公开(公告)号：US09934966B2

公开(公告)日：2018-04-03

申请号：US15189060

申请日：2016-06-22

申请人： Infineon Technologies AG

发明人： Guenther Ruhl ,  Klemens Pruegl

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16 ,  H01L21/04 ,  H01L21/225 ,  H01L29/04 ,  H01L29/06 ,  H01L29/167

CPC分类号： H01L21/02524 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0405 ,  H01L21/2254 ,  H01L21/7685 ,  H01L29/04 ,  H01L29/0669 ,  H01L29/1075 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66037 ,  H01L29/778

摘要： In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

公开(公告)号：US20170345740A1

公开(公告)日：2017-11-30

申请号：US15609136

申请日：2017-05-31

申请人： Infineon Technologies AG

发明人： Thomas Spoettl ,  Frank Pueschner ,  Guenther Ruhl ,  Peter Stampka

IPC分类号： H01L23/498 ,  H01L25/065 ,  H01L23/00 ,  H01L23/495 ,  H01L23/367 ,  H01L23/34 ,  G06K19/077 ,  H05K1/11 ,  G06K19/07

CPC分类号： H01L23/498 ,  G06K19/072 ,  G06K19/07309 ,  G06K19/077 ,  H01L23/34 ,  H01L23/3675 ,  H01L23/49537 ,  H01L23/573 ,  H01L24/73 ,  H01L25/0657 ,  H05K1/113

摘要： A semiconductor package includes a chip, a layer which is thermally coupled to the chip and which is formed from a material having a triggering temperature of greater than or equal to 200° C., starting from which an exothermic reaction takes place, and encapsulating material which at least partly covers the chip and the layer. The layer is configured in such a way and is arranged relative to the chip in such a way that, in the case of a triggered exothermic reaction of the material of the layer, at least one component of the chip is damaged on account of the temperature increase caused by the exothermic reaction.

公开(公告)号：US09714988B2

公开(公告)日：2017-07-25

申请号：US14514415

申请日：2014-10-15

申请人： Infineon Technologies AG

发明人： Markus Eckinger ,  Stefan Kolb ,  Alfons Dehe ,  Guenther Ruhl

IPC分类号： G01R33/06 ,  G01R33/07 ,  H01L27/092 ,  G01R33/00 ,  H01L43/14 ,  H01L43/06

CPC分类号： G01R33/072 ,  G01R33/0052 ,  H01L27/092 ,  H01L43/065 ,  H01L43/14

摘要： A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

公开(公告)号：US09536953B2

公开(公告)日：2017-01-03

申请号：US14745428

申请日：2015-06-20

申请人： Infineon Technologies AG

发明人： Klaus Elian ,  Guenther Ruhl ,  Horst Theuss ,  Irmgard Escher-Poeppel

IPC分类号： H01L29/06 ,  H01L29/16 ,  G01N27/12 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L23/28 ,  H01L23/495 ,  H01L23/00 ,  G01N33/00

CPC分类号： H01L29/1606 ,  G01N27/127 ,  G01N33/0059 ,  H01L21/561 ,  H01L21/568 ,  H01L23/28 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/11 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

摘要翻译： 在基板上产生石​​墨烯层。 在石墨烯层上沉积塑料材料以至少部分地覆盖石墨烯层。 将基板分成至少两个基片。

公开(公告)号：US09449873B2

公开(公告)日：2016-09-20

申请号：US13921284

申请日：2013-06-19

申请人： Infineon Technologies AG

发明人： Guenther Ruhl ,  Klemens Pruegl

IPC分类号： H01L21/768 ,  H01L23/498 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L21/02524 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0405 ,  H01L21/2254 ,  H01L21/7685 ,  H01L29/04 ,  H01L29/0669 ,  H01L29/1075 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66037 ,  H01L29/778

摘要： In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

摘要翻译： 在各种实施例中，提供了一种处理载体的方法。 用于处理载体的方法可以包括：在载体上形成第一催化金属层; 在所述第一催化金属层上形成源层; 在所述源层上形成第二催化金属层，其中所述第二催化金属层的厚度大于所述第一催化金属层的厚度; 并且随后进行退火以使源层的材料与源层的扩散材料形成与载体表面相邻的界面层的扩散。

公开(公告)号：US09347911B2

公开(公告)日：2016-05-24

申请号：US14143634

申请日：2013-12-30

申请人： Infineon Technologies AG

发明人： Guenther Ruhl ,  Florian Bachl

IPC分类号： G01N27/403

CPC分类号： G01N27/127 ,  G01N27/125 ,  G01N27/403 ,  G01N33/0027 ,  H01L51/0003 ,  H01L51/0021

摘要： A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.

摘要翻译： 流体传感器芯片包括包括无定形碳的隔离器基板，包括石墨的电导体和包括石墨烯或碳纳米管的活性材料。

公开(公告)号：US09337275B2

公开(公告)日：2016-05-10

申请号：US14166553

申请日：2014-01-28

申请人： Infineon Technologies AG

发明人： Guenther Ruhl ,  Raimund Foerg

IPC分类号： H01L21/8232 ,  H01L29/16 ,  H01L29/45 ,  H01L21/285 ,  H01L29/66

CPC分类号： H01L29/1606 ,  H01L21/043 ,  H01L21/28518 ,  H01L21/28556 ,  H01L29/45 ,  H01L29/66015

摘要： An electrical or electronic device is disclosed. In some embodiments, an electrical device includes a single-layer graphene part extending in a lateral direction and a multi-layer graphene structure laterally contacting the single-layer graphene part. The electrical or electronic device further includes a graphite part in contact with a surface of the multi-layer graphene structure. In other embodiments, an electrical device includes a graphene part extending in a lateral direction and a graphite part is configured to provide a lateral contact for the graphene part.

摘要翻译： 公开了电气或电子设备。 在一些实施例中，电气装置包括沿横向方向延伸的单层石墨烯部分和横向接触单层石墨烯部分的多层石墨烯结构。 电气或电子设备还包括与多层石墨烯结构的表面接触的石墨部分。 在其它实施例中，电气装置包括在横向方向上延伸的石墨烯部分，并且石墨部分构造成为石墨烯部分提供侧向接触。

公开(公告)号：US20160086844A1

公开(公告)日：2016-03-24

申请号：US14962393

申请日：2015-12-08

申请人： Infineon Technologies AG

发明人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC分类号： H01L21/762 ,  H01L21/321 ,  H01L21/265 ,  H01L29/20 ,  H01L21/324 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

摘要： A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

摘要翻译： 通过提供包括石墨和保护层的载体晶片来形成复合晶片，形成结合层，并通过粘合层将载体晶片接合到半导体晶片。

公开(公告)号：US20150279941A1

公开(公告)日：2015-10-01

申请号：US14719974

申请日：2015-05-22

申请人： Infineon Technologies AG

发明人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/161 ,  H01L29/04

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

摘要： A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

摘要翻译： 提供了一种复合晶片，其包括具有石墨芯和附着于载体基板的单晶半导体衬底或层的载体衬底和用于制造这种复合晶片的相应方法。

公开(公告)号：US20140209852A1

公开(公告)日：2014-07-31

申请号：US13754986

申请日：2013-01-31

申请人： INFINEON TECHNOLOGIES AG

发明人： Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/0251 ,  H01L23/367 ,  H01L23/3738 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/49562 ,  H01L23/525 ,  H01L23/62 ,  H01L24/32 ,  H01L27/24 ,  H01L27/2436 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/41725 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611 ,  H01L45/128 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/00

摘要： A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.

摘要翻译： 半导体器件包括在半导体本体中包括多个晶体管单元的晶体管，每个晶体管单元包括控制端子和第一和第二负载端子。 半导体器件还包括电连接第一负载端子的第一电连接。 半导体器件还包括电连接第二负载端子的第二电连接。 晶体管还包括在150℃和400℃之间的相变温度Tc显示出固相变化的相变材料。