器电极。

    Barrier layers for conductive features
    25.
    发明申请
    Barrier layers for conductive features 有权
    阻挡层用于导电特征

    公开(公告)号：US20060202345A1

    公开(公告)日：2006-09-14

    申请号：US11079738

    申请日：2005-03-14

    申请人： Hans-Joachim Barth ,  Juergen Holz

    发明人： Hans-Joachim Barth ,  Juergen Holz

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24479 ,  H01L2924/00

    摘要： Barrier layers for conductive features and methods of formation thereof are disclosed. A first barrier material is deposited on top surfaces of an insulating material, and a second barrier material is deposited on sidewalls of the insulating material, wherein the second barrier material is different than the first barrier material. The first barrier material induces grain growth of a subsequently deposited conductive material at a first rate, and the second barrier material induces grain growth of the conductive material at a second rate, wherein the second rate is slower than the first rate.

    摘要翻译： 公开了用于导电特征的阻挡层及其形成方法。 第一阻挡材料沉积在绝缘材料的顶表面上，并且第二阻挡材料沉积在绝缘材料的侧壁上，其中第二阻挡材料不同于第一阻挡材料。 第一阻挡材料以第一速率诱导随后沉积的导电材料的晶粒生长，并且第二阻挡材料以第二速率诱导导电材料的晶粒生长，其中第二速率比第一速率慢。

    Methods of forming MIM capacitors
    28.
    发明授权
    Methods of forming MIM capacitors 有权
    形成MIM电容器的方法

    公开(公告)号：US06949442B2

    公开(公告)日：2005-09-27

    申请号：US10429469

    申请日：2003-05-05

    申请人： Hans-Joachim Barth ,  Petra Felsner ,  Erdem Kaltalioglu ,  Gerald R. Friese

    发明人： Hans-Joachim Barth ,  Petra Felsner ,  Erdem Kaltalioglu ,  Gerald R. Friese

    IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/316 ,  H01L21/318 ,  H01L27/08 ,  H01L21/20

    CPC分类号： H01L28/40 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/3185 ,  H01L27/0805 ,  H01L28/55 ,  H01L28/75

    摘要： A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bottom plate. The insulating layer is patterned with a MIM capacitor top plate pattern, and a MIM dielectric material is deposited over the patterned insulating layer. A conductive material is deposited over the MIM dielectric material, and the wafer is planarized to remove the conductive material and MIM dielectric material from the top surface of the insulating layer and form a MIM capacitor top plate. A second cap layer is selectively formed over the MIM capacitor top plate.

    摘要翻译： 一种用于形成MIM电容器的方法和由其形成的MIM电容器器件。 优选实施例包括在包括MIM电容器底板的晶片上选择性地形成第一盖层，以及在MIM电容器底板上沉积绝缘层。 用MIM电容器顶板图案对绝缘层进行构图，并且在图案化绝缘层上沉积MIM电介质材料。 在MIM介电材料上沉积导电材料，并且平坦化晶片以从绝缘层的顶表面去除导电材料和MIM电介质材料，并形成MIM电容器顶板。 在MIM电容器顶板上选择性地形成第二盖层。

    Self-passivating Cu laser fuse
    29.
    发明授权
    Self-passivating Cu laser fuse 有权
    自钝化铜激光保险丝

    公开(公告)号：US06693343B2

    公开(公告)日：2004-02-17

    申请号：US09751554

    申请日：2000-12-28

    申请人： Hans-Joachim Barth

    发明人： Hans-Joachim Barth

    IPC分类号： H01L2900

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In an integrated circuit structure, the improvement comprising a self-passivating Cu-laser fuse characterized by resistance to oxidation and corrosion and improved adhesion in the interface between Cu and metallization lines and Cu and a dielectric cap subsequent to blowing the fuse by an energizing laser, the fuse comprising: a metallization-line; a liner separating the metallization line and a combination Cu-alloy seed layer and a pure Cu layer; a dielectric surrounding the liner; and a dielectric cap disposed over the surrounding dielectric, the liner and the combination Cu-alloy seed layer and pure Cu layer; the laser fuse being characterized after Laser energizing by passivation areas: a) on the open Cu-fuse surface; and b) in the interfaces between: (i) the Cu-alloy seed layer and the liners and dielectric; and (ii) between the pure Cu layer and the dielectric cap.

    摘要翻译： 在集成电路结构中，改进包括自钝化铜激光熔丝，其特征在于抗氧化和腐蚀，并且在Cu和金属化线之间的界面中改善粘合性，并且通过激励激光器熔化熔丝后的Cu和介电帽 所述熔丝包括：金属化线;分隔所述金属化线和铜合金种子层和纯Cu层的组合的衬垫;围绕所述衬垫的电介质; 以及设置在周围电介质上的电介质盖，衬套和组合Cu合金种子层和纯Cu层; 激光熔丝的特征在于激光通过钝化区域激励：a）在开放的Cu熔丝表面上; 和（b）在以下界面中：（i）Cu合金种子层和衬垫和电介质; 和（ii）在纯Cu层和电介质盖之间。