摘要:
A pillar grid array package (PGA) includes a substrate, a chip disposed on top of the substrate, and a plurality of stud bumps disposed on bottom of the substrate. The stud bumps are formed in an array and each has a flattened top to electrically connect to a printed circuit board, PCB, by an anisotropic conductive paste to achieve a thin package and to avoid substrate warpage problems of a ball grid array (BGA) during high-temperature reflow processes.
摘要:
A replaceable modular probe head is composed of a plurality of in-parallel probing modules. Each probing module has a plurality of in-series probing regions. In the present embodiment, each probing module has mechanical connection parts on its both ends to attach to a printed circuit board (PCB) to be a multi-DUT probe card. Therefore, the probing module can be replaced individually when probes are damaged or worn without replacing the whole probe head to reduce the fabrication cost of a multi-DUT probe head.
摘要:
A method of forming a plurality of elastic probes in a row is disclosed. Firstly, a substrate is provided, then, a shaping layer is formed on the substrate so as to offer two flat surfaces in parallel. A photoresist layer is formed on the substrate and on the shaping layer. Then, the photoresist layer is patterned to form a plurality of slots crossing an interface between the two flat surfaces where a plurality of elastic probes are formed in the slots. In one embodiment, the interface is an edge slope of the shaping layer so that each of the elastic probes has at least an elastic bending portion. During chip probing, the shifting direction of the elastic probes due to overdrives is perpendicular to the arranging direction of the bonding pads so that the elastic probes are suitable for probing chips with high-density and fine-pitch bonding pads.
摘要:
A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
摘要:
A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
摘要:
A semiconductor wafer structure comprises a first surface and a second surface opposite to the first surface, a plurality of chip areas formed on the first surface, a plurality of through-silicon holes formed in each of the plurality of chip areas connecting the first surface and the second surface, and a through-silicon-via (TSV) electrode structure formed in each through-silicon hole. Each through-silicon-via electrode structure comprises a dielectric layer formed on the inner wall of the through-silicon hole, a barrier layer formed on the inner wall of the dielectric layer and defining a vacancy therein, a filling metal layer filled into the vacancy, a first end of the filling metal layer being lower than the first surface forming a recess, and a soft metal cap connecting to and overlaying the first end of the filling metal layer, wherein a portion of the soft metal cap is formed in the recess and the soft metal cap protrudes out of the first surface. Hence, the reliability of multi-chip stack package structure can be enhanced with the application of these soft metal caps.
摘要:
Semiconductor package structures and methods for manufacturing the same are provided. The semiconductor package structure comprises a substrate unit and a first chip stack structure. The substrate unit comprises a circuit structure having test pads. The first chip stack structure comprises chips, and each of the chips has a plurality of through silicon plugs. The through silicon plugs of two adjacent chips are electrically connected and further electrically connected to the test pads of the substrate unit for electrical testing. Another semiconductor package structure provided by the present invention comprises a first semiconductor chip and a second semiconductor chip. Each of the semiconductor chips has test pads for electrical testing and a plurality of through silicon plugs connecting to the test pads. The second semiconductor chip is mounted on the first semiconductor chip, and a portion of the through silicon plugs of two semiconductor chips are electrically connected with each other.
摘要:
A conductive structure of a chip is provided. The conductive structure comprises a ground layer, a dielectric layer, a redistribution layer, an under bump metal and a solder bump. The ground layer electrically connects to the ground pad of the chip, while the dielectric layer overlays the ground layer. Thus, the conductive layer can result in impedance matching, and the packaged chip is adapted to transmit a high frequency signal.
摘要:
A method of forming a plurality of elastic probes in a row is disclosed. Firstly, a substrate is provided, then, a shaping layer is formed on the substrate so as to offer two flat surfaces in parallel. A photoresist layer is formed on the substrate and on the shaping layer. Then, the photoresist layer is patterned to form a plurality of slots crossing an interface between the two flat surfaces where a plurality of elastic probes are formed in the slots. In one embodiment, the interface is an edge slope of the shaping layer so that each of the elastic probes has at least an elastic bending portion. During chip probing, the shifting direction of the elastic probes due to overdrives is perpendicular to the arranging direction of the bonding pads so that the elastic probes are suitable for probing chips with high-density and fine-pitch bonding pads.
摘要:
A vertical probe head primarily comprise a substrate, a trace layer, and a plurality of vertical probes where the substrate has a first surface, a second surface, and a plurality of device holes penetrating through the first surface and the second surface. The trace layer is formed on the first surface. Each vertical probe has a bonding end and a probing end where the bonding ends are inserted into the device holes of the substrate and are electrically connected to the trace layer and the probing ends are protruded away from the second surface of the substrate. Resins are filled into the device holes to firmly fix the vertical probes so that the vertical probes will not easily be bent nor damaged.