SEMICONDUCTOR DEVICE
    21.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20160013119A1

    公开(公告)日:2016-01-14

    申请号:US14856524

    申请日:2015-09-16

    Applicant: ROHM CO., LTD.

    Inventor: Hiroki YAMAMOTO

    Abstract: A light-emitting element according to the present invention includes a semiconductor light-emitting element having a front surface and a rear surface so that light is extracted from the rear surface, and having a first n-side electrode and a first p-side electrode on the front surface, and a support element having a conductive substrate having a front surface and a rear surface as well as a second n-side electrode and a second p-side electrode formed on the front surface of the conductive substrate, the first n-side electrode and the second n-side electrode, and the first p-side electrode and the second p-side electrode are so bonded to one another respectively that the semiconductor light-emitting element is supported by the support element in a facedown posture downwardly directing the front surface, and the support element has an n-side external electrode and a p-side external electrode formed on the rear surface of the conductive substrate, a conductive via passing through the conductive substrate from the front surface up to the rear surface for electrically connecting the second n-side electrode and the n-side external electrode and/or the second p-side electrode and the p-side external electrode with each other, and an insulating film formed between the via and the conductive substrate to cover the side surface of the via.

    Abstract translation: 根据本发明的发光元件包括具有前表面和后表面的半导体发光元件,使得从后表面提取光,并且具有第一n侧电极和第一p侧电极 在前表面上的支撑元件和具有前表面和后表面的导电基底的支撑元件以及形成在导电基底的前表面上的第二n侧电极和第二p侧电极,第一n 侧电极和第二n侧电极以及第一p侧电极和第二p侧电极分别彼此接合,使得半导体发光元件以向下的姿势被支撑元件支撑 引导前表面,并且支撑元件具有形成在导电基板的后表面上的n侧外部电极和p侧外部电极,通过该导电基板的导电通孔 从前表面到后表面的导电基板,用于将第二n侧电极和n侧外部电极和/或第二p侧电极和p侧外部电极彼此电连接,并且绝缘 通孔和导电基板之间形成的膜以覆盖通孔的侧表面。

    BIDIRECTIONAL ZENER DIODE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20170092784A1

    公开(公告)日:2017-03-30

    申请号:US15273380

    申请日:2016-09-22

    Applicant: ROHM CO., LTD.

    Inventor: Hiroki YAMAMOTO

    Abstract: A bidirectional Zener diode includes a substrate. A first conductivity type base region is formed in a surficial portion of the substrate. A second conductivity type first impurity region is formed in a surficial portion of the base region so as to form a pn junction with the base region. A second conductivity type second impurity region is formed in a surficial portion of the base region in a manner spaced apart from the first impurity region so as to form a pn junction with the base region. A first electrode is arranged at the surface of the substrate. A second electrode is arranged at the surface of the substrate. A dimension of the base region along the surface of the substrate between the first impurity region and the second impurity region is equal to or greater than 4.0 μm and equal to or smaller than 12.5 μm.

    DISCRETE CAPACITOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20160372461A1

    公开(公告)日:2016-12-22

    申请号:US15256826

    申请日:2016-09-06

    Applicant: ROHM CO., LTD.

    Inventor: Hiroki YAMAMOTO

    CPC classification number: H01L27/0805 H01L28/60 H01L29/66181 H01L29/94

    Abstract: A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface portion of the substrate, an oxide film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer, a dielectric film formed on the impurity region having been exposed from the oxide film, and a first electrode opposed to the impurity diffusion layer with the dielectric film therebetween, wherein the impurity concentration on the front surface portion of the impurity diffusion layer is 5×1019 cm−3 or more.

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